N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4310A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on) = 0.5Ω * Spice model available ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT Input Capacitance (2) C iss TYP. 350 pF Common Source Output Capacitance (2) C oss 140 pF Reverse Transfer Capacitance (2) C rss 30 pF Turn-On Delay Time (2)(3) t d(on) 8 ns Rise Time (2)(3) tr 25 ns Turn-Off Delay Time (2)(3) t d(off) 30 ns Fall Time (2)(3) tf 16 ns CONDITIONS. ABSOLUTE MAXIMUM RATINGS. PARAMETER Thermal Resistance (°C/W) 1.0 0.75 Am tt en bi em pe tu ra re Max Power Dissipation - (Watts) Thermal Resistance:Junction to Ambient Junction to Case -40 -20 0 20 40 S E-Line TO92 Compatible V DD ≈25V, V GEN=10V, I D=3A R GS=50Ω THERMAL CHARACTERISTICS 0.25 D G V DS=25 V, V GS=0V, f=1MHz (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 0.50 ZVN4310A 60 80 100 120 140 160 180 200 SYMBOL VALUE UNIT Drain-Source Voltage V DS 100 V Continuous Drain Current at T amb=25°C ID 0.9 A Practical Continuous Drain Current at T amb=25°C I DP 1 A Pulsed Drain Current I DM 12 A Gate Source Voltage V GS ± 20 V mW Power Dissipation at T amb=25°C P tot 850 Practical Power Dissipation at T amb=25°C* P totp 1.13 W Operating and Storage Temperature Range T j :T stg -55 to +150 °C SYMBOL MAX. UNIT *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). t1 100 PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 100 Gate-Source Threshold Voltage V GS(th) 1 Gate-Body Leakage TYP. MAX. UNIT CONDITIONS. V I D=1mA, V GS=0V 3 V ID=1mA, V DS= V GS I GSS 20 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 10 100 µA µA V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) A V DS=25 V, V GS=10V Static Drain-Source On-State Resistance (1) R DS(on) Ω Ω V GS=10V,I D=3A V GS=5V, I D=1.5A Forward Transconductance (1)(2) g fs mS V DS=25V,I D=3A D.C. 150 D=t1/tP tP D=0.6 50 D=0.2 D=0.1 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-394 PARAMETER 9 0.36 0.48 600 3-393 0.5 0.65 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4310A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on) = 0.5Ω * Spice model available ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT Input Capacitance (2) C iss TYP. 350 pF Common Source Output Capacitance (2) C oss 140 pF Reverse Transfer Capacitance (2) C rss 30 pF Turn-On Delay Time (2)(3) t d(on) 8 ns Rise Time (2)(3) tr 25 ns Turn-Off Delay Time (2)(3) t d(off) 30 ns Fall Time (2)(3) tf 16 ns CONDITIONS. ABSOLUTE MAXIMUM RATINGS. PARAMETER Thermal Resistance (°C/W) 1.0 0.75 Am tt en bi em pe tu ra re Max Power Dissipation - (Watts) Thermal Resistance:Junction to Ambient Junction to Case -40 -20 0 20 40 S E-Line TO92 Compatible V DD ≈25V, V GEN=10V, I D=3A R GS=50Ω THERMAL CHARACTERISTICS 0.25 D G V DS=25 V, V GS=0V, f=1MHz (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 0.50 ZVN4310A 60 80 100 120 140 160 180 200 SYMBOL VALUE UNIT Drain-Source Voltage V DS 100 V Continuous Drain Current at T amb=25°C ID 0.9 A Practical Continuous Drain Current at T amb=25°C I DP 1 A Pulsed Drain Current I DM 12 A Gate Source Voltage V GS ± 20 V mW Power Dissipation at T amb=25°C P tot 850 Practical Power Dissipation at T amb=25°C* P totp 1.13 W Operating and Storage Temperature Range T j :T stg -55 to +150 °C SYMBOL MAX. UNIT *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). t1 100 PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 100 Gate-Source Threshold Voltage V GS(th) 1 Gate-Body Leakage TYP. MAX. UNIT CONDITIONS. V I D=1mA, V GS=0V 3 V ID=1mA, V DS= V GS I GSS 20 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 10 100 µA µA V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) A V DS=25 V, V GS=10V Static Drain-Source On-State Resistance (1) R DS(on) Ω Ω V GS=10V,I D=3A V GS=5V, I D=1.5A Forward Transconductance (1)(2) g fs mS V DS=25V,I D=3A D.C. 150 D=t1/tP tP D=0.6 50 D=0.2 D=0.1 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-394 PARAMETER 9 0.36 0.48 600 3-393 0.5 0.65 ZVN4310A VGS= 20V 10V 12V 9V 8V ID - Drain Current (Amps) 10 9 RDS(on)-Drain Source On Resistance (Ω) TYPICAL CHARACTERISTICS 7V 8 7 6V 6 5 5V 4 3 2 4V 1 3V 0 0 1 2 3 4 5 6 7 8 9 10 VDS - Drain Source Voltage (Volts) Saturation Characteristics 4V VGS=3V 5V 6V 8V10V 10 1.0 0.1 0.1 1 100 10 ID-Drain Current (Amps) On-resistance v drain current 5 2.4 n) (o DS 2.2 2.0 e nc ta 1.8 VGS=10V ID=3.3A sis Re ce r u So nai VGS=VDS Dr Gate ID=1mA Thres hold V oltage V 1.6 1.4 1.2 1.0 0.8 0.6 R gfs-Transconductance (S) Normalised RDS(on) and VGS(th) 2.6 GS(TH ) -50 -25 0 4 VDS=10V 3 2 1 0 25 50 75 100 125 150 175 200 225 0 2 6 4 8 10 12 14 Tj-Junction Temperature (°C) 300 Ciss 100 10 20 30 40 Coss Crss 50 VGS-Gate Source Voltage (Volts) C-Capacitance (pF) 400 0 20 VDD= 10V 20V 50V 100V 16 500 0 18 Transconductance v drain current Normalised RDS(on) and VGS(th) v Temperature 200 16 ID(on)- Drain Current (Amps) VDS-Drain Source Voltage (Volts) 14 ID=3A 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3-395