ZXTN25100DG 100V NPN high gain transistor in SOT223 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC(cont) = 3A VCE(sat) < 100mV @ 1A RCE(sat) = 85m⍀ PD = 3.0W Complementary part number ZXTP19100CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. B Features • High power dissipation SOT223 package • High gain • Low saturation voltage • 180V forward blocking voltage • 6V reverse blocking voltage E Applications E • PSU start up circuit • DC - DC converters • Motor drive • Relay, lamp and solenoid drive C B Ordering information Device ZXTN25100DGTA C Pinout - top view Reel size (inches) Tape width (mm) Quantity per reel 7 12 1000 Device marking • ZXTN25 100D Issue 1- December 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXTN25100DG Absolute maximum ratings Parameter Symbol Limit Unit Collector-Base voltage VCBO 180 V Collector-Emitter voltage (forward blocking) VCEX 180 V Collector-Emitter voltage VCEO 100 V Emitter-Collector voltage (reverse blocking) VECO 6 V Emitter-Base voltage VEBO 7 V Continuous Collector current(c) IC 3 A Base current IB 1 A Peak pulse current ICM 3.5 A Power dissipation at TA =25°C(a) PD 1.2 W 9.6 mW/°C 1.6 W 12.8 mW/°C 3 W 24 mW/°C 5.3 W 42 mW/°C 7.3 W 58 mW/°C Tj, Tstg -55 to 150 °C Linear derating factor PD Power dissipation at TA =25°C(b) Linear derating factor PD Power dissipation at TA =25°C(c) Linear derating factor PD Power dissipation at TA =25°C(d) Linear derating factor PD Power dissipation at TC =25°C(e) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Symbol Limit Unit Junction to ambient(a) R⍜JA 104 °C/W Junction to ambient(b) R⍜JA 78 °C/W Junction to ambient(c) R⍜JA 42 °C/W Junction to ambient(d) R⍜JA 23.5 °C/W Junction to case(e) R⍜JC 16 °C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) Mmounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<5 seconds. (e) Junction to case (collector tab). Typical Issue 1- December 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com ZXTN25100DG Thermal characteristics Issue 1- December 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com ZXTN25100DG Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage (forward blocking) Collector-Emitter breakdown voltage Emitter-Collector breakdown voltage (reverse blocking) Emitter-Collector breakdown voltage (reverse blocking) Emitter-Base breakdown voltage Collector-Base cut-off current Symbol BVCBO Min. 180 Typ. 220 BVCEX 180 220 V IC = 100μA, RBE < 1kΩ or -1V < VBC < 0.25V BVCEO 100 130 V IC= 10mA (*) BVECX 6 8.2 V IE = 100μA, RBC < 1kΩ or 0.25V > VBC > -0.25V BVECO 6 8.7 V IE = 100μA BVEBO 7 8.3 V IE = 100μA Collector-Emitter cut-off current ICEX Emitter-Base cut-off current Collector-Emitter saturation voltage IEBO ICBO Unit V Conditions IC = 100μA 50 0.5 nA μA VCB =180V VCB =180V, Tamb=100°C 100 nA VCE = 100V, RBE < 1kΩ or -1V < VBE < 0.25V <1 50 nA VEB = 5.6V VCE(sat) 120 80 215 200 170 100 345 500 mV mV mV mV IC = 0.5A, IB = 10mA(*) IC = 1A, IB = 100mA(*) IC = 2.5A, IB = 250mA(*) IC = 3A, IB = 600mA(*) Base-Emitter saturation voltage Base-Emitter turn-on voltage Static forward current transfer ratio VBE(sat) 1020 1100 mV IC = 3A, IB = 600mA(*) VBE(on) 905 1000 mV IC = 3A, VCE = 2V(*) 450 170 60 10 900 Transition frequency fT 175 Input capacitance Cibo 154 Output capacitance Cobo 8.7 Delay time td 16.4 ns Rise time tr 115 ns Storage time ts 763 ns Fall time tf 158 ns hFE <1 Max. 300 120 40 IC = 10mA, VCE = 2V(*) IC = 0.5A, VCE = 2V(*) IC = 1A, VCE = 2V(*) IC = 3A, VCE = 2V(*) MHz IC = 50mA, VCE = 10V f = 100MHz 250 pF VEB = 0.5V, f = 1MHz(*) 15 pF VCB = 10V, f = 1MHz(*) IC = 500mA, VCC =10V, IB1 = -IB2 = 50mA NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%. Issue 1- December 2007 © Zetex Semiconductors plc 2007 4 www.zetex.com ZXTN25100DG Typical characteristics Issue 1- December 2007 © Zetex Semiconductors plc 2007 5 www.zetex.com ZXTN25100DG Intentionally left blank Issue 1- December 2007 © Zetex Semiconductors plc 2007 6 www.zetex.com ZXTN25100DG Package outline - SOT223 Dim. Millimeters Inches Dim. Millimeters Inches Min. Max. Min. Max. Min. Max. Min. Max. A - 1.80 - 0.071 D 6.30 6.70 0.248 0.264 A1 0.02 0.10 0.0008 0.004 e 2.30 BSC 0.0905 BSC A2 1.55 1.65 0.0610 0.0649 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 1- December 2007 © Zetex Semiconductors plc 2007 7 www.zetex.com ZXTN25100DG Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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