ZXTN19020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC(cont) = 7.5A VCE(sat) < 35mV @ 1A RCE(sat) = 21m⍀ PD = 2.4W Complementary part number ZXTP19020DZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. B Features • 7.5A continuous current • Up to 20A peak current • Very low saturation voltage • 70V forward blocking voltage • 4.5V reverse blocking voltage E Applications • Emergency lighting circuits • Motor driving • Camera strobe • Boost converter • CCFL backlight inverters • MOSFET gate drivers • LED Driving E C C B Pinout - top view Ordering information Device ZXTN19020DZTA Reel size (inches) Tape width (mm) Quantity per reel 7 12 1000 Device marking 1L8 Issue 1 - January 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com ZXTN19020DZ Absolute maximum ratings Parameter Symbol Limit Unit Collector-Base voltage VCBO 70 V Collector-Emitter voltage (forward blocking) VCEX 70 V Collector-Emitter voltage VCEO 20 V Emitter-Collector voltage (reverse blocking) VECX 6 V Emitter-Base voltage VEBO 7 V Continuous Collector current(c) IC 7.5 A Base current IB 1 A Peak pulse current ICM 20 A Power dissipation at TA =25°C(a) PD 1.1 W 8.8 mW/°C 1.8 W 14.4 mW/°C 2.4 W 19.2 mW/°C 4.46 W 35.7 mW/°C 27.8 W 222 mW/°C Tj, Tstg -55 to 150 °C Linear derating factor PD Power dissipation at TA =25°C(b) Linear derating factor PD Power dissipation at TA =25°C(c) Linear derating factor PD Power dissipation at TA =25°C(d) Linear derating factor PD Power dissipation at TC =25°C(e) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Symbol Limit Unit Junction to ambient(a) R⍜JA 117 °C/W Junction to ambient(b) R⍜JA 68 °C/W Junction to ambient(c) R⍜JA 51 °C/W Junction to ambient(d) R⍜JA 28 °C/W Junction to case(e) R⍜JC 4.69 °C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<5 seconds. (e) Junction to case (collector tab). Typical Issue 1 - January 2008 © Zetex Semiconductors plc 2008 2 www.zetex.com ZXTN19020DZ Thermal characteristics Issue 1 - January 2008 © Zetex Semiconductors plc 2008 3 www.zetex.com ZXTN19020DZ Thermal characteristics Issue 1 - January 2008 © Zetex Semiconductors plc 2008 4 www.zetex.com ZXTN19020DZ Electrical characteristics (at Tamb = 25°C unless otherwise stated). Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage (forward blocking) Collector-Emitter breakdown voltage Emitter-Collector breakdown voltage (reverse blocking) Emitter-Collector breakdown voltage (reverse blocking) Emitter-Base breakdown voltage Collector-Base cut-off current Symbol BVCBO Min. 70 Typ. 100 BVCEX 70 100 V IC = 100μA, RBE ≤ 1kΩ or -1V < VBE < 0.25V BVCEO 20 30 V IC= 10mA (*) BVECX 6 8.4 V IE = 100μA, RBC ≤ 1kΩ or 0.25V > VBC > -0.25V BVECO 4.5 5.7 V IE = 100μA BVEBO 7.0 8.4 V IE = 100μA <1 ICBO Max. Unit V 50 0.5 nA μA VCB = 70V VCB = 70V, Tamb=100°C 100 nA VCE = 70V, RBE ≤ 1kΩ or -1V < VBE < 0.25V <1 50 nA VEB = 5.6V 32 70 100 80 105 200 1100 mV mV mV mV mV mV mV IC = 1A, IB = 100mA(*) IC = 1A, IB = 10mA(*) IC = 2A, IB = 20mA(*) IC = 2A, IB = 40mA(*) IC = 4A, IB = 400mA(*) IC = 7.5A, IB = 375mA(*) mV IC = 7.5A, VCE = 2V(*) Collector-Emitter cut-off current ICEX Emitter cut-off current IEBO Collector-Emitter saturation voltage VCE(sat) Base-Emitter saturation voltage Base-Emitter turn-on voltage Static forward current transfer ratio VBE(sat) 26 50 75 60 83 155 1000 VBE(on) 870 1000 450 390 210 75 35 900 Transition frequency fT 160 Input capacitance Cibo 297 Output capacitance Cobo 32.6 Delay time td 129 ns Rise time tr 96 ns Storage time ts 398 ns Fall time tf 90 ns hFE 300 260 150 50 Conditions IC = 100μA IC = 7.5A, IB = 375mA(*) IC = 100mA, VCE = 2V(*) IC = 2A, VCE = 2V(*) IC = 7.5A, VCE = 2V(*) IC = 15A, VCE = 2V(*) IC = 20A, VCE = 2V(*) MHz IC = 50mA, VCE = 10V f = 100MHz 400 pF VEB = 0.5V, f = 1MHz(*) 40 pF VCB = 10V, f = 1MHz(*) IC = 1A, VCC = 10V, IB1 =-IB2 = 10mA NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%. Issue 1 - January 2008 © Zetex Semiconductors plc 2008 5 www.zetex.com ZXTN19020DZ Typical characteristics Issue 1 - January 2008 © Zetex Semiconductors plc 2008 6 www.zetex.com ZXTN19020DZ Package outline - SOT89 D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches Min Max Min Max A 1.40 1.60 0.550 0.630 B 0.44 0.56 0.017 B1 0.36 0.48 C 0.35 D D1 DIM Millimeters Inches Min Max Min Max E 2.29 2.60 0.090 0.102 0.022 E1 2.13 2.29 0.084 0.090 0.014 0.019 e 1.50 BSC 0.059 BSC 0.44 0.014 0.017 e1 3.00 BSC 0.118 BSC 4.40 4.60 0.173 0.181 H 3.94 4.25 0.155 0.167 1.52 1.83 0.064 0.072 L 0.89 1.20 0.035 0.047 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 1 - January 2008 © Zetex Semiconductors plc 2008 7 www.zetex.com ZXTN19020DZ Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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