DIODES ZXMP10A17G

A Product Line of
Diodes Incorporated
ZXMP10A17G
100V P-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCE INFORMATION
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Product Summary
V(BR)DSS
Features and Benefits
ID
RDS(on)
TA = 25°C
350mΩ @ VGS= -10V
-2.4
450mΩ @ VGS= -6.0V
-2.1
-100V
•
Fast switching speed
•
Low gate drive
•
Low input capacitance
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
•
Motor control
•
DC-DC Converters
•
Power management functions
•
Uninterrupted power supply
•
Case: SOT223
•
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.112 grams (approximate)
SOT223
D
G
S
Pin Out - Top View
Top View
Equivalent Circuit
Ordering Information
Product
ZXMP10A17GTA
Marking
See below
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
Marking Information
ZXMP
10A17
ZXMP10A17G
Document Number DS32022 Rev. 2 - 2
ZXMP = Product Type Marking Code, Line 1
10A17 = Product Type Marking Code, Line 2
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ADVANCE INFORMATION
ZXMP10A17G
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGS
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
VGS = 10V
Pulsed Drain current
VGS= 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 2)
TA = 70°C (Note 2)
(Note 1)
(Note 3)
(Note 2)
(Note3 )
ID
IDM
IS
ISM
Value
-100
±20
-2.4
-1.9
-1.7
-9.4
-4.5
-9.4
Unit
V
V
Value
2.0
16
3.9
31
62.5
32.0
9.8
-55 to 150
Unit
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
Symbol
(Note 1)
PD
(Note 2)
(Note 1)
(Note 2)
(Note 4)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
1. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
2. Same as note (1), except the device is measured at t ≤ 10 sec.
3. Same as note (1), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
4. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMP10A17G
Document Number DS32022 Rev. 2 - 2
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-ID Drain Current (A)
10 RDS(on)
Limited
1
DC
1s
100ms
100m
10ms
Single Pulse
T amb=25°C
10m
1
1ms
100µs
10
100
Max Power Dissipation (W)
Thermal Characteristics
2.0
1.6
1.2
0.8
0.4
0.0
0
20
-VDS Drain-Source Voltage (V)
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
Safe Operating Area
70
Tamb=25°C
60
Maximum Power (W)
Thermal Resistance (°C/W)
ADVANCE INFORMATION
ZXMP10A17G
50
40
D=0.5
30
20
Single Pulse
D=0.2
D=0.05
10
Single Pulse
T amb=25°C
100
10
D=0.1
0
100µ
1m
10m 100m
1
10
100
1k
1
100µ
Pulse Width (s)
Document Number DS32022 Rev. 2 - 2
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
ZXMP10A17G
1m
Pulse Power Dissipation
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ADVANCE INFORMATION
ZXMP10A17G
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
-100
⎯
⎯
V
ID = -250μA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
-0.5
μA
VDS = -100V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS = ±20V, VDS = 0V
VGS(th)
-2.0
⎯
-4.0
V
ID = -250μA, VDS = VGS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS = -10V, ID = -1.4A
RDS (ON)
⎯
Forward Transconductance (Notes 5 & 6)
gfs
⎯
2.8
⎯
S
VDS = -15V, ID = -1.4A
Diode Forward Voltage (Note 5)
VSD
⎯
-0.85
-0.95
V
IS = -1.7A, VGS = 0V
Reverse recovery time (Note 6)
trr
33
⎯
ns
Reverse recovery charge (Note 6)
Qrr
⎯
48
⎯
nC
Input Capacitance
Ciss
⎯
424
⎯
pF
Output Capacitance
Coss
⎯
36.6
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
29.8
⎯
pF
Total Gate Charge (Note 7)
Qg
⎯
7.1
⎯
nC
Total Gate Charge (Note 7)
Qg
⎯
10.7
⎯
nC
Gate-Source Charge (Note 7)
Qgs
⎯
1.7
⎯
nC
Gate-Drain Charge (Note 7)
Qgd
⎯
3.8
⎯
nC
Turn-On Delay Time (Note 7)
tD(on)
⎯
3.0
⎯
ns
Turn-On Rise Time (Note 7)
tr
⎯
3.5
⎯
ns
Turn-Off Delay Time (Note 7)
tD(off)
⎯
13.4
⎯
ns
tf
⎯
7.2
⎯
ns
Static Drain-Source On-Resistance (Note 5)
⎯
0.350
0.450
Ω
VGS = -6V, ID = -1.2A
IS = -1.5A, di/dt = 100A/μs
DYNAMIC CHARACTERISTICS (Note 6)
Turn-Off Fall Time (Note 7)
Notes:
VDS = -50V, VGS = 0V
f = 1MHz
VGS = -6.0V
VGS = -10V
VDS = -50V
ID = -1.4A
VDD = -50V, VGS = -10V
ID = -1A, RG ≅ 6.0Ω
5. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
6. For design aid only, not subject to production testing.
7. Switching characteristics are independent of operating junction temperatures.
ZXMP10A17G
Document Number DS32022 Rev. 2 - 2
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10
10V
T = 25°C
7V
10
-ID Drain Current (A)
-ID Drain Current (A)
Typical Characteristics
5V
1
4.5V
4V
0.1
10V
T = 150°C
7V
5V
4.5V
4V
1
3.5V
0.1
3V
0.01
-VGS
0.01
-VGS
1E-3
0.1
1
10
0.1
1
10
-VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
T = 150°C
T = 25°C
0.1
-VDS = 10V
0.01
3
4
5
VGS = -10V
1.8
ID = - 1.4A
1.6
RDS(on)
1.4
1.2
1.0
VGS(th)
0.8
VGS = VDS
0.6
ID = -250uA
-50
0
50
100
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
100
-VGS
4V
T = 25°C
4.5V
10
5V
1
7V
10V
0.01
0.1
1
10
-ID Drain Current (A)
On-Resistance v Drain Current
ZXMP10A17G
Document Number DS32022 Rev. 2 - 2
-ISD Reverse Drain Current (A)
-ID Drain Current (A)
1
Normalised RDS(on) and VGS(th)
2.0
RDS(on) Drain-Source On-Resistance (Ω)
ADVANCE INFORMATION
ZXMP10A17G
150
10
T = 150°C
1
T = 25°C
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
-VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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Typical Characteristics - continued
VGS = 0V
f = 1MHz
500
CISS
400
300
COSS
200
100
CRSS
0
0.1
1
10
100
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
-VGS Gate-Source Voltage (V)
10
600
C Capacitance (pF)
ADVANCE INFORMATION
ZXMP10A17G
8
6
4
VDS = -50V
2
ID = -1.4A
0
0
2
4
6
8
10
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
QG
12V
VG
QGS
50k
0.2␮F
Same as
D.U.T
QGD
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
tr
td(of )
t(on)
tr
td(on)
t(on)
Switching time waveforms
ZXMP10A17G
Document Number DS32022 Rev. 2 - 2
Pulse width ⬍ 1␮S
Duty factor 0.1%
Switching time test circuit
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ADVANCE INFORMATION
ZXMP10A17G
Package Outline Dimensions
DIM
A
A1
A2
b
b2
C
Millimeters
Min
Max
1.80
0.02
0.10
1.55
1.65
0.66
0.84
2.90
3.10
0.23
0.33
Inches
Min
Max
0.071
0.0008
0.004
0.0610
0.0649
0.026
0.033
0.114
0.122
0.009
0.013
DIM
D
e
e1
E
E1
L
Millimeters
Min
Max
6.30
6.70
2.30 BSC
4.60 BSC
6.70
7.30
3.30
3.70
0.90
-
Inches
Min
Max
0.248
0.264
0.0905 BSC
0.181 BSC
0.264
0.287
0.130
0.146
0.355
-
Suggested Pad Layout
3.8
0.15
2.0
0.079
6.3
0.248
2.0
0.079
1.5
0.059
ZXMP10A17G
Document Number DS32022 Rev. 2 - 2
2.3
0.091
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mm
inches
November 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ADVANCE INFORMATION
ZXMP10A17G
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
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ZXMP10A17G
Document Number DS32022 Rev. 2 - 2
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