DIODES ZXTP25020DFHTA

ZXTP25020DFH
20V, SOT23, PNP medium power transistor
Summary
BVCEO > -20V
BVECO > -4V
IC(cont) = 4A
VCE(sat) < 60 mV @ 1A
RCE(sat) = 39 m⍀
PD = 1.25W
Complementary part number ZXTN25020DFH
Description
C
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Features
•
High power dissipation SOT23 package
•
High peak current
•
High gain
•
Low saturation voltage
E
E
Applications
•
MOSFET gate drivers
•
Power switches
•
Motor control
C
B
Pinout - top view
Ordering information
Device
ZXTP25020DFHTA
Reel size
(inches)
Tape width
(mm)
Quantity per reel
7
8
3000
Device marking
1A3
Issue 1 - July 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com
ZXTP25020DFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-25
V
Collector-emitter voltage (forward blocking)
VCEO
-20
V
Emitter-collector voltage (reverse blocking)
VECO
-4
V
Emitter-base voltage
VEBO
-7
V
Continuous collector current(c)
IC
-4
A
Base current
IB
-1
A
Peak pulse current
ICM
-10
A
Power dissipation at Tamb =25°C(a)
PD
0.73
W
5.84
mW/°C
1.05
W
8.4
mW/°C
1.25
W
9.6
mW/°C
1.81
W
14.5
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Limit
Unit
Junction to ambient(a)
R⍜JA
171
°C/W
Junction to ambient(b)
R⍜JA
119
°C/W
Junction to ambient(c)
R⍜JA
100
°C/W
Junction to ambient(d)
R⍜JA
69
°C/W
Linear derating factor
PD
Power dissipation at Tamb =25°C(b)
Linear derating factor
PD
Power dissipation at Tamb =25°C(c)
Linear derating factor
PD
Power dissipation at Tamb =25°C(d)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(c) For a device surface mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(d) As (c) above measured at t<5 seconds.
Issue 1 - July 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
ZXTP25020DFH
Characteristics
Issue 1 - July 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com
ZXTP25020DFH
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base breakdown
voltage
BVCBO
-25
Collector-emitter breakdown BVCEO
voltage (base open)
Emitter-base breakdown
voltage
Unit
Conditions
-55
V
IC = -100␮A
-20
-45
V
IC = -10mA (*)
BVEBO
-7
-8.3
V
IE = -100␮A
Emitter-collector breakdown
voltage (reverse blocking)
BVECO
-4
-8.5
V
IC = -100␮A(*)
Collector cut-off current
ICBO
<-1
Max.
-50
nA
VCB = -20V
-20
␮A
VCB = -20V, Tamb= 100°C
Emitter cut-off current
IEBO
<-1
-50
nA
VEB = -5.6V
Collector-emitter saturation
voltage
VCE(sat)
-50
-60
mV
IC = -1A, IB = -100mA(*)
-150
-210
mV
IC = -1A, IB = -10mA(*)
-180
-240
mV
IC = -2A, IB = -40mA(*)
-155
-180
mV
IC = -4A, IB = -400mA(*)
Base-emitter saturation
voltage
VBE(sat)
-960
-1050
mV
IC = -4A, IB = -400mA(*)
Base-emitter turn-on
voltage
VBE(on)
-815
-900
mV
IC = -4A, VCE = -2V(*)
Static forward current
transfer ratio
hFE
300
450
900
200
310
IC = -1A, VCE = -2V(*)
70
100
IC = -4A, VCE = -2V(*)
20
IC = -10A, VCE = -2V(*)
Transition frequency
fT
290
Output capacitance
COBO
21
Delay time
t(d)
14.2
Rise time
t(r)
16.3
Storage time
t(s)
186
Fall time
t(f)
32.7
30
IC = -10mA, VCE = -2V(*)
MHz
IC = -50mA, VCE = -10V
f = 50MHz
pF
VCB = -10V, f = 1MHz(*)
VCC = -10V. IC = -1A, IB1
= IB2= -50mA.
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
Issue 1 - July 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
ZXTP25020DFH
Typical characteristics
Issue 1 - July 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
ZXTP25020DFH
Package outline - SOT23
L
H
N
G
D
3 leads
M
A
B
C
K
Dim.
F
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
C
-
1.10
D
0.37
F
0.085
G
Dim.
Millimeters
Inches
Min.
Max.
Max.
Max.
H
0.33
0.51
0.013
0.020
0.055
K
0.01
0.10
0.0004
0.004
-
0.043
L
2.10
2.50
0.083
0.0985
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
0.15
0.0034
0.0059
N
0.95 NOM
-
-
1.90 NOM
0.075 NOM
0.0375 NOM
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
[email protected]
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - July 2006
© Zetex Semiconductors plc 2006
6
www.zetex.com