ZXTN25012EZ 12V NPN high gain transistor in SOT89 Summary BVCEO > 12V BVECX > 6V hFE > 500 IC(cont) = 6.5A VCE(sat) < 38mV @ 1A RCE(sat) = 25m⍀ PD = 2.4W Complementary part number ZXTP25012EZ Description C Packaged in the SOT89 outline this new ultra high gain, low saturation 12V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions B Features E • 6.5A continuous current • Up to 15A peak current • Very low saturation voltages • 6V reverse blocking voltage Applications E • LED driving • Motor driving • Boost converters • Royer converters • Camera strobe • MOSFET gate drivers C C B Pinout - top view Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel 7 12 1000 ZXTN25012EZTA Device marking 1K7 Issue 1 - December 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXTN25012EZ Absolute maximum and thermal ratings Parameter Symbol Limit Unit Collector-Base voltage VCBO 20 V Collector-Emitter voltage VCEO 12 V Emitter-Collector voltage (reverse blocking) VECX 6 V Emitter-Base voltage VEBO 7 V Continuous Collector current(c) IC 6.5 A Base current IB 1 A Peak pulse current ICM 15 A Power dissipation at TA =25°C(a) PD 1.1 W 8.8 mW/°C 1.8 W 14.4 mW/°C 2.4 W 19.2 mW/°C 4.46 W 35.7 mW/°C 19.2 W 153 mW/°C Tj, Tstg -55 to +150 °C Symbol Limit Unit Junction to ambient(a) R⍜JA 117 °C/W Junction to ambient(b) R⍜JA 68 °C/W Junction to ambient(c) R⍜JA 51 °C/W Junction to ambient(d) R⍜JA 28 °C/W Junction to case(e) R⍜JC 7.95 °C/W Linear derating factor PD Power dissipation at TA =25°C(b) Linear derating factor PD Power dissipation at TA =25°C(c) Linear derating factor PD Power dissipation at TA =25°C(d) Linear derating factor PD Power dissipation at TC =25°C(e) Linear derating factor Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<5 seconds. (e) Junction to case (collector tab). Typical Issue 1 - December 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com ZXTN25012EZ Thermal characteristics Issue 1 - December 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com ZXTN25012EZ Thermal characteristics Issue 1 - December 2007 © Zetex Semiconductors plc 2007 4 www.zetex.com ZXTN25012EZ Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Collector breakdown voltage (reverse blocking) Symbol BVCBO Min. 20 Typ. 40 Emitter-Collector breakdown voltage (reverse blocking) Emitter-Base breakdown voltage Collector-Base cut-off current BVCEO 12 17 V IC = 10mA (*) BVECX 6 8 V IE = 100mA, RBC < 1kΩ or 0.25V > VBC > -0.25V BVECO 4.5 5.5 V IE = 100μA BVEBO 7 8.3 V IE = 100μA Collector-Emitter cut-off current ICEX Emitter cut-off current IEBO Collector-Emitter saturation voltage <1 Max. Unit V Conditions IC = 100μA 50 0.5 nA μA VCB = 20V VCB = 20V, Tamb= 100°C 100 nA VCE = 20V, RBE < 1kΩ or -1V < VBE < 0.25V <1 50 nA VEB = 5.6V VCE(sat) 31 50 70 90 200 38 60 85 130 270 mV mV mV mV mV IC = 1A, IB = 100mA(*) IC = 1A, IB = 10mA(*) IC = 2A, IB = 40mA(*) IC = 2A, IB = 20mA(*) IC = 6.5A, IB = 130mA(*) Base-Emitter saturation voltage Base-Emitter turn-on voltage Static forward current transfer ratio VBE(sat) 950 1050 mV IC = 6.5A, IB = 130mA(*) VBE(on) 840 950 mV IC = 6.5A, VCE = 2V(*) 800 750 250 50 1500 Transition frequency fT 260 Input capacitance Cibo 137 Output capacitance Cobo 25 ICBO hFE 500 500 185 30 IC = 10mA, VCE = 2V(*) IC = 1A, VCE = 2V(*) IC = 6.5A, VCE = 2V(*) IC = 15A, VCE = 2V(*) MHz IC = 50mA, VCE = 10V f = 100MHz 250 pF VEB = 0.5V, f = 1MHz(*) 35 pF VCB = 10V, f = 1MHz(*) Delay time td 71 ns Rise time tr 70 ns Storage time ts 233 ns Fall time tf 72 ns IC = 1A, VCC = 10V, IB1 =-IB2 = 10mA NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. Issue 1 - December 2007 © Zetex Semiconductors plc 2007 5 www.zetex.com ZXTN25012EZ Typical characteristics Issue 1 - December 2007 © Zetex Semiconductors plc 2007 6 www.zetex.com ZXTN25012EZ Package outline - SOT89 D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches Min Max Min Max A 1.40 1.60 0.550 0.630 B 0.44 0.56 0.017 B1 0.36 0.48 C 0.35 D D1 DIM Millimeters Inches Min Max Min Max E 2.29 2.60 0.090 0.102 0.022 E1 2.13 2.29 0.084 0.090 0.014 0.019 e 1.50 BSC 0.059 BSC 0.44 0.014 0.017 e1 3.00 BSC 0.118 BSC 4.40 4.60 0.173 0.181 H 3.94 4.25 0.155 0.167 1.52 1.83 0.064 0.072 L 0.89 1.20 0.035 0.047 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 1 - December 2007 © Zetex Semiconductors plc 2007 7 www.zetex.com ZXTN25012EZ Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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