ZXTP25020DFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC(cont) = 4A VCE(sat) < 60 mV @ 1A RCE(sat) = 39 m⍀ PD = 1.25W Complementary part number ZXTN25020DFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. B Features • High power dissipation SOT23 package • High peak current • High gain • Low saturation voltage E E Applications • MOSFET gate drivers • Power switches • Motor control C B Pinout - top view Ordering information Device ZXTP25020DFHTA Reel size (inches) Tape width (mm) Quantity per reel 7 8 3000 Device marking 1A3 Issue 1 - July 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTP25020DFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -25 V Collector-emitter voltage (forward blocking) VCEO -20 V Emitter-collector voltage (reverse blocking) VECO -4 V Emitter-base voltage VEBO -7 V Continuous collector current(c) IC -4 A Base current IB -1 A Peak pulse current ICM -10 A Power dissipation at Tamb =25°C(a) PD 0.73 W 5.84 mW/°C 1.05 W 8.4 mW/°C 1.25 W 9.6 mW/°C 1.81 W 14.5 mW/°C Tj, Tstg -55 to 150 °C Symbol Limit Unit Junction to ambient(a) R⍜JA 171 °C/W Junction to ambient(b) R⍜JA 119 °C/W Junction to ambient(c) R⍜JA 100 °C/W Junction to ambient(d) R⍜JA 69 °C/W Linear derating factor PD Power dissipation at Tamb =25°C(b) Linear derating factor PD Power dissipation at Tamb =25°C(c) Linear derating factor PD Power dissipation at Tamb =25°C(d) Linear derating factor Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) For a device surface mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<5 seconds. Issue 1 - July 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXTP25020DFH Characteristics Issue 1 - July 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXTP25020DFH Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO -25 Collector-emitter breakdown BVCEO voltage (base open) Emitter-base breakdown voltage Unit Conditions -55 V IC = -100A -20 -45 V IC = -10mA (*) BVEBO -7 -8.3 V IE = -100A Emitter-collector breakdown voltage (reverse blocking) BVECO -4 -8.5 V IC = -100A(*) Collector cut-off current ICBO <-1 Max. -50 nA VCB = -20V -20 A VCB = -20V, Tamb= 100°C Emitter cut-off current IEBO <-1 -50 nA VEB = -5.6V Collector-emitter saturation voltage VCE(sat) -50 -60 mV IC = -1A, IB = -100mA(*) -150 -210 mV IC = -1A, IB = -10mA(*) -180 -240 mV IC = -2A, IB = -40mA(*) -155 -180 mV IC = -4A, IB = -400mA(*) Base-emitter saturation voltage VBE(sat) -960 -1050 mV IC = -4A, IB = -400mA(*) Base-emitter turn-on voltage VBE(on) -815 -900 mV IC = -4A, VCE = -2V(*) Static forward current transfer ratio hFE 300 450 900 200 310 IC = -1A, VCE = -2V(*) 70 100 IC = -4A, VCE = -2V(*) 20 IC = -10A, VCE = -2V(*) Transition frequency fT 290 Output capacitance COBO 21 Delay time t(d) 14.2 Rise time t(r) 16.3 Storage time t(s) 186 Fall time t(f) 32.7 30 IC = -10mA, VCE = -2V(*) MHz IC = -50mA, VCE = -10V f = 50MHz pF VCB = -10V, f = 1MHz(*) VCC = -10V. IC = -1A, IB1 = IB2= -50mA. NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%. Issue 1 - July 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com ZXTP25020DFH Typical characteristics Issue 1 - July 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com ZXTP25020DFH Package outline - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.0375 NOM - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - July 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com