SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4210G ISSUE 2 - NOVEMBER 1995 FEATURES * Low RDS(on) = 1.5Ω PARTMARKING DETAIL - ZVN4210 VGS= 10V 9V 8V 7V ID - Drain Current (Amps) 5 4 3 6V 5V 2 4V 3.5V 3V 2.5V 2V 10 1 0 0 1 2 3 4 5 6 7 8 9 VDS - Drain Source Voltage (Volts) RDS(on)-Drain Source On Resistance (Ω) TYPICAL CHARACTERISTICS 100 D G 10 ABSOLUTE MAXIMUM RATINGS. 1 0.1 ID-Drain Current (Amps) 900 n) (o DS 2.2 2.0 1.8 Re 1.6 t sis ce an R VGS=10V ID=1.5A ce ur So ni a VGS=VDS Dr Gate ID=1mA Thres hold V oltage V 1.4 1.2 1.0 0.8 GS(TH ) -50 -25 0 25 50 75 100 125 150 175 200 225 gfs-Transconductance (mS) Normalised RDS(on) and VGS(th) 1000 2.4 700 VDS=10V 600 500 400 300 200 100 0 0 120 80 Ciss 40 40 60 80 VDS-Drain Source Voltage (Volts) Capacitance v drain-source voltage Coss Crss 100 VGS-Gate Source Voltage (Volts) C-Capacitance (pF) 160 20 4 5 Transconductance v drain current SYMBOL VALUE UNIT Drain-Source Voltage V DS 100 V Continuous Drain Current at T amb=25°C ID 0.8 A Pulsed Drain Current I DM 6 A Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 2 W Operating and Storage Temperature Range T j:T stg -55 to +150 °C 14 ID=1.5A 12 10 8 6 4 2 0 0 1 2 3 4 PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 100 Gate-Source Threshold Voltage V GS(th) 0.8 5 Q-Charge (nC) Gate charge v gate-source voltage 6 MAX. UNIT CONDITIONS. V I D=1mA, V GS=0V 2.4 V I D =1mA, V DS= V GS Gate-Body Leakage I GSS 100 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 10 100 µA µA V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125°C (2) A V DS=25V, V GS=10V Ω Ω V GS=10V,I D=1.5A V GS=5V,I D=500mA mS V DS=25V,I D=1.5A On-State Drain Current(1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance(1)(2) g fs VDD= 20V 50V 80V 16 200 0 3 2 1 ID(on)- Drain Current (Amps) Normalised RDS(on) and VGS(th) v Temperature PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 800 Tj-Junction Temperature (°C) 0 10 1.0 On-resistance v drain current 2.6 D S Saturation Characteristics 0.6 5V 6V 8V 10V VGS=3V 3.5V ZVN4210G 2.5 1.5 1.8 250 Input Capacitance (2) C iss 100 pF Common Source Output Capacitance (2) C oss 40 pF Reverse Transfer Capacitance (2) Crss 12 pF Turn-On Delay Time (2)(3) t d(on) 4 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) t d(off) 20 ns Fall Time (2)(3) tf 30 ns V DS=25V, V GS=0V, f=1MHz V DD≈25V, I D=1.5A (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device ZVN4210G DRAIN-SOURCE DIODE CHARACTERISTICS PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS. Diode Forward Voltage (1) V SD - 0.79 0.89 - Reverse Recovery Time (to IR=10%) T RR - 135 V V I S=0.32A, V GS=0V I S=1.0A, V GS=0V ns I F=0.45A, V GS=0V, I R=100mA, V R=10V (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4210G ISSUE 2 - NOVEMBER 1995 FEATURES * Low RDS(on) = 1.5Ω PARTMARKING DETAIL - ZVN4210 VGS= 10V 9V 8V 7V ID - Drain Current (Amps) 5 4 3 6V 5V 2 4V 3.5V 3V 2.5V 2V 10 1 0 0 1 2 3 4 5 6 7 8 9 VDS - Drain Source Voltage (Volts) RDS(on)-Drain Source On Resistance (Ω) TYPICAL CHARACTERISTICS 100 D G 10 ABSOLUTE MAXIMUM RATINGS. 1 0.1 ID-Drain Current (Amps) 900 n) (o DS 2.2 2.0 1.8 Re 1.6 t sis ce an R VGS=10V ID=1.5A ce ur So ni a VGS=VDS Dr Gate ID=1mA Thres hold V oltage V 1.4 1.2 1.0 0.8 GS(TH ) -50 -25 0 25 50 75 100 125 150 175 200 225 gfs-Transconductance (mS) Normalised RDS(on) and VGS(th) 1000 2.4 700 VDS=10V 600 500 400 300 200 100 0 0 120 80 Ciss 40 40 60 80 VDS-Drain Source Voltage (Volts) Capacitance v drain-source voltage Coss Crss 100 VGS-Gate Source Voltage (Volts) C-Capacitance (pF) 160 20 4 5 Transconductance v drain current SYMBOL VALUE UNIT Drain-Source Voltage V DS 100 V Continuous Drain Current at T amb=25°C ID 0.8 A Pulsed Drain Current I DM 6 A Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 2 W Operating and Storage Temperature Range T j:T stg -55 to +150 °C 14 ID=1.5A 12 10 8 6 4 2 0 0 1 2 3 4 PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 100 Gate-Source Threshold Voltage V GS(th) 0.8 5 Q-Charge (nC) Gate charge v gate-source voltage 6 MAX. UNIT CONDITIONS. V I D=1mA, V GS=0V 2.4 V I D =1mA, V DS= V GS Gate-Body Leakage I GSS 100 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 10 100 µA µA V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125°C (2) A V DS=25V, V GS=10V Ω Ω V GS=10V,I D=1.5A V GS=5V,I D=500mA mS V DS=25V,I D=1.5A On-State Drain Current(1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance(1)(2) g fs VDD= 20V 50V 80V 16 200 0 3 2 1 ID(on)- Drain Current (Amps) Normalised RDS(on) and VGS(th) v Temperature PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 800 Tj-Junction Temperature (°C) 0 10 1.0 On-resistance v drain current 2.6 D S Saturation Characteristics 0.6 5V 6V 8V 10V VGS=3V 3.5V ZVN4210G 2.5 1.5 1.8 250 Input Capacitance (2) C iss 100 pF Common Source Output Capacitance (2) C oss 40 pF Reverse Transfer Capacitance (2) Crss 12 pF Turn-On Delay Time (2)(3) t d(on) 4 ns Rise Time (2)(3) tr 8 ns Turn-Off Delay Time (2)(3) t d(off) 20 ns Fall Time (2)(3) tf 30 ns V DS=25V, V GS=0V, f=1MHz V DD≈25V, I D=1.5A (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device