ZMM 1...ZMM200 SILICON PLANAR ZENER DIODES LL-34 in MiniMELF case especially for automatic insertion. The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances and higher Zener voltages are upon request. These diodes are also available in DO-35 case with the type designation BZX55C... Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Power Dissipation 1) C C Valid provided that electrodes are kept at ambient temperature Characteristics at Tamb = 25oC Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 100mA 1) Symbol Min. Typ. Max. Unit RthA - - 0.31) K/mW VF - - 1 V Valid provided that electrodes are kept at ambient temperature １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ ZMM 1...ZMM200 Zener Voltage Range1) Type for VZT 2) rZJK at IZK Ω mA Reverse Leakage Current Ta =25oC Ta = 125oC μA Temp coefficient of Zener Voltage TKvz %/K -0.26...-0.23 mA V rZJT Ω μA IR at VR V ZMM 13) 0.75 5 0.7...0.8 <8 <50 1 -- -- -- ZMM 2V0 2.0 5 1.80...2.15 <85 <600 1 <100 <200 1 -0.09...-0.06 ZMM 2V2 2.2 5 2.08...2.33 <85 <600 1 <75 <160 1 -0.09...-0.06 Vznom V lZT Dynamic Resistance ZMM 2V4 2.4 5 2.28...2.56 <85 <600 1 <50 <100 1 -0.09...-0.06 ZMM 2V7 2.7 5 2.5...2.9 <85 <600 1 <10 <50 1 -0.09...-0.06 ZMM 3V0 3.0 5 2.8...3.2 <85 <600 1 <4 <40 1 -0.08...-0.05 ZMM 3V3 3.3 5 3.1...3.5 <85 <600 1 <2 <40 1 -0.08...-0.05 ZMM 3V6 3.6 5 3.4...3.8 <85 <600 1 <2 <40 1 -0.08...-0.05 ZMM 3V9 3.9 5 3.7...4.1 <85 <600 1 <2 <40 1 -0.08...-0.05 ZMM 4V3 4.3 5 4.0...4.6 <75 <600 1 <1 <20 1 -0.06...-0.03 ZMM 4V7 4.7 5 4.4...5.0 <60 <600 1 <0.5 <10 1 -0.05...+0.02 ZMM 5V1 5.1 5 4.8...5.4 <35 <550 1 <0.1 <2 1 -0.02...+0.02 ZMM 5V6 5.6 5 5.2...6.0 <25 <450 1 <0.1 <2 1 -0.05...+0.05 ZMM 6V2 6.2 5 5.8...6.6 <10 <200 1 <0.1 <2 2 0.03...0.06 ZMM 6V8 6.8 5 6.4...7.2 <8 <150 1 <0.1 <2 3 0.03...0.07 ZMM 7V5 7.5 5 7.0...7.9 <7 <50 1 <0.1 <2 5 0.03...0.07 ZMM 8V2 8.2 5 7.7...8.7 <7 <50 1 <0.1 <2 6.2 0.03...0.08 ZMM 9V1 9.1 5 8.5...9.6 <10 <50 1 <0.1 <2 6.8 0.03...0.09 ZMM 10 10 5 9.4...10.6 <15 <70 1 <0.1 <2 7.5 0.03...0.1 ZMM 11 11 5 10.4...11.6 <20 <70 1 <0.1 <2 8.2 0.03...0.11 ZMM 12 12 5 11.4...12.7 <20 <90 1 <0.1 <2 9.1 0.03...0.11 ZMM 13 13 5 12.4...14.1 <26 <110 1 <0.1 <2 10 0.03...0.11 ZMM 15 15 5 13.8...15.6 <30 <110 1 <0.1 <2 11 0.03...0.11 ZMM 16 16 5 15.3...17.1 <40 <170 1 <0.1 <2 12 0.03...0.11 ZMM 18 18 5 16.8...19.1 <50 <170 1 <0.1 <2 13 0.03...0.11 ZMM 20 20 5 18.8...21.2 <55 <220 1 <0.1 <2 15 0.03...0.11 ZMM 22 22 5 20.8...23.3 <55 <220 1 <0.1 <2 16 0.04...0.12 ZMM 24 24 5 22.8...25.6 <80 <220 1 <0.1 <2 18 0.04...0.12 ZMM 27 27 5 25.1...28.9 <80 <220 1 <0.1 <2 20 0.04...0.12 ZMM 30 30 5 28...32 <80 <220 1 <0.1 <2 22 0.04...0.12 ZMM 33 33 5 31...35 <80 <220 1 <0.1 <2 24 0.04...0.12 ZMM 36 36 5 34...38 <80 <220 1 <0.1 <2 27 0.04...0.12 ZMM 39 39 2.5 37...41 <90 <500 0.5 <0.1 <5 30 0.04...0.12 ZMM 43 43 2.5 40...46 <90 <500 0.5 <0.1 <5 33 0.04...0.12 ZMM 47 47 2.5 44...50 <110 <600 0.5 <0.1 <5 36 0.04...0.12 ZMM 51 51 2.5 48...54 <125 <700 0.5 <0.1 <10 39 0.04...0.12 ZMM 56 56 2.5 52...60 <135 <700 0.5 <0.1 <10 43 0.04...0.12 ZMM 62 62 2.5 58...66 <150 <1000 0.5 <0.1 <10 47 0.04...0.12 ZMM 68 68 2.5 64...72 <200 <1000 0.5 <0.1 <10 51 0.04...0.12 ZMM 75 75 2.5 70...79 <250 <1000 0.5 <0.1 <10 56 0.04...0.12 ZMM 82 82 2.5 77...87 <300 <1500 0.25 <0.1 <10 62 0.05...0.12 ZMM 91 91 1 85...96 <450 <2000 0.1 <0.1 <10 68 0.05...0.12 ZMM 100 100 1 94...106 <450 <5000 0.1 <0.1 <10 75 0.05...0.12 ZMM 110 110 1 104...116 <600 <5000 0.1 <0.1 <10 82 0.05...0.12 ZMM 120 120 1 114...127 <800 <5500 0.1 <0.1 <10 91 0.05...0.12 ZMM 130 130 1 124...141 <950 <6000 0.1 <0.1 <10 100 0.05...0.12 ZMM 150 150 1 138...156 <1250 <6500 0.1 <0.1 <10 110 0.05...0.12 ZMM 160 160 1 153...171 <1400 <7000 0.1 <0.1 <10 120 0.05...0.12 ZMM 180 180 1 168...191 <1700 <8500 0.1 <0.1 <10 130 0.05...0.12 ZMM 200 200 1 188...212 <2000 <10000 0.1 <0.1 <10 150 0.05...0.12 1) Tested with pulses tp = 20 ms. 2) Valid provided that electrodes are kept at ambient temperature 3) The ZMM1 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be “F” instead of “Z”. Connect the cathode electrode to the negative pole. ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ ZMM 1...ZMM200 Breakdown characteristics Tj = constant (pulsed) mA 50 ZMM... Tj=25o C ZMM 1 Iz ZMM 3.9 ZMM 2.7 ZMM 3.3 ZMM 6.8 ZMM 4.7 40 ZMM 8.2 ZMM 5.6 30 20 Test current Iz 5mA 10 0 0 1 2 3 5 4 7 6 8 10 V 9 Vz Breakdown characteristics Tj = constant (pulsed) ZMM... mA 30 Tj=25o C ZMM 10 ZMM 12 Iz ZMM 15 20 ZMM 18 ZMM 22 ZMM 27 Test current Iz 5mA 10 ZMM 33 ZMM 36 0 0 10 20 30 40 V Vz ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ ZMM 1...ZMM200 Breakdown characteristics Tj = constant (pulsed) ZMM... mA 10 Iz Tj=25o C ZMM 39 ZMM 51 ZMM 43 ZMM 47 8 Test current Iz 5mA 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 V Vz Admissible power dissipation versus ambient temperature Forward characteristics Valid provided that electrodes are kept at ambient temperature. mA 10 ZMM... mW 500 ZMM... 3 10 2 iF P tot 400 10 o Tj=100 C 1 300 o Tj=25 C 10 10 10 -1 200 -2 -3 100 10 -4 10 -5 0 0 0.2 0.4 0.6 0.8 1V VF 0 200o C 100 Tamb ４ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ ZMM 1...ZMM200 Pulse thermal resistance versus pulse duration Dynamic resistance versus Zener current Valid provided that the electrodes are kept at ambient temperature. K/W ZMM... ZMM... 3 10 1000 o Tj =25 C 7 5 5 4 r thA 4 r zj 3 3 2 2 10 0.5 2 7 100 0.2 5 5 4 4 0.1 3 3 0.05 2 2 0.02 10 0.01 10 2.7 ZMM1 V=0 7 3.6 4.7 5 5 4 4 tp tp 3 V= 3 PI T 5.1 2 2 T 10 -5 10 -4 10 -3 10 -2 10 tp ZMM5.6 1 1 -1 0.1 10 S 1 2 5 1 2 5 10 2 100mA 5 Iz Dynamic resistance versus Zener current Capacitance versus Zener voltage ZMM... pF 1000 100 ZMM... o Tj =25 C o Tj =25 C 7 5 r zj 5 Ctot 4 3 4 33 VR =1V 3 2 27 22 VR =2V 2 10 18 100 7 5 15 5 4 VR =1V 12 VR =2V 3 4 10 3 2 6.8/8.2 2 ZMM6.2 1 0.1 10 1 2 3 4 5 10 2 3 4 5 2 5 1 2 5 10 2 5 100mA 100V Vz at Iz=5 mA Iz ５ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ ZMM 1...ZMM200 Thermal differential resistance versus Zener voltage Dynamic resistance versus Zener current 10 Valid provided that electrodes are kept at ambient temperature ZMM... 3 10 o Tj =25 C ZMM... 3 r zth =RthA.Vz. 7 5 4 5 Vz Tj 3 4 r zj 2 3 10 2 10 2 r zth 5 4 2 3 2 7 47+51 43 39 5 10 4 ZMM36 5 4 3 3 negative 2 positive 2 10 1 2 0.1 3 4 5 2 1 3 4 5 10mA 2 1 3 4 5 2 10 Iz 3 4 5 100V Vz at Iz=5 mA Dynamic resistance versus Zener voltage Temperature dependence of Zener voltage versus Zener voltage mV/K 25 ZMM... 100 ZMM... 7 5 r zj Vz Tj 4 20 5mA Iz=1mA 20mA 3 15 2 10 10 7 5 5 4 3 0 2 o Tj =25 C Iz=5 mA 1 1 2 3 4 5 10 2 3 4 5 100V Vz at Iz=5 mA -5 1 2 3 4 5 10 2 3 4 5 100V Vz at Iz=5 mA ６ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ ZMM 1...ZMM200 Temperature dependence of Zener voltage versus Zener voltage mV/K Change of Zener voltage versus junction temperature V ZMM... ZMM... 9 100 Iz=5 mA 8 Vz bei Iz=5mA 7 80 Vz Tj 51V Vz 6 43V 5 60 36V 4 40 3 2 1 20 0 Iz=5 mA -1 0 0 20 60 40 80 0 100V 20 40 60 80 100 Vz at Iz=5 mA Tj Change of Zener voltge from turn-on up to the point of thermal equilibrium versus Zener voltage Change of Zener voltage versus junction temperature V ZMM... V 1.6 0.8 X) 25 Vz=35 V 0.7 o 140 C 120 15 1.4 10 0.6 ZMM... Vz=rzth .Iz Iz=5 mA 1.2 Vz Vz 0.5 1 8 0.4 0.8 7 0.3 6.2 0.2 5.9 0.1 0 5.1 -0.1 X) at Iz=5 mA -0.2 0 20 40 60 80 1 -0.2 4.7 3.6 100 120 0.4 0.2 5.6 0 0.6 o 140 C -0.4 1 2 3 4 5 10 2 3 4 5 100V Tj Vz at Iz=5 mA ７ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ ZMM 1...ZMM200 Change of Zener voltge from turn-on up to the point of thermal equilibrium versus Zener voltage V ZMM... 5 Vz=rzth .Iz 4 Vz 3 Iz=5 mA 2 1 Iz=2 mA 0 0 20 40 60 80 100V Vz at Iz=5 mA ８ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５