ZXTN25040DZ 40V, SOT89, NPN medium power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC(cont) = 5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 2.4W Complementary part number ZXTP25040DZ Description C Packaged in the SOT89 outline this new low saturation 40V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. B Features • Extremely low equivalent on resistance; RCE(sat) = 36m⍀ at 5A • 5A continuous current • Up to 10 amps peak current • Very low saturation voltages • Excellent hFE characteristics • 6V reverse blocking capability E E Applications C C • Emergency lighting circuits • Motor driving (including DC fans) • Solenoid, relay and actuator drivers • DC-DC modules • Backlight inverters • Power switches • MOSFET gate drivers B Pinout - top view Ordering information Device ZXTN25040DZTA Reel size (inches) Tape width (mm) Quantity per reel 7 12 1000 Device marking 1C8 Issue 2 - January 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXTN25040DZ Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 130 V Collector-emitter voltage (forward blocking) VCEX 130 V Collector-emitter voltage VCEO 40 V Emitter-collector voltage (reverse blocking) VECO 6 V Emitter-base voltage VEBO 7 V Continuous collector current(b) IC 5 A Base current IB 1 A Peak pulse current ICM 10 A Power dissipation at Tamb = 25°C(a) PD 1.1 W 8.8 mW/°C 1.8 W 14.4 mW/°C 2.4 W 19.2 mW/°C 4.46 W 35.7 mW/°C Tj, Tstg - 55 to 150 °C Symbol Limit Unit Linear derating factor PD Power dissipation at Tamb = 25°C(b) Linear derating factor PD Power dissipation at Tamb = 25°C(c) Linear derating factor Power dissipation at Tamb = PD 25°C(d) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Junction to ambient(a) R⍜JA 117 °C/W Junction to ambient(b) R⍜JA 68 °C/W Junction to ambient(c) R⍜JA 51 °C/W Junction to ambient(d) R⍜JA 28 °C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 2 - January 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com ZXTN25040DZ Thermal characteristics Issue 2 - January 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com ZXTN25040DZ Thermal characteristics (cont.) Issue 2 - January 2007 © Zetex Semiconductors plc 2007 4 www.zetex.com ZXTN25040DZ Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO 130 Collector-emitter breakdown voltage (forward blocking) BVCEX Collector-emitter breakdown voltage (base open) Unit Conditions 170 V IC = 100A 130 170 V VCE = 130V; RBE ⱕ 1k⍀ or -1V < VBE < 0.25V BVCEO 40 63 V IC = 10mA (*) Emitter-base breakdown voltage BVEBO 7 8.3 V IE = 100A Emitter-collector breakdown voltage (reverse blocking) BVECX 6 7.4 V IE = 100A, RBC ⱕ 1k⍀ or 0.25V > VBC > -0.25V Emitter-collector breakdown voltage (base open) BVECO 6 7.4 V IE = 100A, Collector-base cut-off current ICBO Max. <1 50 20 nA A VCB = 100V VCB = 100V, Tamb= 100°C Collector-emitter cut-off current ICEX - 100 nA VCE = 100V; RBE ⱕ 1k⍀ or -1V < VBE < 0.25V Emitter-base cut-off current IEBO <1 50 nA VEB = 5.6V Collector-emitter saturation voltage VCE(sat) 50 60 mV IC = 1A, IB = 100mA(*) 125 215 mV IC = 1A, IB = 10mA(*) 140 215 mV IC = 2A, IB = 40mA(*) 190 260 mV IC = 5A, IB = 500mA(*) VBE(sat) 1000 1100 mV IC = 5A, IB = 500mA(*) Base-emitter turn-on voltage VBE(on) 910 1000 mV IC = 5A, VCE = 2V(*) 300 450 900 300 450 IC = 1A, VCE = 2V(*) 20 40 IC = 5A, VCE = 2V(*) 10 IC = 10A, VCE = 2V(*) Base-emitter saturation voltage Static forward current transfer ratio hFE Transition frequency fT 190 Output capacitance COBO 11.7 Delay time td Rise time IC = 10mA, VCE = 2V(*) MHz IC = 50mA, VCE = 10V f = 100MHz 20 pF VCB = 10V, f = 1MHz(*) 64 ns tr 108 ns Storage time ts 428 ns VCC = 10V IC = 1A, IB1 = IB2= 10mA Fall time tf 130 ns NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%. Issue 2 - January 2007 © Zetex Semiconductors plc 2007 5 www.zetex.com ZXTN25040DZ Typical characteristics Issue 2 - January 2007 © Zetex Semiconductors plc 2007 6 www.zetex.com ZXTN25040DZ Package outline - SOT89 D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max A 1.40 1.60 0.550 0.630 E1 2.13 2.29 0.084 0.090 B 0.44 0.56 0.017 0.022 e 1.50 BSC 0.059 BSC B1 0.36 0.48 0.014 0.019 e1 3.00 BSC 0.118 BSC C 0.35 0.44 0.014 0.019 H 3.94 4.25 0.155 0.167 D 4.40 4.60 0.173 0.181 L 0.89 1.20 0.155 0.167 E 2.29 2.60 0.090 0.102 - - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 2 - January 2007 © Zetex Semiconductors plc 2007 7 www.zetex.com ZXTN25040DZ Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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