DIODES ZXTP2029F

ZXTP2029F
100V, SOT23, PNP medium power transistor
Summary
V(BR)CEV > -130V, V(BR)CEO > -100V
IC(cont) = -3A
RCE(sat) = 45m⍀ typical
VCE(sat) < -80mV @ -1A
PD = 1.2W
Complementary part number ZXTN2020F
Description
C
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally suited
to applications where space is at a premium.
B
Features
•
Higher power dissipation SOT23 package
•
High peak current
•
Low saturation voltage
•
130V forward blocking voltage
E
E
Applications
•
MOSFET and IGBT gate driving
•
Motor drive
•
DC-DC converters
•
High side switches
C
B
Pinout - top view
Ordering information
Device
Reel size
(inches)
Tape width
Quantity per reel
7
8mm
3,000
ZXTP2029FTA
Device marking
953
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ZXTP2029F
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-130
V
Collector-emitter voltage
V(BR)CEV
-130
V
Collector-emitter voltage
VCEO
-100
V
Emitter-base voltage
VEBO
-7.0
V
Peak pulse current
ICM
-5
A
Continuous collector current(a)
IC
-3
A
Base current
IB
-1
A
Power dissipation @ TA=25oC(a)
Linear derating factor
PD
1.0
W
mW/oC
Power dissipation @ TA=25oC(b)
Linear derating factor
PD
Power dissipation @ TA=25oC(c)
Linear derating factor
PD
Operating and storage temperature
Tj:Tstg
8.0
1.2
W
mW/oC
9.6
1.56
12.5
W
mW/oC
-55 to +150
oC
Thermal resistance
Parameter
Symbol
Unit
125
C/W
RθJA
104
o
C/W
RθJA
80
o
C/W
RθJA
Junction to ambient (b)
Junction to ambient (c)
Junction to ambient
Value
o
(a)
NOTES:
(a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(c) As (b) above measured at t<5secs.
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ZXTP2029F
Characteristics
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ZXTP2029F
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base breakdown
voltage
V(BR)CBO
-130
Collector-emitter breakdown
voltage
V(BR)CEV
Collector-emitter breakdown
voltage
Unit
Conditions
-160
V
IC=-100μA
-130
-160
V
IC =−1μA, 1V> VBE>-0.3V
V(BR)CEO
-100
-120
V
IC=-10mA (a)
Emitter-base breakdown
voltage
V(BR)EBO
-7.0
-8.3
V
IE=-100μA
Collector-emitter cut-off
current
ICEV
-20
nA
VCE=-100V,
VBE = 1V
Collector-base cut-off current ICBO
-20
nA
VCB=-100V
Emitter-base cut-off current
IEBO
-10
nA
VEB=-6V
Static forward current
transfer ratio
HFE
Collector-emitter saturation
voltage
100
220
100
200
40
75
VCE(sat)
Max.
IC=-10mA, VCE=-2V(a)
IC=-1A, VCE=-2V(a)
300
Ic=-3A, VCE=-2V
-20
-30
mV
IC=-100mA, IB=-10mA(a)
-60
-80
mV
IC=-1A, IB=-100mA(a)
-135
-180
mV
IC=-3A, IB=-300mA(a)
-180
-250
mV
IC=-4A, IB=-400mA(a)
Base-emitter saturation
voltage
VBE(sat)
-0.90
-1.00
V
IC=-3A, IB=-300mA(a)
Base-emitter turn-on voltage
VBE(on)
-0.81
-0.90
V
IC=-3A, VCE=-2V(a)
Transition frequency
fT
150
MHz
Output capacitance
Cobo
39
pF
VCB=-10V, f=1MHz
Delay timetime
t(d)
21
ns
Rise time
t(r)
12
ns
VCC=-10V, IC=-1A,
IB1=IB2=-100mA
Storage time
t(stg)
410
ns
Fall time
t(f)
35
ns
Ic=-100mA, VCE=-10V,
f=50MHz
NOTES:
(a) Measured under pulsed conditions. Pulse width=300␮S. Duty cycle ⱕ2%.
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ZXTP2029F
Typical characteristics
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ZXTP2029F
Intentionally left blank
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ZXTP2029F
Package outline - SOT23
E
e
e1
b
3 leads
L1
D
E1
A
A1
Dim.
L
c
Millimeters
Inches
Dim.
Millimeters
Min.
Max.
Min.
Max.
A
-
1.12
-
0.044
e1
A1
0.01
0.10
0.0004
0.004
E
2.10
2.64
0.083
0.104
b
0.30
0.50
0.012
0.020
E1
1.20
1.40
0.047
0.055
c
0.085
0.20
0.003
0.008
L
0.25
0.60
0.0098
0.0236
D
2.80
3.04
0.110
0.120
L1
0.45
0.62
0.018
0.024
-
-
-
-
-
e
0.95 NOM
Min.
0.037 NOM
Max.
Inches
1.90 NOM
Min.
Max.
0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTP2029F
Definitions
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Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
Issue 3 - May 2007
© Zetex Semiconductors plc 2007
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