DIODES ZRT050GC2

ZRT050
4.9V LOW POWER PRECISION REFERENCE SOURCE
DESCRIPTION
The ZRT050 is a monolithic integrated circuit providing
a precise stable reference voltage of 4.9V at 500µA.
The circuit features a knee current of 150µA and
operation over a wide range of temperatures and
currents.
The ZRT050 is available in a SOT223 package for
surface mount applications. This device offers a trim
facility whereby the output voltage can be adjusted as
s h o w n i n Fi g. 1 . Thi s f a c i l i t y i s use d w h e n
compensating for system errors or setting the
reference output to a particular value. When the trim
facility is not used, the pin should be left open circuit.
SOT223
FEATURES
• Trimmable output
• Excellent temperature stability
• Low output noise figure
• Available in two temperature ranges
• 1 and 2% initial voltage tolerance versions
available
• No external stabilizing capacitor required in most
cases
• Low slope resistance
SOT223
Package suffix G
• SOT223 small outline package
Top view (pin 4 floating or
connected to pin 2)
ORDERING INFORMATION
DEVICE
TOL%
OPERATING
TEMP.
PACKAGE
PARTMARK
ZRT050GC2
2
-40 to 85°C
SOT223
ZRT050C2
ZRT050GC1
1
-40 to 85°C
SOT223
ZRT050C1
ZRT050GA1
1
-55 to 125°C
SOT223
ZRT050A1
A grade
C grade
-55°C to 125°C
-40°C to 85°C
ISSUE 3 - DECEMBER 2003
1
SEMICONDUCTORS
ZRT050
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
60
mA
A grade
-55 to 125
°C
C grade
-40 to 85
°C
-55 to 150
°C
Reverse current
(1)
Operating temperature:
T OMP
Storage temperature
(1)
T STG
Above 25°C this figure should be linearly derated to 12mA at 125°C
POWER DISSIPATION (at Tamb = 25°C unless otherwise stated)
PACKAGE
VALUE
SOT223
2
UNIT
W
TEMPERATURE DEPENDENT ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
INITIAL
VOLTAGE
TOLERANCE %
GRADE A
GRADE C
TYP
MAX
TYP
MAX
UNIT
∆V R
Output voltage change over
relevant temperature
range(See note (a))
1&2
13.5
45.0
5.4
17.2
mV
TCVR
Output voltage temperature
coefficient (See note (b))
1&2
15.0
50.0
15.0
50.0
ppm/°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
SYMBOL
PARAMETER
VR
Output voltage
1% tolerance (A1,C1)
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I R =500␮A
4.85
4.90
4.95
V
4.80
4.90
5.00
2% tolerance (C2)
⌬V TRIM
Output voltage adjustment range
T C ⌬V TRIM
Change in T C V R with output adjustment
IR
Operating current range
t on
t off
Turn-on time
Turn-off time
e np-p
RS
⫾5
R T =100k⍀
2.5
See note (c)
0.15
V
%
ppm/°C/%
60
mA
R L =1k⍀
100
0.3
␮s
␮s
Output voltage noise
(over the range 0.1 to 10Hz)
Peak to peak
measurement
50
␮V
Slope resistance
I R = 0.5mA to
5mA
See note (d)
1.25
2.0
⍀
ISSUE 3 - DECEMBER 2003
SEMICONDUCTORS
2
ZRT050
TYPICAL CHARACTERISTICS
NOTES:
(a) Output change with temperature
(d) Slope resistance (RS)
The absolute maximum difference between the
maximum output voltage and the minimum output
voltage over the specified temperature range:
The slope resistance is defined as:
RS =
⌬VR=Vmax-Vmin
change in V R
specific current range
⌬I=5-0.5=4.5mA (typically)
(b) Output temperature coefficient (TCVR)
(e) Line regulation
The ratio of the output change with temperature to the
specified temperature range expressed in ppm/°C:
The ratio of change in output voltage to the change in
input voltage producing it:
∆V R x 10 6
TCV R =
ppm °C
V R x∆T
RS x 100
%/V
V R xR SOURCE
⌬T= Full temperature range
(c) Operating current (IR)
Maximum operating current must be derated as
indicated in maximum ratings.
ISSUE 3 - DECEMBER 2003
3
SEMICONDUCTORS
ZRT050
SCHEMATIC DIAGRAM
Figure 1:
This circuit will allow the reference to be trimmed over
a wide range. The device is specified over a ⫾5% trim
range.
ISSUE 3 - DECEMBER 2003
SEMICONDUCTORS
4
ZRT050
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
–
1.80
–
0.071
e
2.30 BSC
0.0905 BSC
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
b2
2.90
3.10
0.114
0.122
E1
3.30
C
0.23
0.33
0.009
0.013
L
0.90
D
6.30
6.70
0.248
0.264
–
0.264
0.287
3.70
0.130
0.146
–
0.0355
–
–
–
–
© Zetex plc 2003
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ISSUE 3 - DECEMBER 2003
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SEMICONDUCTORS