ZXT1053AK 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = 75V : RSAT = 70m typical; IC = 5A DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES DPAK • 5 amps continuous current • Up to 10 amps peak current • Low equivalent on resistance • Low saturation voltages • High hFE (300 min @ 1A) APPLICATIONS • DC - DC converters • DC - DC modules • Power switches • Motor control • Automotive circuits • Inverter circuits PINOUT ORDERING INFORMATION DEVICE ZXT1053AKTC REEL SIZE TAPE WIDTH QUANTITY PER REEL 13” 16mm 2500 units DEVICE MARKING TOP VIEW • ZXT1053A ISSUE 2 - DECEMBER 2003 1 SEMICONDUCTORS ZXT1053AK ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT V Collector-base voltage BV CBO 150 Collector-emitter voltage BV CEO 75 V Emitter-base voltage BV EBO 7 V Continuous collector current (b) IC 5 A Peak pulse current I CM 10 A Power dissipation at T A =25°C (a) PD 2.1 W Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor 16.8 mW/°C PD Power dissipation at T A =25°C (c) Linear derating factor PD Operating and storage temperature range T j , T stg 3.4 W 27.4 mW/°C 4.4 W 9.3 mW/°C -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL Junction to ambient (a) Junction to ambient (b) Junction to ambient (c) VALUE UNIT R ⍜JA 59 °C/W R ⍜JA 36 °C/W R ⍜JA 28 °C/W NOTES (a) (For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions. (c) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper in still air conditions. ISSUE 2 - DECEMBER 2003 SEMICONDUCTORS 2 ZXT1053AK TYPICAL CHARACTERISTICS ISSUE 2 - DECEMBER 2003 3 SEMICONDUCTORS ZXT1053AK ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-base breakdown voltage BV CBO 150 240 MAX. UNIT CONDITIONS V I C =100A Collector-emitter breakdown voltage BV CES 150 240 V I C =100A Collector-emitter breakdown voltage BV CEO 75 90 V I C =10mA* Collector-emitter breakdown voltage BV CEV 150 240 V Emitter-base breakdown voltage BV EBO 7 8.7 I C =1A, V EB =1V I E =100A Collector cut-off current I CBO ⬍1 10 nA V CB =120V V Collector cut-off current I CES ⬍1 10 nA V CES =120V Emitter cut-off current I EBO ⬍1 10 nA V EB =6V Collector-emitter saturation voltage V CE(SAT) 19 30 mV I C =0.2A, I B =20mA* 70 95 mV IC=1A, IB=100mA* 120 160 mV IC=1A, IB=10mA* 140 190 mV IC=2A, IB=100mA* IC=5A, IB=200mA* 350 460 mV Base-emitter saturation voltage V BE(SAT) 1.0 1.1 mV I C =5A, I B =200mA* Base-emitter turn-on voltage V BE(ON) 0.925 1.05 mV I C =5A, V CE =2V* Static forward current transfer ratio H FE Transition frequency fT Output capacitance C OBO Switching times t ON t OFF 260 375 300 450 I C =10mA, V CE =2V* 50 75 IC=5A, VCE=2V* 10 25 IC=10A, VCE=2V* IC=1A, VCE=2V* 1200 140 MHz I C =50mA, V CE =10V f=100MHz 21 30 pF V CB =10V, f=1MHz* 162 nS 900 nS I C =2A, V CC =50V, I B1 =I B2 =20mA * Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ2%. ISSUE 2 - DECEMBER 2003 SEMICONDUCTORS 4 ZXT1053AK TYPICAL CHARACTERISTICS ISSUE 2 - DECEMBER 2003 5 SEMICONDUCTORS ZXT1053AK PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS DIM Millimeters Inches DIM Millimeters Min Max Inches Min Max Min Max A 2.18 2.38 0.086 0.094 e A1 ᎏ 0.127 0.005 H 9.40 10.41 0.370 0.410 b 0.635 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.762 1.114 0.030 0.045 L1 2.30 BSC 2.74 REF Max 0.090 BSC 0.108 REF b3 5.20 5.46 0.205 0.215 L2 c 0.457 0.609 0.018 0.024 L3 0.89 1.27 0.035 0.050 c2 0.457 0.584 0.018 0.023 L4 0.635 1.01 0.025 0.040 0.245 0.060 D 5.97 6.22 0.235 D1 5.20 ᎏ 0.205 E 6.35 6.73 0.250 E1 4.32 ᎏ 0.170 0.265 0.051 BSC Min 0.020 BSC L5 1.14 1.52 0.045 ⍜1⬚ 0⬚ 10⬚ 0⬚ 10⬚ ⍜⬚ 0⬚ 15⬚ 0⬚ 15⬚ © Zetex plc 2003 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - DECEMBER 2003 SEMICONDUCTORS 6