DIODES ZXTN25020DGTA

ZXTN25020DG
20V NPN high gain transistor in SOT223
Summary
BVCEX > 100V
BVCEO > 20V
BVECX > 6V
IC(cont) = 7A
VCE(sat) < 48mV @ 1A
RCE(sat) = 31mΩ
PD = 3.0W
Complementary part number ZXTP25020DG
Description
C
Packaged in the SOT223 outline this new low saturation NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
B
Features
•
Higher power dissipation SOT223 package
•
High gain
•
High peak current
•
Low saturation voltage
•
100V forward blocking voltage
•
6V reverse blocking voltage
E
Applications
E
•
DC - DC converters
•
Motor drive
•
Relay, lamp and solenoid drive
•
Regulator circuits
C
B
Ordering information
Device
ZXTN25020DGTA
C
Pinout - top view
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
12
1000
Device marking
ZXTN25
020D
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ZXTN25020DG
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-Base voltage
VCBO
100
V
Collector-Emitter voltage (forward blocking)
VCEX
100
V
Collector-Emitter voltage
VCEO
20
V
Emitter-Collector voltage (reverse blocking)
VECX
6
V
Emitter-Base voltage
VEBO
7
V
Continuous Collector current(c)
IC
7
A
Base current
IB
1
A
Peak pulse current
ICM
15
A
Power dissipation at TA =25°C(a)
PD
1.2
W
9.6
mW/°C
1.6
W
12.8
mW/°C
3.0
W
24
mW/°C
5.3
W
42
mW/°C
7.3
W
58
mW/°C
Tj, Tstg
-55 to 150
°C
Linear derating factor
PD
Power dissipation at TA =25°C(b)
Linear derating factor
PD
Power dissipation at TA =25°C(c)
Linear derating factor
PD
Power dissipation at TA =25°C(d)
Linear derating factor
PD
Power dissipation at TC =25°C(e)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to
ambient(a)
R⍜JA
104
°C/W
Junction to
ambient(b)
R⍜JA
78
°C/W
Junction to ambient(c)
R⍜JA
42
°C/W
Junction to ambient(d)
R⍜JA
23.5
°C/W
Junction to case(e)
R⍜JC
16
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d) As (c) above measured at t<5 seconds.
(e) Junction to case (collector tab). Typical
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ZXTN25020DG
1m
VCE(sat)
10 Limit
IC Collector Current (A)
IC Collector Current (A)
Thermal characteristics
Failure may occur in this region
100µ
DC
1
1s
100ms
100m
10ms
1ms
100µs
Single Pulse. Tamb=25°C
See note (c)
10m
100m
1
BVBR(CEO) = 20V
10µ
1µ
BVBR(CEV) = 100V
100n
10
0
VCE Collector-Emitter Voltage (V)
See note (c)
30
D=0.5
20
Single Pulse
D=0.2
10
0
100µ
D=0.05
D=0.1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Max Power Dissipation (W)
Transient Thermal Impedance
3.0
40
60
80
100
Safe Operating Area
Max Power Dissipation (W)
Thermal Resistance (°C/W)
Safe Operating Area
40
20
VCE Collector-Emitter Voltage (V)
Single Pulse. Tamb=25°C
See note (c)
100
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
See note (c)
2.5
2.0
See note (b)
1.5
1.0
See note (a)
0.5
0.0
0
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
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ZXTN25020DG
Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Parameter
Symbol
Collector-Base breakdown BVCBO
voltage
Collector-Emitter
BVCEX
breakdown voltage
(forward blocking)
Min.
100
Typ.
125
Max.
Unit
V
Conditions
IC = 100␮A
100
120
V
IC = 100␮A, RBE < 1kΩ
or
-1V < VBE < 0.25V
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
BVCEO
20
35
V
IC = 10mA (*)
BVECX
6
8.3
V
IE = 100␮A, RBC < 1kΩ
or
0.25V > VBC > -0.25V
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
BVECO
5
6.1
V
IE = 100␮A
BVEBO
7
8.35
V
IE = 100␮A
Collector-Emitter cut-off
current
ICEX
Emitter cut-off current
IEBO
Collector-Emitter
saturation voltage
ICBO
50
0.5
nA
␮A
VCB = 100V
VCB = 100V, Tamb= 100°C
100
nA
VCE = 100V, RBE < 1kΩ
or
-1V < VBE < 0.25V
<1
50
nA
VEB = 5.6V
VCE(sat)
40
60
100
130
225
48
75
120
180
290
mV
mV
mV
mV
mV
IC = 1A, IB = 100mA(*)
IC = 1A, IB = 20mA(*)
IC = 2A, IB = 40mA(*)
IC = 2A, IB = 20mA(*)
IC = 7A, IB = 700mA(*)
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
VBE(sat)
1090
1150
mV
IC = 7A, IB = 700mA(*)
VBE(on)
950
1050
mV
IC = 7A, VCE = 2V(*)
450
360
85
15
900
Transition frequency
fT
215
MHz
IC = 50mA, VCE = 10V
f = 100MHz
Input capacitance
Cibo
152
pF
VEB = 0.5V, f = 1MHz(*)
Output capacitance
Cobo
16.5
pF
VCB = 10V, f = 1MHz(*)
Delay time
td
67.7
ns
Rise time
tr
72.2
ns
Storage time
ts
361
ns
Fall time
tf
63.9
ns
hFE
<1
300
250
50
25
IC = 10mA, VCE = 2V(*)
IC = 2A, VCE = 2V(*)
IC = 7A, VCE = 2V(*)
IC = 15A, VCE = 2V(*)
IC = 1A, VCC = 10V,
IB1 = -IB2 = 10mA
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
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ZXTN25020DG
Typical characteristics
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ZXTN25020DG
Definitions
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