ZX5T955Z. 140V PNP Low saturation medium power transistor in SOT89 Summary BVCEO = -140V : RSAT = 85m⍀; IC = -3A Description Packaged in the SOT89 outline this new 5th generation low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. Features • 3 amps continuous current • Up to 10 amps peak current • Very low saturation voltages Applications C • Motor driving • Line switching • High side switches • Subscriber line interface cards (SLIC) B E Ordering Information Device ZX5T955TA Reel Size Tape Width Quantity Per Reel 7” 12mm 1000 Device Marking E 955 C C B Pinout - top view Issue 2 - June 2008 © Zetex Semiconductors Ltd 2008 1 www.zetex.com ZX5T955Z. Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage BVCBO -180 V Collector-emitter voltage BVCEO -140 V Emitter-base voltage BVEBO -7 V IC -3 A Peak pulse current ICM -10 A Power dissipation at Tamb=25°C(a) Linear derating factor PD 1.5 12 W mW/oC Power dissipation at Tamb=25°C(b) Linear derating factor PD 2.1 16.8 W mW°C Tj, Tstg -55 to 150 °C Symbol Limit Unit Junction to ambient(a) R⍜JA 83 °C/W Junction to ambient(b) R⍜JA 60 °C/W Continuous collector current(a) Operating and storage temperature range Thermal resistance Parameter (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 2 - June 2008 © Zetex Semiconductors Ltd 2008 2 www.zetex.com ZX5T955Z. Characteristics Issue 2 - June 2008 © Zetex Semiconductors Ltd 2008 3 www.zetex.com ZX5T955Z. Electrical Characteristics (at Tamb =25oC unless otherwise stated) Parameter Symbol Min. Typ. Collector-Base breakdown voltage BVCBO -180 -200 V IC = -100A Collector-Emitter breakdown BVCER voltage -180 -200 V IC = -100A, RB<1k⍀ Collector-Emitter breakdown BVCEO voltage -140 -160 V IC = -10mA (*) Emitter-Base breakdown voltage BVEBO -7.0 -8.0 V IE = -100A Collector cut-off current ICBO -20 -0.5 nA A VCB = -150V -20 -0.5 nA A VCB = -150V VCB = -150V, Tamb =100oC Collector cut-off current <1 Max. Unit Conditions VCB = -150V, Tamb =100oC ICER R<1k⍀ <1 Emitter cut-off current IEBO <1 -10 nA VEB = -6V Collector-Emitter saturation voltage VCE(sat) -37 -60 mV IC = -0.1A, IB = -5mA(*) -50 -75 mV IC = -0.5A, IB = -50mA(*) -80 -115 mV IC = -1A, IB = -100mA(*) -255 -330 mV IC = -3A, IB = -300mA(*) VBE(sat) -910 -1010 mV IC = -3A, IB = -300mA(*) Base-emitter turn-on voltage VBE(on) -800 -900 mV IC = -3A, VCE = -5V(*) Base-emitter saturation voltage Static forward current transfer ratio hFE 100 225 100 200 45 100 IC = -3A, VCE = -5V(*) 5 IC = -10A, VCE = -5V(*) IC = -10mA, VCE = -5V(*) 300 IC = -1A, VCE = -5V(*) Transition frequency fT 120 MHz IC = -100mA, VCE = -10V f = 50MHz Output capacitance COBO 33 pF VCB = -10V, f = 1MHz(*) Switching times ton 42 ns IC = -1A, VCC = -50V, toff 636 ns IB1 = -IB2 = -100mA NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%. Issue 2 - June 2008 © Zetex Semiconductors Ltd 2008 4 www.zetex.com ZX5T955Z. Typical characteristics Issue 2 - June 2008 © Zetex Semiconductors Ltd 2008 5 www.zetex.com ZX5T955Z. Package Outline D A C D1 E H E1 L B e B1 DIM A b b1 b2 c D Millimeters Min Max 1.40 1.60 0.38 0.48 0.53 1.50 1.80 0.28 0.44 4.40 4.60 Issue 2 - June 2008 © Zetex Semiconductors Ltd 2008 e1 Inches DIM Min Max 0.550 0.630 e 0.015 0.019 E 0.021 E1 0.060 0.071 G 0.011 0.017 H 0.173 0.181 - 6 Millimeters Min Max 1.40 1.50 3.75 4.25 2.60 2.90 3.00 2.60 2.85 - Inches Min Max 0.055 0.059 0.150 0.167 0.102 0.114 0.118 0.102 0.112 - www.zetex.com Intentionally left blank Issue 2 - June 2008 © Zetex Semiconductors Ltd 2008 7 www.zetex.com ZX5T955Z. Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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