ZXTN25015DFH 15V, SOT23, NPN medium power transistor Summary BVCEX > 30V BVCEO > 15V BVECO > 4.5V IC(cont) = 5A VCE(sat) < 40 mV @ 1A RCE(sat) = 25 m⍀ PD = 1.25W Complementary part number ZXTP25015DFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. B Features • High power dissipation SOT23 package • High gain • Low saturation voltage E Applications E • LED driving • DC-DC converters • MOSFET and IGBT gate driving • Motor drive C B Pinout - top view Ordering information Device ZXTN25015DFHTA Reel size (inches) Tape width (mm) Quantity per reel 7 8 3,000 Device marking 1A8 Issue 1 - May 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN25015DFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 40 V Collector-emitter voltage (forward blocking) VCEX 30 V Collector-emitter voltage VCEO 15 V Emitter-collector voltage (reverse blocking) VECO 4.5 V Emitter-base voltage VEBO 7 V IC 5 A Peak pulse current ICM 15 A Power dissipation at Tamb = 25°C(a) PD 0.73 W 5.84 mW/°C 1.05 W 8.4 mW/°C 1.25 W 9.6 mW/°C 1.81 W 14.5 mW/°C Tj, Tstg - 55 to 150 °C Symbol Limit Unit Junction to ambient(a) R⍜JA 171 °C/W Junction to ambient(b) R⍜JA 119 °C/W Junction to ambient(c) R⍜JA 100 °C/W Junction to ambient(d) R⍜JA 69 °C/W Continuous collector current(c) Linear derating factor PD Power dissipation at Tamb = 25°C(b) Linear derating factor PD Power dissipation at Tamb = 25°C(c) Linear derating factor PD Power dissipation at Tamb = 25°C(d) Linear derating factor Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper, in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - May 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN25015DFH Characteristics Issue 1 - May 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN25015DFH Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-emitter breakdown voltage BVCEO 15 22 V IC = 10mA (*) Collector-emitter breakdown voltage (reverse blocking) BVECX 6 8 V IE = 100A, RBC < 1k⍀ or 0.25v > VBC > -0.25V Collector-emitter breakdown voltage (reverse blocking) BVECO 4.5 5.3 V IE = 100A, 7 8.2 V IE = 100A Emitter-base breakdown voltage BVEBO Collector cut-off current ICBO Collector-emitter cut-off current ICEX Max. Unit Conditions <1 50 20 nA A VCB = 40V VCB = 40V, Tamb= 100°C - 100 nA VCE = 30V; RBE < 1k⍀ or -1V < VBE < 0.25V Emitter cut-off current IEBO <1 50 nA VEB = 5.6V Collector-emitter saturation voltage VCE(sat) 30 40 mV IC = 1A, IB = 100mA(*) 60 80 mV IC = 1A, IB = 10mA(*) 90 125 mV IC = 2A, IB = 20mA(*) 125 155 mV IC = 5A, IB = 500mA(*) 160 215 mV IC = 5A, IB = 100mA(*) Base-emitter saturation voltage VBE(sat) 990 1090 mV IC = 5A, IB = 500mA(*) Base-emitter turn-on voltage VBE(on) 805 900 mV IC = 5A, VCE = 2V(*) Static forward current transfer ratio hFE 300 450 900 300 400 IC = 2A, VCE = 2V(*) 150 275 IC = 5A, VCE = 2V(*) 25 40 IC = 15A, VCE = 2V(*) 150 240 Transition frequency fT Output capacitance COBO Delay time t(d) Rise time 22.7 IC = 10mA, VCE = 2V(*) MHz IC = 50mA, VCE = 10V f = 50MHz 30 pF VCB = 10V, f = 1MHz(*) 16 ns t(r) 41 ns VCC = 10V. IC = 3A, IB1 = IB2= 50mA. Storage time t(s) 148 ns Fall time t(f) 23 ns NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%. Issue 1 - May 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN25015DFH Typical characteristics Issue 1 - May 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN25015DFH Package outline - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.0375 NOM - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - May 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com