Preliminary Datasheet CR12CM-12A R07DS1035EJ0400 Rev.4.00 Jul 30, 2013 600V - 12A - Thyristor Medium Power Use Features • IT (AV) : 12 A • VDRM : 600 V • IGT : 30 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AG-A (Package name: TO-220AB) RENESAS Package code: PRSS0004AA-A A (Package name: TO-220) 4 4 2, 4 3 1 2 12 3 1 1. 2. 3. 4. Cathode Anode Gate Anode 3 Applications Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage R07DS1035EJ0400 Rev.4.00 Jul 30, 2013 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V Page 1 of 8 CR12CM-12A Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Preliminary Symbol IT (RMS) IT (AV) Ratings 18.8 12 Unit A A ITSM 360 A I2t 544 A2 s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — 5 0.5 6 10 2 – 40 to +125 – 40 to +125 2.1 W W V V A °C °C g Conditions Commercial frequency, sine half wave Note2 180° conduction, Tc = 91°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak reverse current Symbol IRRM Min. — Typ. — Max. 2.0 Unit mA Test conditions Tj = 125°C, VRRM applied Repetitive peak off-state current On-state voltage IDRM VTM — — — — 2.0 1.6 mA V Tj = 125°C, VDRM applied Gate trigger voltage VGT — — 1.5 V Tc = 25°C, ITM = 40 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 1 A Gate non-trigger voltage Gate trigger current Holding current Thermal resistance VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM IGT IH Rth (j-c) — — — — 15 — 30 — 1.2 mA mA °C/W Tj = 25°C, VD = 6 V, IT = 1 A Tj = 25°C, VD = 12 V Junction to caseNote1 Note2 Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. 2. Case temperature is measured at anode tab 1.5 mm away from the molded case. R07DS1035EJ0400 Rev.4.00 Jul 30, 2013 Page 2 of 8 CR12CM-12A Preliminary Performance Curves 103 7 5 3 2 Rated Surge On-State Current 400 Tc = 25°C Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 102 7 5 3 2 101 7 5 3 2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 Gate Trigger Voltage (Tj = t°C) Gate Trigger Voltage (Tj = 25°C) × 100 (%) 160 120 80 40 2 3 4 5 7 101 2 3 4 5 7 102 Gate Trigger Current vs. Junction Temperature VFGM = 6V VGT = 1.5V PGM = 5W PG(AV) = 0.5W IFGM = 2A IGT = 30mA × 100 (%) Gate Characteristics 10 –1 VGD = 0.2V 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 103 7 5 3 2 Typical Example 102 7 5 3 2 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 Typical Example 3 2 102 7 5 3 2 101 200 Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 100 7 5 3 2 240 On-State Voltage (V) –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) R07DS1035EJ0400 Rev.4.00 Jul 30, 2013 Transient Thermal Impedance (°C/W) Gate Voltage (V) 101 7 5 3 2 320 280 0 100 100 3 2 360 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 10–2 10–4 2 3 5 710–3 2 3 5 710–2 2 3 5 710 –1 Time (s) Page 3 of 8 CR12CM-12A Preliminary Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 θ 48 360° 120° 90° Resistive, 40 inductive loads 180° 60° 32 24 θ = 30° 16 8 0 0 12 8 4 16 20 24 28 100 80 θ = 30° 60 180° 90° 60° 120° 40 0 32 0 2 4 6 8 10 12 14 16 Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Full Wave) Resistive, inductive loads Natural convection 120 64 Average Power Dissipation (W) Ambient Temperature (°C) θ 360° Average On-State Current (A) 140 θ 360° 180° 120° 100 80 60 θ = 30° 40 60° 20 0 90° 0 56 120° 180° 48 90° 40 60° 32 θ = 30° 24 16 θ θ 360° 8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 4 8 Resistive loads 20 24 28 32 12 16 Average On-State Current (A) Average On-State Current (A) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 160 θ 120 θ 360° Resistive loads 100 80 θ = 30° 60 180° 90° 60° 120° 40 20 0 4 8 12 16 20 24 28 Average On-State Current (A) R07DS1035EJ0400 Rev.4.00 Jul 30, 2013 32 Ambient Temperature (°C) 160 140 Case Temperature (°C) 120 20 160 0 Resistive, inductive loads 140 56 Case Temperature (°C) Average Power Dissipation (W) 64 Resistive loads Natural convection 140 120 θ θ 360° 180° 100 120° 80 60 θ = 30° 40 60° 20 0 90° 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Average On-State Current (A) Page 4 of 8 CR12CM-12A Preliminary Allowable Case Temperature vs. Average On-State Current (Rectangular Wave) 64 160 56 140 Case Temperature (°C) θ 48 360° 40 Resistive, inductive loads 180° 270° 32 120° 90° DC 60° 24 θ = 30° 16 8 0 4 8 12 16 20 24 28 80 60 θ = 30° 90° 180° DC 40 60° 120° 270° 0 4 8 12 16 20 24 28 Breakover Voltage vs. Junction Temperature × 100 (%) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) Resistive, inductive loads Natural convection θ 360° 120 100 DC 80 60 270° 180° θ = 30° 40 60° 90° 20 120° 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) Ambient Temperature (°C) 100 Average On-State Current (A) 140 0 × 100 (%) 360° Average On-State Current (A) 160 Breakover Voltage (dv/dt = vV/μs) Breakover Voltage (dv/dt = 1V/μs) θ 120 0 32 200 Typical Example 160 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage Holding Current vs. Junction Temperature 160 140 Typical Example Tj = 125°C 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/μs) R07DS1035EJ0400 Rev.4.00 Jul 30, 2013 32 180 Average On-State Current (A) × 100 (%) 0 Resistive, inductive loads 20 Holding Current (Tj = t°C) Holding Current (Tj = 25°C) Average Power Dissipation (W) Maximum Average Power Dissipation (Rectangular Wave) 103 7 5 Typical Example 3 2 102 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Page 5 of 8 Preliminary Gate Trigger Current vs. Gate Current Pulse Width 200 Typical Example 180 160 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) R07DS1035EJ0400 Rev.4.00 Jul 30, 2013 × 100 (%) Repetitive Peak Reverse Voltage vs. Junction Temperature Gate Trigger Current (tw) Gate Trigger Current (DC) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) × 100 (%) CR12CM-12A 103 7 5 Typical Example 3 2 102 7 5 3 2 101 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Gate Current Pulse Width (μs) Page 6 of 8 CR12CM-12A Preliminary Package Dimensions JEITA Package Code SC-46 RENESAS Code PRSS0004AG-A Previous Code TO-220ABS MASS[Typ.] 2.1g Unit: mm 4.5 ± 0.2 2.8 ± 0.1 Package Name TO-220AB 9.9 ± 0.2 + 0.10 φ3.6 ± 0.2 13.08 ± 0.20 (3.00) 9.2 ± 0.2 15.7 ± 0.2 1.30 – 0.05 1.62 Max 0.80 ± 0.10 2.6 Max 2.54 2.54 + 0.10 0.50 – 0.05 10.0 ± 0.2 Package Name TO-220 JEITA Package Code SC-46 RENESAS Code PRSS0004AA-A Previous Code ⎯ MASS[Typ.] 2.0g 10.5Max Unit: mm 4.5 φ3.6 3.8Max 12.5Min 16Max 7.0 3.2 1.3 1.0 0.8 0.5 2.54 2.6 4.5Max 2.54 2 R07DS1035EJ0400 Rev.4.00 Jul 30, 2013 Page 7 of 8 CR12CM-12A Preliminary Ordering Information Orderable Part Number CR12CM-12A#BB0 CR12CM-12A-A8#BB0 Note: Packing Tube Tube Quantity 50 pcs. 50 pcs. Remark Straight type A8 Lead form Please confirm the specification about the shipping in detail. R07DS1035EJ0400 Rev.4.00 Jul 30, 2013 Page 8 of 8 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-651-700, Fax: +44-1628-651-804 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2013 Renesas Electronics Corporation. All rights reserved. Colophon 2.2