ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC(cont) = 6A VCE(sat) < -65mV @ -1A RCE(sat) = 42m⍀ PD = 3.0W Complementary part number ZXTN25020DG Description C Packaged in the SOT223 outline this new low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. B Features • High peak current • Low saturation voltage • High gain • High power dissipation E Applications • Load switch • Motor drive • Disconnect switch • Regulator circuit E C B Pinout - top view Ordering information Device ZXTP25020DGTA C Reel size (inches) Tape width (mm) Quantity per reel 7 12 1000 Device marking • ZXTP25 020D Issue 1- December 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXTP25020DG Absolute maximum ratings Parameter Symbol Limit Unit Collector-Base voltage BVCBO -25 V Collector-Emitter voltage BVCEO -20 V Emitter-Collector voltage (reverse blocking) BVECO -4 V Emitter-Base voltage BVEBO -7 V Continuous Collector current(c) IC -6 A Base current IB -1 A Peak pulse current ICM -10 A Power dissipation at TA =25°C(a) PD 1.2 W 9.6 mW/°C Linear derating factor PD Power dissipation at TA =25°C(b) Linear derating factor PD Power dissipation at TA =25°C(c) Linear derating factor PD Power dissipation at TA =25°C(d) Linear derating factor 1.6 W 12.8 mW/°C 3 W 24 mW/°C 5.3 W 42 mW/°C 7.8 W 63 mW/°C Tj, Tstg -55 to 150 °C Symbol Limit Unit Junction to ambient(a) R⍜JA 104 °C/W Junction to ambient(b) R⍜JA 78 °C/W Junction to ambient(c) R⍜JA 42 °C/W Junction to ambient(d) R⍜JA 23.5 °C/W Junction to case(e) R⍜JC 16 °C/W PD Power dissipation at TC =25°C(e) Linear derating factor Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<5 seconds. (e) Junction to case (collector tab). Typical. Issue 1- December 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com ZXTP25020DG Thermal characteristics Issue 1- December 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com ZXTP25020DG Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Collector breakdown voltage (reverse blocking) Emitter-Collector breakdown voltage (reverse blocking) Emitter-Base breakdown voltage Collector-Base cut-off current Symbol BVCBO Min. -25 Typ. -55 BVCEO -20 -45 V IC= -10mA (*) BVECX -4 -8.5 V IE = -100μA, RBC < 1kΩ or 0.25V > VBC > -0.25V BVECO -4 -8.5 V IE = -100μA BVEBO -7 -8.3 V IE = -100μA ICBO <1 50 0.5 nA μA VCB = -25V VCB = -25V, Tamb=100°C Emitter cut-off current IEBO <1 100 nA VEB = -5.6V Collector-Emitter saturation voltage VCE(sat) -50 -150 -190 -250 -65 -215 -245 -355 mV mV mV mV IC = -1A, IB = -100mA(*) IC = -1A, IB = -10mA(*) IC = -2A, IB = -40mA(*) IC = -6A, IB = -600mA(*) Base-Emitter saturation voltage Base-Emitter turn-on voltage Static forward current transfer ratio VBE(sat) -1050 -1150 mV IC = -6A, IB = -600mA(*) VBE(on) -910 -1000 mV IC = -6A, VCE = -2V(*) 450 310 50 20 900 Transition frequency fT 290 Input capacitance Cibo 157 Output capacitance Cobo 21 Delay time td 14.2 ns Rise time tr 16.3 ns Storage time ts 186 ns Fall time tf 32.7 ns hFE 300 200 25 Max. Unit V Conditions IC = -100μA IC = -10mA, VCE = -2V(*) IC = -1A, VCE = -2V(*) IC = -6A, VCE = -2V(*) IC = -10A, VCE = -2V(*) MHz IC = -50mA, VCE = -10V f = 50MHz 400 pF VEB = -0.5V, f = 1MHz(*) 30 pF VCB = -10V, f = 1MHz(*) IC = -1A, VCC = -10V, IB1 = -IB2 = -50mA NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%. Issue 1- December 2007 © Zetex Semiconductors plc 2007 4 www.zetex.com Typical characteristics Issue 1- December 2007 © Zetex Semiconductors plc 2007 5 www.zetex.com ZXTP25020DG Intentionally left blank Issue 1- December 2007 © Zetex Semiconductors plc 2007 6 www.zetex.com ZXTP25020DG Package outline - SOT223 Dim. Millimeters Inches Dim. Millimeters Inches Min. Max. Min. Max. Min. Max. Min. Max. A - 1.80 - 0.071 D 6.30 6.70 0.248 0.264 A1 0.02 0.10 0.0008 0.004 e 2.30 BSC 0.0905 BSC A2 1.55 1.65 0.0610 0.0649 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 1- December 2007 © Zetex Semiconductors plc 2007 7 www.zetex.com ZXTP25020DG Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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