ZXTN19020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC(cont) = 9A VCE(sat) < 35mV @ 1A RCE(sat) = 20mΩ PD = 3.0W Complementary part number ZXTP19020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. B Features • Higher power dissipation SOT223 package • High gain • High peak current • Low saturation voltage • 70V forward blocking voltage • 4.5V reverse blocking voltage E Applications E • DC - DC converters • Motor drive • Relay, lamp and solenoid drive • Regulator circuits C B Ordering information Device ZXTN19020DGTA C Pinout - top view Reel size (inches) Tape width (mm) Quantity per reel 7 12 1000 Device marking ZXTN19020D Issue 1 - January 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com ZXTN19020DG Absolute maximum ratings Parameter Symbol Limit Unit Collector-Base voltage VCBO 70 V Collector-Emitter voltage (forward blocking) VCEX 70 V Collector-Emitter voltage VCEO 20 V Emitter-Collector voltage (reverse blocking) VECX 6 V Emitter-Base voltage VEBO 7 V Continuous Collector current(c) IC 9 A Base current IB 1 A Peak pulse current ICM 20 A Power dissipation at TA =25°C(a) PD 1.2 W 9.6 mW/°C 1.6 W 12.8 mW/°C 3.0 W 24 mW/°C 5.3 W 42 mW/°C 9.4 W 75 mW/°C Tj, Tstg -55 to 150 °C Linear derating factor PD Power dissipation at TA =25°C(b) Linear derating factor PD Power dissipation at TA =25°C(c) Linear derating factor PD Power dissipation at TA =25°C(d) Linear derating factor PD Power dissipation at TC =25°C(e) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Symbol Limit Unit Junction to ambient(a) R⍜JA 104 °C/W Junction to ambient(b) R⍜JA 78 °C/W Junction to ambient(c) R⍜JA 42 °C/W Junction to ambient(d) R⍜JA 23.5 °C/W Junction to case(e) R⍜JC 12.3 °C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<5 seconds. (e) Junction to case (collector tab). Typical Issue 1 - January 2008 © Zetex Semiconductors plc 2008 2 www.zetex.com ZXTN19020DG Thermal characteristics Issue 1 - January 2008 © Zetex Semiconductors plc 2008 3 www.zetex.com ZXTN19020DG Electrical characteristics (at Tamb = 25°C unless otherwise stated). Parameter Symbol Collector-Base breakdown BVCBO voltage Collector-Emitter BVCEX breakdown voltage (forward blocking) Min. 70 Typ. 100 Max. Unit V Conditions IC = 100A 70 100 V IC = 100A, RBE < 1kΩ or -1V < VBE < 0.25V Collector-Emitter breakdown voltage Emitter-Collector breakdown voltage (reverse blocking) BVCEO 20 30 V IC = 10mA (*) BVECX 6 8.4 V Emitter-Collector breakdown voltage (reverse blocking) Emitter-Base breakdown voltage Collector-Base cut-off current BVECO 4.5 5.7 V IE = 100A, RBC < 1kΩ or 0.25V > VBC > -0.25V IE = 100A BVEBO 7 8.4 V IE = 100A Collector-Emitter cut-off current ICEX Emitter cut-off current Collector-Emitter saturation voltage IEBO VCE(sat) Base-Emitter saturation voltage Base-Emitter turn-on voltage Static forward current transfer ratio Transition frequency ICBO 50 0.5 nA A 100 nA VBE(sat) <1 27 50 80 63 85 200 1040 50 35 70 100 80 110 250 1150 nA mV mV mV mV mV mV mV VBE(on) 910 1050 mV 900 fT 450 390 175 75 30 160 Input capacitance Cibo 297 400 pF VEB = 0.5V, f = 1MHz(*) Output capacitance Cobo 32.6 40 pF VCB = 10V, f = 1MHz(*) Delay time Rise time Storage time Fall time td tr ts tf 129 96 398 90 ns ns ns ns IC = 1A, VCC = 10V, IB1 =- IB2 = 10mA hFE <1 300 260 130 50 MHz VCB = 70V VCB = 70V, Tamb= 100°C VCE = 70V, RBE < 1kΩ or -1V < VBE < 0.25V VEB = 5.6V IC = 1A, IB = 100mA(*) IC = 1A, IB = 10mA(*) IC = 2A, IB = 20mA(*) IC = 2A, IB = 40mA(*) IC = 4A, IB = 400mA(*) IC = 9A, IB = 450mA(*) IC = 9A, IB = 450mA(*) IC = 9A, VCE = 2V(*) IC = 100mA, VCE = 2V(*) IC = 2A, VCE = 2V(*) IC = 9A, VCE = 2V(*) IC = 15A, VCE = 2V(*) IC = 20A, VCE = 2V(*) IC = 50mA, VCE = 10V f = 100MHz NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%. Issue 1 - January 2008 © Zetex Semiconductors plc 2008 4 www.zetex.com ZXTN19020DG Typical characteristics Issue 1 - January 2008 © Zetex Semiconductors plc 2008 5 www.zetex.com ZXTN19020DG Intentionally left blank Issue 1 - January 2008 © Zetex Semiconductors plc 2008 6 www.zetex.com ZXTN19020DG Package outline - SOT223 Dim. Millimeters Inches Dim. Millimeters Inches Min. Max. Min. Max. Min. Max. Min. Max. A - 1.80 - 0.071 D 6.30 6.70 0.248 0.264 A1 0.02 0.10 0.0008 0.004 e 2.30 BSC 0.0905 BSC A2 1.55 1.65 0.0610 0.0649 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 1 - January 2008 © Zetex Semiconductors plc 2008 7 www.zetex.com ZXTN19020DG Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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