DMN62D0LFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT ADVANCE INFORMATION BVDSS Features and Benefits ID TA = +25°C RDS(ON) 2Ω @ VGS = 4V 320mA 2.5Ω @ VGS = 2.5V 50mA 60V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, Case: X1-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound; making it ideal for high-efficiency power management applications. DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) Drain X1-DFN1006-3 S Gate D G ESD PROTECTED Bottom View Top View Pin-Out Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Product DMN62D0LFB-7 DMN62D0LFB-7B Notes: Marking NK NK Reel Size (inches) 7 7 Tape Width (mm) 8 8 Quantity per Reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. DMN62D0LFB Document number: DS35409 Rev. 6 - 2 1 of 7 www.diodes.com August 2017 © Diodes Incorporated DMN62D0LFB Marking Information From date code 1527 (YYWW), this changes to: NK Top View Bar Denotes Gate and Source Side Top View Dot Denotes Drain Side NEW PRODUCT ADVANCE INFORMATION NK NK NK NK NK NK NK DMN62D0LFB-7 NK Top View Bar Denotes Gate and Source Side NK = Part Marking Code NK NK NK DMN62D0LFB-7B Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.0V Steady State TA = +25°C TA = +70°C Pulsed Drain Current (Note 6) Unit V V IDM Value 60 ±20 320 75 1 Symbol PD Max 0.5 Unit W RθJA 258 °C/W TJ, TSTG -55 to +150 °C ID mA A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Repetitive rating, pulse width limited by junction temperature. DMN62D0LFB Document number: DS35409 Rev. 6 - 2 2 of 7 www.diodes.com August 2017 © Diodes Incorporated DMN62D0LFB Electrical Characteristics (@ TA = +25°C, unless otherwise stated.) Gate-Source Leakage Symbol Min Typ Max Unit BVDSS IDSS 60 - - 1.0 ±100 ±500 ±2.0 V µA nA nA µA VGS = 0V, ID = 250μA VDS = 60V, VGS = 0V VGS = ±5V, VDS = 0V VGS = ±10V, VDS = 0V VGS = ±15V, VDS = 0V 1.3 1.5 1.9 2.6 0.8 0.9 1.0 2 2.5 3 1.3 V |Yfs| VSD 0.6 - VDS = VGS, ID = 250μA VGS = 4V, ID = 100mA VGS = 2.5V, ID = 50mA VGS = 1.8V, ID = 50mA VGS = 1.5V, ID = 10mA VDS = 10V, ID = 200mA VGS = 0V, IS = 115mA Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF - 32 4.4 2.9 126 0.45 0.08 0.08 3.4 3.4 26.4 16.3 64 9 6 250 0.9 0.2 0.2 10 10 45 30 IGSS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) Static Drain-Source On-Resistance RDS(ON) Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Ω S V Test Condition pF VDS = 25V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VGS = 4.5V, VDS = 10V, ID = 250mA ns ns ns ns VGS = 10V, VDS = 30V, RL = 150Ω, Rg = 25Ω, ID = 200mA 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 1 0.6 I D(A) @ VGS=2.5V 0.5 0.4 I D(A) @ VGS=4.0V ID, DRAIN CURRENT (A) ID (A) @ VGS=2.0V ID , DRAIN CURRENT (A) NEW PRODUCT ADVANCE INFORMATION Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C I D(A) @ VGS=1.8V I D (A) @ VGS=3.0V 0.3 ID (A) @ VGS =4.5V 0.2 I D(A) @ VGS=1.5V 0.1 0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS , DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics DMN62D0LFB Document number: DS35409 Rev. 6 - 2 5 0.1 0.01 0.001 0 3 of 7 www.diodes.com 0.5 1 1.5 VGS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics 2 August 2017 © Diodes Incorporated 2.5 2 RDS(ON)() Ave @ VG=2.5V 1.5 RDS(ON)() Ave @ VG=4.5V 1 0.5 0 0 0.1 0.2 0.3 ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.4 10 VGS = 5.0V Ave RDS(ON)( ) @ 125 C Ave RDS(ON)() @ 150C Ave RDS(ON)( ) @ 85 C 1 Ave RDS(ON)( ) @ 25 C Ave RDS(ON)( ) @ -55 C 0.1 0 0.1 0.2 0.3 ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 0.4 1.6 3 V TH, GATE THRESHOLD VOLTAGE (V) RD S(ON ),DRAIN-SOURCE ON-RESISTANCE( ) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () R DS(ON)() Ave @ VG=1.8V 2.5 2 1.5 1 0.5 1.4 1.2 1 0.8 0.6 0.4 0.2 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 Gate Threshold Variation vs. Junction Ambient Temperature Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature 1 60 CT, JUNCTION CAPACITANCE (pF) 55 0.1 IS (A) NEW PRODUCT ADVANCE INFORMATION 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE() DMN62D0LFB 0.01 50 45 40 35 30 25 20 15 10 5 0.001 0.1 0.3 0.5 0.7 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Diodes Forward Voltage vs. Current DMN62D0LFB Document number: DS35409 Rev. 6 - 2 1.1 0 0 4 of 7 www.diodes.com 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Junction Capacitance 20 August 2017 © Diodes Incorporated DMN62D0LFB 10 10 RDS(ON) Limited VDS =10V, ID=250mA PW =100µs ID, DRAIN CURRENT (A) VGS (V) 6 4 1 0.1 0 0 0.2 0.4 0.6 0.8 1 QG (nC) Fig. 9 Gate Charge Characteristics PW =1ms PW =10ms 0.01 2 PW =100ms PW =1s PW =10s TJ(Max) = 150℃ TA = 25℃ Single Pulse DC DUT on 1*MRP Board VGS= 4.5V 0.001 1.2 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.10 SOA, Safe Operation Area 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT ADVANCE INFORMATION 8 r(t) @ D=0.5 r(t) @ D=0.9 r(t) @ D=0.3 0.1 r(t) @ D=0.7 r(t) @ D=0.1 r(t) @ D=0.05 r(t) @ D=0.02 0.01 r(t) @ D=0.01 RJA(t)=r(t) * RJA r(t) @ D=0.005 RJA=273C/W Duty Cycle, D=t1 / t2 r(t) @ D=Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Fig. 11 Transient Thermal Resistance DMN62D0LFB Document number: DS35409 Rev. 6 - 2 5 of 7 www.diodes.com August 2017 © Diodes Incorporated DMN62D0LFB Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. X1-DFN1006-3 NEW PRODUCT ADVANCE INFORMATION A A1 Seating Plane D b Pin #1 ID e E b2 X1-DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 z 0.02 0.08 0.05 All Dimensions in mm z L3 L2 L1 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X1-DFN1006-3 C Y Dimensions C G1 G2 X X1 Y Y1 Y1 G2 X G1 Value (in mm) 0.70 0.30 0.20 0.40 1.10 0.25 0.70 X1 DMN62D0LFB Document number: DS35409 Rev. 6 - 2 6 of 7 www.diodes.com August 2017 © Diodes Incorporated DMN62D0LFB IMPORTANT NOTICE NEW PRODUCT ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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