A Product Line of Diodes Incorporated ZXTD717MC DUAL 12V PNP LOW SATURATION TRANSISTORS Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • • BVCEO > -12V IC = -4A Continuous Collector Current Low Saturation Voltage (-140mV @ -1A) RSAT = 60 mΩ for a low equivalent On-Resistance hFE specified up to -10A for a high current gain hold up Dual NPN saving footprint and component count Low profile 0.8mm high package for thin applications RθJA efficient, 40% lower than SOT26 2 6mm footprint, 50% smaller than TSOP6 and SOT26 Lead-Free, RoHS Compliant (Note 1) Halogen and Antimony Free. “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Case: DFN3020B-8 Case material: Molded Plastic. “Green” Molding Compound. Terminals: Pre-Plated NiPdAu leadframe. Nominal package height: 0.8mm UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Weight: 0.013 grams (approximate) Applications • • • • DC-DC Converters Charging circuits Power switches Motor drive C1 C2 DFN3020B-8 C2 B2 B1 PNP Transistor C1 C1 C2 E2 Bottom View C1 B2 E1 B1 E1 E2 Top View C2 PNP Transistor Equivalent Circuit Pin 1 Bottom View Pin-Out Ordering Information Product ZXTD717MCTA Notes: Marking D11 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com Marking Information D11 ZXTD717MC Document Number DS31934 Rev. 3 - 2 D11 = Product type marking code Top view, dot denotes pin 1 1 of 7 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD717MC Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VCBO VCEO VEBO ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (Notes 3 & 6) (Notes 4 & 6) IC Base Current IB Value -20 -12 -7 -12 -4 -4.4 1 Unit V A Thermal Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol (Notes 3 & 6) Power Dissipation Linear Derating Factor (Notes 4 & 6) PD (Notes 5 & 6) (Notes 5 & 7) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: (Notes 3 & 6) (Notes 4 & 6) (Notes 5 & 6) (Notes 5 & 7) (Notes 6 & 8) RθJA RθJL TJ, TSTG Value 1.5 12 2.45 19.6 1.13 8 1.7 13.6 83.3 51.0 111 73.5 17.1 -55 to +150 Unit W mW/°C °C/W °C 3. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half. 4. Same as note (3), except the device is measured at t <5 sec. 5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper. 6. For a dual device with one active die. 7. For dual device with 2 active die running at equal power. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). ZXTD717MC Document Number DS31934 Rev. 3 - 2 2 of 7 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD717MC Thermal Characteristics VCE(SAT) Max Power Dissipation (W) IC Collector Current (A) 2.0 10 Limited 1 DC 1s 100ms 0.1 10ms 1ms 8sqcm 2oz Cu One active die Single Pulse, Tamb=25°C 0.01 0.1 100us 1 10 10sqcm 1oz Cu Two active die 1.5 8sqcm 2oz Cu One active die 1.0 10sqcm 1oz Cu One active die 0.5 0.0 0 VCE Collector-Emitter Voltage (V) 25 50 75 100 125 150 Temperature (°C) Derating Curve Safe Operating Area 80 Thermal Resistance (°C/W) Thermal Resistance (°C/W) 225 8sqcm 2oz Cu One active die 60 D=0.5 40 20 Single Pulse D=0.2 D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 1k 200 1oz Cu One active die 175 1oz Cu Two active die 150 125 100 75 50 2oz Cu One active die 2oz Cu Two active die 25 0 0.1 Pulse Width (s) 1 10 100 Board Cu Area (sqcm) Thermal Resistance v Board Area Transient Thermal Impedance PD Dissipation (W) 3.5 3.0 2.5 2.0 2oz Cu Two active die Tamb=25°C Tj max=150°C Continuous 2oz Cu One active die 1.5 1.0 1oz Cu Two active die 1oz Cu One active die 0.5 0.0 0.1 1 10 100 Board Cu Area (sqcm) Power Dissipation v Board Area ZXTD717MC Document Number DS31934 Rev. 3 - 2 3 of 7 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD717MC Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES Min -20 -12 -7 - Typ -35 -25 -8.5 - Max -100 -100 -100 Unit V V V nA nA nA hFE 300 300 180 60 45 475 450 275 100 70 - - Collector-Emitter Saturation Voltage (Note 9) VCE(sat) - -10 -100 -100 -195 -240 -17 -140 -150 -300 -310 mV mV mV mV mV Base-Emitter Turn-On Voltage (Note 9) Base-Emitter Saturation Voltage (Note 9) Output Capacitance VBE(on) VBE(sat) Cobo - -0.87 -0.97 21 -0.96 -1.07 30 V V pF Transition Frequency fT 100 110 - MHz Turn-on Time Turn-off Time ton toff - 70 130 - ns ns Static Forward Current Transfer Ratio (Note 9) Notes: Test Condition IC = -100µA IC = -10mA IE = -100µA VCB = -16V VEB = -6V VCES = -10V IC = -10mA, VCE = -2V IC = -100mA, VCE = -2V IC = -2.5A, VCE = -2V IC = -8A, VCE = -2V IC = -10A, VCE = -2V IC = -0.1A, IB = -10mA IC = -1A, IB = -10mA IC = -1.5A, IB = -50mA IC = -3A, IB = -50mA IC = -4A, IB= -150mA IC = -4A, VCE = -2V IC= -4A, IB = -150mA VCB = -10V. f = 1MHz VCE = -10V, IC = -50mA, f = 100MHz VCC = -6V, IC = -2A IB1 = IB2 = -50mA 9. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2% ZXTD717MC Document Number DS31934 Rev. 3 - 2 4 of 7 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD717MC Typical Electrical Characteristics 0.25 IC/IB=50 Tamb=25°C 0.20 VCE(SAT) (V) VCE(SAT) (V) 100m IC/IB=100 10m IC/IB=50 IC/IB=10 1m 1m 10m 100m 1 25°C 0.10 -55°C 0.05 0.00 1m 10 100°C 0.15 IC Collector Current (A) 10m 450 25°C 360 0.6 270 0.4 180 -55°C 0.2 0.0 1m 90 10m 100m 1 10 0 1.0 VBE(SAT) (V) 540 1.0 0.8 630 Typical Gain (hFE) Normalised Gain 1.2 VCE=2V 100°C 10 IC/IB=50 0.8 -55°C 25°C 0.6 100°C 0.4 1m 10m 100m 1 10 IC Collector Current (A) IC Collector Current (A) hFE v IC 1.0 1 VCE(SAT) v IC VCE(SAT) v IC 1.4 100m IC Collector Current (A) VBE(SAT) v IC VCE=2V VBE(ON) (V) 0.8 -55°C 0.6 25°C 0.4 0.2 1m 100°C 10m 100m 1 10 IC Collector Current (A) VBE(ON) v IC ZXTD717MC Document Number DS31934 Rev. 3 - 2 5 of 7 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD717MC Package Outline Dimensions A DFN3020B-8 Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z 0.375 All Dimensions in mm A3 A1 D D4 D4 D2 E E2 b Z e L Suggested Pad Layout C X Y1 G1 G Y2 Y X1 ZXTD717MC Document Number DS31934 Rev. 3 - 2 Dimensions C G G1 X X1 Y Y1 Y2 6 of 7 www.diodes.com Value (in mm) 0.650 0.285 0.090 0.400 1.120 0.730 0.500 0.365 December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD717MC IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com ZXTD717MC Document Number DS31934 Rev. 3 - 2 7 of 7 www.diodes.com December 2010 © Diodes Incorporated