DMP3036SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary BVDSS Features Low RDS(ON) – Ensures On State Losses Are Minimized TC = +25°C -30A Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) ID Max RDS(ON) Max 20mΩ @ VGS = -10V -30V 29mΩ @ VGS = -5V Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it Mechanical Data ideal for high efficiency power management applications. Case: PowerDI 3333-8 (Type UX) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.03 grams (Approximate) Applications Load Switch Power Management Functions ® PowerDI3333-8 (Type UX) D Pin1 S S S G G D Top View D D S D Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMP3036SFV-7 DMP3036SFV-13 Notes: Case PowerDI3333-8 (Type UX) PowerDI3333-8 (Type UX) Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. YYWW Marking Information 36F = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) 36F PowerDI is a registered trademark of Diodes Incorporated. DMP3036SFV Document number: DS39695 Rev. 3 - 2 1 of 7 www.diodes.com December 2017 © Diodes Incorporated DMP3036SFV Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage Gate-Source Voltage VDSS VGSS Value -30 ±25 Unit V V Continuous Drain Current, VGS = -10V (Note 6) TA = +25°C TA = +70°C ID -8.7 -7.0 A Continuous Drain Current, VGS = -10V (Note 7) TC = +25°C TC = +70°C ID -30 -25 A Maximum Continuous Body Diode Forward Current (Note 7) IS IDM -3.6 A Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%) -80 A Avalanche Current, L = 0.3mH (Note 8) IAS -17.5 A Avalanche Energy, L = 0.3mH (Note 8) EAS 64 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Symbol PD RJA PD RJA RJC TJ, TSTG Steady State Steady State Value 0.9 137 2.3 55 3.5 -55 to +150 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 — — — — — — -1 ±100 V µA nA VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = ±25V, VDS = 0V VGS(TH) RDS(ON) VSD — — — -0.7 -2.5 20 29 -1.2 V Static Drain-Source On-Resistance -1.0 — — — VDS = VGS, ID = -250µA VGS = -10V, ID = -8A VGS = -5V, ID = -5A VGS = 0V, IS = -1A Ciss Coss Crss RG Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 1931 226 168 11 8.8 16.5 2.6 3.6 8.2 14 65 31.6 9.3 12.2 — — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = -15V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -15V, ID = -10A ns VDD = -15V, VGS = -10V, RGEN = 3Ω, ID = -10A ns nC IF = -8A, di/dt = 500A/µs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMP3036SFV Document number: DS39695 Rev. 3 - 2 2 of 7 www.diodes.com December 2017 © Diodes Incorporated DMP3036SFV 30 VDS = -5.0V 25 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) )A ( T 20 N E R R U 15 C N I A R D 10 ,D I TA = 150C TA = 85C TA = 125C 5 TA = 25C TA = -55C 0 0 1 2 3 4 -V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 0.03 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.028 0.026 0.024 0.022 0.02 VGS = -5.0V 0.018 0.016 0.014 VGS = -10V 0.012 0.01 VGS = -20V 0.008 0.006 0.004 0.002 0 0 5 10 15 20 25 DRAIN SOURCE SOURCE CURRENT CURRENT (A) (A) -IIDD,, DRAIN Figure33Typical Typical On-Resistance On-Resistancevs. vs. Figure DrainCurrent Currentand andGate GateVoltage Voltage Drain 1.6 VGS = -4.5V 0.035 0.03 TA = 150C TA = 125C 0.025 TA = 25 C 0.02 TA = 85C TA = -55C 0.015 0.01 0.005 0 5 10 15 20 25 -IIDD,, DRAIN DRAIN SOURCE SOURCE CURRENT CURRENT (A) (A) Figure 4 Typical On-Resistance vs. Temperature Drain Current and Temperature 30 RDS(on), DRAIN-SOURCE ON-RESISTANCE () 0.03 VGS = -20V ID = -10A RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.04 0 30 5 VGS = -10V ID = -5A 1.4 VGS = -5V ID = -3A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMP3036SFV Document number: DS39695 Rev. 3 - 2 3 of 7 www.diodes.com VGS = -5V ID = -3A 0.025 0.02 0.015 VGS = -20V ID = -10A VGS = -10V ID = -5A 0.01 0.005 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature December 2017 © Diodes Incorporated DMP3036SFV 30 2.5 T (S G V VGS= 0V 2.3 25 2.1 1.9 -I , SOURCE CURRENT (A) ISS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) )V ( E G A T L O V D L O H S E R H T E T A G , )H -ID =1mA 1.7 -ID = 250µA 1.5 1.3 1.1 0.9 20 15 TA= 150C 10 TA= 125 C 5 T A= 25C TA= 85C TA= -55C 0.7 0 0.5 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0 0.3 0.6 0.9 1.2 1.5 VSD SOURCE-DRAIN VOLTAGE VOLTAGE (V) (V) SD,, SOURCE-DRAIN -V Figure88Diode Diode Forward ForwardVoltage Voltage vs. vs. Current Current Figure 10000 10000 -IDSS, LEAKAGE CURRENT (A) ) 1000 A n ( T N E R R 100 U C E G A 10 K A E L ,S S D 1 I CT, JUNCTION CAPACITANCE (pF) TA = 150°C TA = 125°C T A = 85°C TA = 25°C 0.1 C iss 1000 Coss 10 0 5 10 15 20 25 30 -V DS , DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Drain-Source Leakage Current vs. Voltage Crss 100 0 5 10 15 20 25 V , DRAIN-SOURCE VOLTAGE (V) -VDS DS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Junction Capacitance Capacitance 30 100 )A 10 ( T N E R R U 1 C N IA R D ,D 0.1 I -ID, DRAIN CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V) R DS(ON) Limited VDS = -15V ID = -10A 0 2 4 6 8 10 12 14 16 18 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics DMP3036SFV Document number: DS39695 Rev. 3 - 2 20 4 of 7 www.diodes.com DC PW= 10s PW= 1s PW= 100ms PW= 10ms PW= 1ms TJ(max) = 150°C TA= 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 0.01 0.1 PW= 100µs 1 10 -V DS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 December 2017 © Diodes Incorporated DMP3036SFV 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 (t)==r(t) r(t)**RRθJA RRθJA JA(t) JA RRθJA = 137℃/W JA = 137癈 /W Duty DutyCycle, Cycle,DD==t1/t2 t1/ t2 Single Pulse 0.001 0.00001 DMP3036SFV Document number: DS39695 Rev. 3 - 2 0.0001 0.001 0.01 0.1 1 t1, t1,PULSE PULSEDURATION DURATIONTIMES TIME (sec) (sec) Figure Figure 13 13Transient TransientThermal ThermalResistance Resistance 5 of 7 www.diodes.com 10 100 1000 December 2017 © Diodes Incorporated DMP3036SFV Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UX) D A D1 A1 0 E1 E c L E2 E2a E2b D2 k PowerDI3333-8 (Type UX) Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 -b 0.25 0.40 0.32 c 0.10 0.25 0.15 D 3.20 3.40 3.30 D1 2.95 3.15 3.05 D2 2.30 2.70 2.50 E 3.20 3.40 3.30 E1 2.95 3.15 3.05 E2 1.60 2.00 1.80 E2a 0.95 1.35 1.15 E2b 0.10 0.30 0.20 e 0.65 BSC k 0.50 0.90 0.70 L 0.30 0.50 0.40 θ 0° 12° 10° All Dimensions in mm L b e Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UX) X3 8 Y2 X2 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540 Y4 X1 Y1 Y3 Y 1 X DMP3036SFV Document number: DS39695 Rev. 3 - 2 C 6 of 7 www.diodes.com December 2017 © Diodes Incorporated DMP3036SFV IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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