ZXT11N20DF SuperSOT4™ 20V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=20V; RSAT = 40m ; IC= 2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23 FEATURES • Extremely Low Equivalent On Resistance • Extremely Low Saturation Voltage • hFE characterised up to 5A • IC=2.5A Continuous Collector Current • SOT23 package APPLICATIONS • DC - DC Converters • Power Management Functions • Power switches • E C Motor control B ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXT11N20DFTA 7 8mm embossed 3000 units ZXT11N20DFTC 13 8mm embossed 10000 units DEVICE MARKING 2N0 ISSUE 1 - DECEMBER 1999 1 Top View ZXT11N20DF ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO 7.5 V Peak Pulse Current I CM 5 A Continuous Collector Current IC 2.5 A Base Current IB 500 mA Power Dissipation at TA=25°C (a) Linear Derating Factor PD 625 5 mW mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 200 °C/W Junction to Ambient (b) R θJA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. ISSUE 1 - DECEMBER 1999 2 ZXT11N20DF TYPICAL CHARACTERISTICS 0.7 Max Power Dissipation (W) IC Collector Current (A) 10 DC 1 1s 100ms 10ms 100m 1ms 100µs Single Pulse Tamb=25°C 10m 100m 1 10 VCE Collector-Emitter Voltage (V) Thermal Resistance (°C/W) 200 175 150 D=0.5 100 Single Pulse D=0.2 50 D=0.05 25 0 100µ D=0.1 1m 10m 100m 1 10 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 Derating Curve 225 75 0.5 Temperature (°C) Safe Operating Area 125 0.6 100 1k Pulse Width (s) Transient Thermal Impedance ISSUE 1 - DECEMBER 1999 3 120 140 160 ZXT11N20DF ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage TYP. UNIT CONDITIONS. 40 V I C =100A V (BR)CEO 20 V I C =10mA* Emitter-Base Breakdown Voltage V (BR)EBO 7.5 V I E =100A Collector Cut-Off Current I CBO 100 nA V CB =32V Emitter Cut-Off Current I EBO 100 nA V EB =6V Collector Emitter Cut-Off Current I CES 100 nA V CES =32V Collector-Emitter Saturation Voltage V CE(sat) 12 100 60 130 mV mV mV mV I C =0.1A, I B =10mA* I C =1A, I B =10mA* I C =1A, I B =100mA* I C =2.5A, I B =250mA* Base-Emitter Saturation Voltage V BE(sat) 0.9 1.0 V I C =2.5A, I B =250mA* Base-Emitter Turn-On Voltage V BE(on) 0.85 1.0 V I C =2.5A, V CE =2V* Static Forward Current Transfer Ratio h FE Transition Frequency fT Output Capacitance C obo Turn-On Time Turn-Off Time 7 65 40 90 200 300 250 150 100 MAX. I C =10mA, V CE =2V* I C =100mA, V CE =2V* I C =1A, V CE =2V* I C =3A, V CE =2V* I C =5A, V CE =2V* 900 160 MHz I C =50mA, V CE =10V f=50MHz 20 pF V CB =10V, f=1MHz t (on) 122 ns t (off) 295 ns V CC =10V, I C =2A I B1 =I B2 =20mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ISSUE 1 - DECEMBER 1999 4 ZXT11N20DF TYPICAL CHARACTERISTICS 0.25 IC/IB=50 Tamb=25°C 100m 0.15 VCE(SAT) (V) VCE(SAT) (V) 0.20 100°C 0.10 25°C 0.05 IC/IB=100 10m IC/IB=50 -55°C 0.00 1m 10m 100m 1 IC Collector Current (A) IC/IB=10 1m 1m 10 10m 1.0 25°C -55°C 0.4 0.2 10m 100m 1 10 0.6 100°C 100m VBE(SAT) v IC VCE=2V -55°C 25°C 0.6 100°C 0.4 10m 100m 1 IC Collector Current (A) 10m 1 IC Collector Current (A) hFE v IC VBE(ON) (V) 25°C 1m IC Collector Current (A) 1m 0.8 0.4 0.0 1m 0.8 IC/IB=50 -55°C VBE(SAT) (V) Normalised Gain VCE=2V 0.6 1.0 10 100°C 1.0 0.8 1 VCE(SAT) v IC VCE(SAT) v IC 1.2 100m IC Collector Current (A) 10 VBE(ON) v IC ISSUE 1 - DECEMBER 1999 5 10 ZXT11N20DF PAD LAYOUT DETAILS N PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 F 0.085 0.15 0.0033 G NOM 1.9 K 0.01 0.10 0.0004 L 2.10 2.50 0.0825 N NOM 0.95 0.021 0.0059 NOM 0.075 0.004 0.0985 NOM 0.037 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide © Zetex plc 1999 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 1 - DECEMBER 1999 6