BOARDCOM DEMO-MGA-725M4 Low noise amplifi er with bypass switch Datasheet

MGA-725M4
Low Noise Amplifier with Bypass Switch
In Miniature Leadless Package
Data Sheet
Description
Features
Broadcom's MGA-725M4 is an economical, easy-to-use
GaAs MMIC Low Noise Amplifier (LNA), which is designed
for an adaptive CDMA receiver LNA and adaptive CDMA
transmit driver amplifier.
 Operating frequency:
0.1 GHz ~ 6.0 GHz
 Noise figure:
1.2 dB at 800 MHz
1.4 dB at 1900 MHz
 Gain:
17.5 dB at 800 MHz
15.7 dB at 1900 MHz
 Bypass switch on chip
Loss = typ 1.6 dB (Id < 5 μA)
IIP3 = +10 dBm
 Adjustable Input IP3:
+2 to +14.7 dBm
 Miniature package:
1.4 mm x 1.2 mm
2.7 V to 5.0 V operation
The MGA-725M4 features a typical noise figure of 1.4 dB
and 14.4 dB associated gain from a single stage, feedback
FET amplifier. The output is internally matched to 50Ω.
The input is optimally internally matched for lowest noise
figure into 50Ω. The input may be additionally externally
matched for low VSWR through the addition of a single
series inductor. When set into the bypass mode, both
input and output are internally matched to 50Ω.
The MGA-725M4 offers an integrated solution of LNA
with adjustable IIP3. The IIP3 can be fixed to a desired
current level for the receiver’s linearity requirements. The
LNA has a bypass switch function, which sets the current
to zero and provides low insertion loss. The bypass mode
also boosts dynamic range when high level signal is
being received.
For the CDMA driver amplifier applications, the
MGA-725M4 provides suitable gain and linearity to meet
the ACPR requirement when the handset transmits the
highest power. When transmitting lower power, the
MGA-725M4 can be bypassed, saving the drawing current.
Applications
 CDMA (IS-95, J-STD-008) Receiver LNA
 Transmit Driver Amp
 TDMA (IS-136) handsets
MiniPak 1.4 mm x 1.2 mm Package
The MGA-725M4 is a GaAs MMIC, processed on
Broadcom's cost effective PHEMT (Pseudomorphic High
Electron Mobility Transistor). It is housed in the MiniPak
1412 package. It is part of the Broadcom CDMAdvantage
RF chipset.
Ax
Simplified Schematic
Pin Connections and Package Marking
OUTPUT
GROUND
Ax
Control
Input
&
Vref
INPUT
Output
& Vd
GainFET
GND
GND
GROUND
MGA-725M4 Absolute Maximum Ratings [1]
Symbol
Parameter
Units
Absolute
Maximum
Operation
Maximum
Vd
Maximum Input to Output Voltage
V
5.5
4.2
Vgs
Maximum Input to Ground DC Voltage
V
+.3
-5.5
+.1
-4.2
Id
Supply Current
mA
70
60
Pd
Power Dissipation[1,2]
mW
300
250
Pin
CW RF Input Power
dBm
+20
+13
Tj
Junction Temperature
°C
170
150
TSTG
Storage Temperature
°C
-65 to +150
-40 to +85
Thermal Resistance: [2]
 jc = 180°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Tcase = 25°C.
Electrical Specifications, Tc = +25°C, Zo = 50Ω, Id = 20 mA, Vd = 3V, unless noted.
Symbol
Units
Min.
Typ.
Max.

Id = 20 mA
V
-0.65
-0.51
-0.37
0.035
Parameter and Test Condition
Vgs test
[1]
f = 2.0 GHz Vd = 3.0V (Vds = 2.5V)
NF test
[1]
f = 2.0 GHz Vd = 3.0V (= Vds - Vgs)
Id = 20 mA
dB
1.4
1.8
0.06
Ga test[1]
f = 2.0 GHz Vd = 3.0V (= Vds - Vgs)
Id = 20 mA
dB
13.5
14.4
15.5
0.42
IIP3 test[1]
f = 2.04 GHz Vd = 3.0V (= Vds - Vgs)
Id = 20 mA
dBm
8.5
9.9
IL test[1,4]
f = 2.0 GHz Vd = 3.0V (Vds = 0V, Vgs = -3V)
Id = 0.0 mA
dB
1.6
Ig test
[1,4]
f = 2.0 GHz Vd = 3.0V (Vds = 0V, Vgs = -3V)
Id = 0.0 mA
μA
2.0
Nfo[2]
Minimum Noise Figure
As measured in Figure 2 Test Circuit
(Computed from s-parameter and noise
parameter performance as measured in a
50Ω impedance fixture)
f = 1.0 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.5 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
1.2
1.2
1.3
1.3
1.4
1.6
Gain[2]
Associated Gain at Nfo
As measured in Figure 2 Test Circuit
(Computed from s-parameter and noise
parameter performance as measured in a
50Ω impedance fixture)
f = 1.0 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.5 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
17.6
16.6
15.7
14.8
12.8
10.6
P1dB[1]
Output Power at 1 dB Gain Compression
As measured in Figure 1 Test Circuit
Frequency = 2.04 GHz
Id = 0 mA
Id = 5 mA
Id = 10 mA
Id = 20 mA
Id = 40 mA
Id = 60 mA
dBm
15.2
3.4
9.14
13.13
15.25
16.16
Id = 0 mA
Id = 5 mA
Id = 10 mA
Id = 20 mA
Id = 40 mA
Id = 60 mA
dBm
Input Return Loss as measured in Fig. 1
f = 2.0 GHz
dB
-8.2
0.41
RLout
Output Return Loss as measured in Fig. 1
f = 2.0 GHz
dB
-15
1.3
ISOL[1]
Isolation |S12|2 As measured in Fig. 2
f = 2.0 GHz
dB
-23.4
0.4
IIP3 [1]
Input Third Order Intercept Point
As measured in Figure 1 Test Circuit
Frequency = 2.04 GHz
RLin[1]
[1]
35
3.1
6.6
9.9
13.0
14.7
0.35
3.5
0.07
2.0
0.53
0.35
Notes:
1. Standard deviation and typical data as measured in the test circuit of Figure 1. Data based on 500 part sample size from 3 wafer lots.
2. Typical data computed from S-parameter and noise parameter data measured in a 50Ω system.
3. Vd = total device voltage = Vdg
4. Bypass mode voltages shown are used in production test. For source resistor biasing, Bypass mode is set by opening the source resistor.
2
1000 pF
RF
Input
RF
Input
Vds
1.2 nH
Ax
27 nH
27 nH
2.7 nH
1000 pF
Vgs
RF
Output
Bias
Tee
Ax
100 pF
47 pF
100 pF
Vd
ICM Fixture
Bias Tee
RF
Output
47 pF
Vgs
Figure 2. MGA-725M4 50Ω Test Circuit for S, Noise, and Power Parameters.
Figure 1. MGA-725M4 Production Test Circuit.
MGA-725M4 Typical Performance
Frequency = 2.0 GHz, Tc = 25°C, Zo = 50Ω, Vd = 3V, Id = 20 mA unless stated otherwise. All data as measured in Figure
2 test system (input and output presented to 50Ω).
18
3.0
14
16
12
2.5
14
1.5
INPUT IP3 (dBm)
GAIN (dB)
NF (dB)
10
12
2.0
10
8
6
1.0
0
1
2
3
4
5
2.7 V
3.0 V
3.3 V
2
0
0
6
0
1
2
FREQUENCY (GHz)
4
5
2
1
18
18
16
16
14
14
12
12
10
8
4
-40 C
+25 C
+85 C
3
2
4
5
0
6
0
1
2
FREQUENCY (GHz)
3
4
5
6
6
0
6
-40 C
+25 C
+85 C
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 8. Input Third Order Intercept Point vs.
Frequency and Temperature.
14
Input
Output
5
8
2
Figure 7. Gain vs. Frequency and Temperature.
8
4
10
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency and
Temperature.
3
4
-40 C
+25 C
+85 C
2
0
2
1
Figure 5. Input Third Order Intercept Point vs.
Frequency and Voltage.
6
1
0
FREQUENCY (GHz)
INPUT IP3 (dBm)
GAIN (dB)
3
0
0
6
Figure 4. Gain vs. Frequency and Voltage.
4
NF (dB)
3
2.7V
3.0V
3.3V
2
FREQUENCY (GHz)
Figure 3. Noise Figure vs. Frequency and Voltage.
0
12
-1
6
4
INSERTION LOSS (dB)
10
VSWR (LNA)
VSWR (LNA)
6
4
4
2.7 V
3.0 V
3.3 V
0.5
8
6
-2
-3
4
2
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 9. LNA on (Switch off) VSWR vs. Frequency.
0
-4
Input
Output
2
3
8
-40 C
+25 C
+85 C
-5
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 10. LNA off (Switch on) VSWR vs. Frequency.
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 11. Insertion Loss (Switch on) vs. Frequency
and Temperature.
MGA-725M4 Typical Performance, continued
Frequency = 2.0 GHz, Tc = 25°C, Zo = 50Ω, Vd = 3V, Id = 20 mA unless stated otherwise. All data as measured in Figure
2 test system (input and output presented to 50Ω).
14
14
12
12
10
10
18
16
8
6
4
8
6
2.7 V
3.0 V
3.3 V
0
1
2
3
4
5
0
6
8
6
0
1
2
3
4
5
2
1
2
1
18
18
16
14
14
12
12
10
8
4
-40 C
+25 C
+85 C
60
0
80
0
20
40
Id CURRENT (mA)
60
6
0
80
-40 C
+25 C
+85 C
0
20
40
60
80
Id CURRENT (mA)
Figure 17. Input Third Intercept Point vs. Current
and Temperature.
14
18
6
8
2
Figure 16. Associated Gain vs. Current and
Temperature.
16
5
10
Id CURRENT (mA)
Figure 15. Noise Figure vs. Current and
Temperature.
4
4
-40 C
+25 C
+85 C
2
0
3
Figure 14. Input Third Order Intercept Point vs.
Frequency and Current.
16
6
40
0
FREQUENCY (GHz)
INPUT IP3 (dBm)
GAIN (dB)
3
20
0
6
Figure 13. Output Power at 1 dB Compression vs.
Frequency and Temperature.
4
0
10 mA
20 mA
40 mA
2
FREQUENCY (GHz)
Figure 12. Output Power at 1 dB Compression vs.
Frequency and Voltage.
NF (dB)
10
4
2.7V
3.0V
3.3V
2
FREQUENCY (GHz)
1.00
Input
Output
Gamma
12
14
0.80
10
VSWR
10
8
0.60
8
Vref (V)
12
P1dB (dBm)
12
4
2
0
INPUT IP3 (dBm)
P1dB (dBm)
P1dB (dBm)
14
6
0.40
6
4
4
-40 C
+25 C
+85 C
2
0
0
20
40
60
80
Id CURRENT (mA)
Figure 18. Output Power at 1 dB Compression vs.
Current and Temperature.
4
0
-40 C
+25 C
+85 C
0.20
2
0
0
10
20
30
40
50
60
Id CURRENT (mA)
Figure 19. LNA on VSWR and Gamma Opt vs. Current.
0
10
20
30
40
50
Id CURRENT (mA)
Figure 20. Control Voltage vs. Current and
Temperature.
60
MGA-725M4 Typical Scattering Parameters: Bypass Mode
Tc = 25°C, Vd = 3.0 V, Id = 0 mA, Zo = 50Ω (test circuit of Figure 2)
Freq
(GHz)
S11
Mag.
S11
Ang.
S21
Mag.
S21
Ang.
S12
Mag.
S12
Ang.
S22
Mag.
S22
Ang.
S11
(dB)
S21
(dB)
S12
(dB)
S22
(dB)
0.1
0.5
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
0.991
0.741
0.580
0.536
0.498
0.468
0.442
0.418
0.395
0.378
0.362
0.349
0.334
0.326
0.357
0.345
0.338
0.326
0.321
0.319
0.288
0.272
0.263
0.256
0.249
0.243
0.229
0.227
0.218
0.221
0.224
-11.1
-44.1
-5.8
-61.8
-64.6
-66.8
-69.2
-70.9
-72.6
-74.7
-76.0
-77.6
-78.9
-79.9
-85.4
-86.0
-86.6
-87.7
-87.9
-88.9
-93.8
-97.0
-101.4
-106.1
-110.9
-114.8
-117.1
-125.3
-130.1
-137.5
-144.2
0.175
0.592
0.710
0.733
0.751
0.764
0.775
0.783
0.793
0.797
0.799
0.805
0.809
0.811
0.826
0.826
0.825
0.826
0.825
0.825
0.820
0.816
0.810
0.807
0.800
0.793
0.781
0.774
0.764
0.758
0.749
74.9
37.9
22.8
18.9
15.4
12.5
9.7
7.1
4.7
2.7
0.5
-1.5
-3.3
-5.1
-8.5
-10.2
-11.5
-13.2
-14.7
-14.6
-21.2
-27.4
-33.5
-39.3
-45.2
-50.7
-57.0
-62.6
-68.1
-73.5
-79.1
0.175
0.593
0.709
0.732
0.750
0.763
0.774
0.783
0.791
0.796
0.800
0.805
0.809
0.811
0.827
0.827
0.825
0.825
0.824
0.824
0.820
0.815
0.811
0.806
0.800
0.795
0.783
0.773
0.768
0.760
0.753
75.5
38.1
22.9
19.0
15.6
12.4
9.8
7.3
5.0
2.7
0.7
-1.3
-3.1
-5.1
-8.3
-10.0
-11.5
-12.9
-14.4
-14.6
-21.4
-27.4
-33.6
-39.2
-45.2
-50.7
-57.0
-62.6
-67.9
-73.2
-78.9
0.943
0.624
0.470
0.429
0.400
0.371
0.346
0.328
0.309
0.293
0.281
0.267
0.258
0.247
0.243
0.238
0.230
0.228
0.222
0.218
0.206
0.198
0.195
0.192
0.190
0.191
0.260
0.256
0.252
0.243
0.230
-15.1
-51.1
-64.1
-67.3
-69.6
-72.3
-74.0
-75.8
-77.2
-78.2
-79.5
-80.4
-80.9
-81.8
-86.5
-87.8
-88.5
-89.3
-90.6
-90.1
-94.6
-98.8
-103.8
-108.9
-114.5
-119.7
-138.9
-146.5
-153.6
-159.8
-166.5
-0.08
-2.61
-4.74
-5.41
-6.05
-6.60
-7.09
-7.58
-8.06
-8.45
-8.84
-9.14
-9.53
-9.74
-8.96
-9.25
-9.43
-9.73
-9.87
-9.92
-10.81
-11.31
-11.59
-11.84
-12.07
-12.30
-12.81
-12.88
-13.25
-13.11
-12.98
-15.12
-4.55
-2.97
-2.70
-2.49
-2.34
-2.22
-2.12
-2.02
-1.98
-1.94
-1.88
-1.84
-1.82
-1.66
-1.66
-1.67
-1.66
-1.67
-1.67
-1.72
-1.76
-1.83
-1.86
-1.94
-2.01
-2.14
-2.23
-2.34
-2.40
-2.51
-15.16
-4.54
-2.99
-2.71
-2.50
-2.35
-2.22
-2.13
-2.04
-1.98
-1.94
-1.89
-1.84
-1.82
-1.65
-1.65
-1.67
-1.67
-1.69
-1.68
-1.72
-1.77
-1.82
-1.88
-1.93
-2.00
-2.13
-2.23
-2.30
-2.39
-2.46
-0.51
-4.09
-6.57
-7.34
-7.95
-8.61
-9.21
-9.68
-10.19
-10.65
-11.03
-11.46
-11.75
-12.13
-12.29
-12.47
-12.77
-12.86
-13.06
-13.24
-13.74
-14.06
-14.18
-14.33
-14.41
-14.39
-11.69
-11.83
-11.99
-12.28
-12.75
5
MGA-725M4 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vd = 3.0V, Id = 5 mA, ZO = 50Ω (test circuit of Figure 2)
Freq
(GHz)
S11
Mag.
S11
Ang.
S21
Mag.
S21
Ang.
S12
Mag.
S12
Ang.
S22
Mag.
S22
Ang.
S21
(dB)
RLin
(dB)
RLout
(dB)
Gmax
(dB)
Isolation
(dB)
0.10
0.50
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
0.83
0.73
0.71
0.71
0.69
0.69
0.68
0.67
0.67
0.66
0.66
0.66
0.66
0.65
0.65
0.65
0.64
0.64
0.64
0.64
0.63
0.62
0.61
0.60
0.60
0.59
0.57
0.58
0.56
0.53
0.54
-8
-24
-35
-39
-42
-45
-49
-52
-55
-59
-62
-65
-68
-71
-74
-77
-80
-82
-85
-88
-100
-112
-123
-133
-142
-151
-160
-162
-174
175
170
4.17
4.32
4.19
4.14
4.09
4.03
3.99
3.94
3.89
3.83
3.79
3.74
3.69
3.63
3.58
3.54
3.50
3.43
3.39
3.35
3.12
2.91
2.72
2.55
2.40
2.27
2.15
1.93
1.88
1.83
1.77
175
164
156
153
151
148
146
143
141
139
136
134
132
130
127
125
123
121
119
117
107
98
90
82
74
67
59
49
46
40
34
0.05
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.10
0.10
0.11
0.12
0.12
0.13
0.13
0.14
0.14
0.14
0.14
0.15
0.15
20
13
18
19
20
22
23
23
24
25
25
26
26
26
26
26
27
26
26
26
24
22
20
18
15
13
9
7
5
3
1
0.58
0.51
0.51
0.50
0.50
0.50
0.50
0.50
0.50
0.50
0.49
0.49
0.49
0.49
0.49
0.48
0.48
0.48
0.47
0.47
0.46
0.44
0.43
0.42
0.40
0.39
0.38
0.38
0.36
0.36
0.35
-7
-13
-19
-21
-23
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
-46
-48
-50
-52
-54
-62
-70
-78
-85
-91
-97
-109
-123
-128
-133
-134
12.4
12.7
12.4
12.3
12.2
12.1
12.0
11.9
11.8
11.7
11.6
11.5
11.3
11.2
11.1
11.0
10.9
10.7
10.6
10.5
9.9
9.3
8.7
8.1
7.6
7.1
6.6
5.7
5.5
5.2
4.9
-1.6
-2.7
-3.0
-3.0
-3.2
-3.3
-3.4
-3.5
-3.5
-3.6
-3.6
-3.7
-3.7
-3.7
-3.8
-3.8
-3.8
-3.9
-3.9
-3.9
-4.0
-4.2
-4.3
-4.4
-4.5
-4.6
-4.9
-4.8
-5.0
-5.5
-5.4
-4.7
-5.8
-5.9
-6.0
-6.0
-6.0
-6.0
-6.0
-6.1
-6.1
-6.2
-6.2
-6.2
-6.3
-6.3
-6.4
-6.5
-6.4
-6.5
-6.6
-6.8
-7.1
-7.4
-7.6
-7.9
-8.2
-8.4
-8.5
-8.8
-8.9
-9.1
18.7
16.6
16.5
16.6
16.5
16.7
16.7
17.4
17.3
17.1
16.9
16.7
16.5
16.4
16.2
16.0
15.9
15.7
15.5
15.4
14.7
14.0
13.5
13.0
12.6
12.2
11.8
11.0
10.0
8.9
8.6
-25.8
-24.4
-24.0
-23.9
-23.6
-23.3
-23.2
-23.0
-22.7
-22.5
-22.2
-21.9
-21.7
-21.5
-21.3
-21.1
-20.9
-20.6
-20.4
-20.3
-19.5
-18.8
-18.3
-17.9
-17.5
-17.2
-17.0
-17.3
-16.9
-16.6
-16.4
Freq
(GHz)
NFmin
(dB)
GAMMA
Mag
OPT
Ang
Rn
Ga
(dB)
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
1.24
1.26
1.34
1.42
1.45
1.48
1.53
1.56
1.58
1.58
1.58
1.61
1.63
1.69
1.69
1.74
1.80
1.81
1.89
0.40
0.40
0.36
0.33
0.30
0.29
0.26
0.24
0.23
0.24
0.23
0.23
0.23
0.24
0.26
0.26
0.27
0.28
0.32
30
34
42
53
58
62
61
62
68
69
69
76
84
101
108
122
134
144
156
16.5
14.5
13.9
13.0
12.6
12.3
11.9
11.6
11.3
11.4
10.9
10.7
10.1
9.5
9.1
8.8
7.8
7.2
6.4
16.0
15.3
15.0
14.4
14.0
13.8
13.3
13.2
13.0
12.9
12.8
12.6
12.1
11.5
11.0
10.3
9.8
9.3
8.7
6
MGA-725M4 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vd = 3.0V, Id = 10 mA, ZO = 50Ω (test circuit of Figure 2)
Freq
(GHz)
S11
Mag.
S11
Ang.
S21
Mag.
S21
Ang.
S12
Mag.
S12
Ang.
S22
Mag.
S22
Ang.
S21
(dB)
RLin
(dB)
RLout
(dB)
Gmax
(dB)
Isolation
(dB)
0.10
0.50
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
0.79
0.68
0.65
0.66
0.64
0.64
0.63
0.63
0.62
0.62
0.62
0.61
0.61
0.61
0.60
0.60
0.60
0.60
0.59
0.59
0.59
0.58
0.57
0.57
0.57
0.56
0.55
0.55
0.54
0.50
0.51
-9
-26
-39
-43
-46
-50
-54
-58
-61
-64
-68
-71
-74
-77
-81
-84
-87
-89
-92
-95
-108
-119
-130
-140
-149
-157
-166
-172
-179
170
164
5.57
5.68
5.47
5.40
5.33
5.25
5.18
5.10
5.03
4.95
4.88
4.81
4.73
4.65
4.58
4.51
4.45
4.36
4.29
4.23
3.91
3.62
3.36
3.13
2.93
2.76
2.58
2.30
2.25
2.19
2.09
174
163
154
152
149
147
144
142
139
137
134
132
130
128
125
123
121
119
117
115
105
96
88
80
73
66
57
48
45
39
33
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.10
0.10
0.11
0.11
0.11
0.11
0.12
0.13
0.13
19
13
16
18
19
20
21
21
22
23
23
23
24
24
24
24
24
24
24
24
23
23
22
21
20
20
17
17
17
16
15
0.48
0.40
0.39
0.39
0.39
0.39
0.38
0.38
0.38
0.38
0.38
0.37
0.37
0.37
0.37
0.37
0.36
0.36
0.36
0.36
0.35
0.34
0.34
0.33
0.33
0.32
0.32
0.32
0.31
0.31
0.31
-9
-15
-21
-24
-26
-28
-31
-33
-35
-37
-39
-42
-44
-46
-48
-50
-51
-54
-55
-57
-66
-73
-81
-88
-94
-100
-113
-122
-133
-137
-139
14.9
15.1
14.8
14.6
14.5
14.4
14.3
14.2
14.0
13.9
13.8
13.6
13.5
13.4
13.2
13.1
13.0
12.8
12.7
12.5
11.8
11.2
10.5
9.9
9.3
8.8
8.2
7.2
7.0
6.8
6.4
-2.0
-3.4
-3.7
-3.7
-3.9
-3.9
-4.1
-4.1
-4.2
-4.2
-4.2
-4.3
-4.3
-4.3
-4.4
-4.4
-4.5
-4.5
-4.5
-4.5
-4.6
-4.7
-4.8
-4.9
-5.0
-5.1
-5.1
-5.3
-5.4
-6.0
-5.8
-6.4
-8.1
-8.2
-8.2
-8.3
-8.3
-8.3
-8.4
-8.4
-8.4
-8.5
-8.5
-8.6
-8.6
-8.7
-8.7
-8.8
-8.8
-8.8
-8.9
-9.1
-9.3
-9.5
-9.6
-9.8
-9.9
-9.9
-9.9
-10.1
-10.1
-10.1
20.7
18.2
17.9
18.0
17.8
17.8
17.8
17.9
17.9
18.2
18.6
18.4
18.2
18.0
17.9
17.7
17.6
17.5
17.3
17.2
16.5
15.9
15.4
14.9
14.4
14.0
12.5
10.5
10.3
9.6
9.3
-26.6
-25.4
-24.9
-24.7
-24.6
-24.4
-24.2
-24.0
-23.7
-23.5
-23.3
-23.1
-23.0
-22.7
-22.6
-22.4
-22.3
-22.2
-21.9
-21.8
-21.2
-20.6
-20.3
-19.9
-19.5
-19.2
-18.9
-19.1
-18.4
-17.9
-17.5
Freq
(GHz)
NFmin
(dB)
GAMMA
Mag
OPT
Ang
Rn
Ga
(dB)
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
1.20
1.20
1.24
1.28
1.30
1.31
1.34
1.36
1.38
1.40
1.40
1.40
1.42
1.47
1.50
1.54
1.61
1.64
1.72
0.35
0.35
0.34
0.29
0.26
0.24
0.20
0.19
0.19
0.19
0.18
0.18
0.19
0.20
0.22
0.23
0.23
0.25
0.29
36
39
48
60
64
68
66
68
74
76
75
83
91
109
117
130
144
153
167
14.5
11.9
11.5
10.5
10.2
10.1
9.5
9.1
9.0
9.0
8.7
8.6
8.1
7.7
7.3
7.2
6.6
6.1
5.7
17.5
16.6
16.5
15.9
15.4
15.3
14.6
14.4
14.2
14.2
13.9
13.9
13.4
12.6
12.1
11.4
10.9
10.4
9.8
7
MGA-725M4 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vd = 3.0 V, Id = 20 mA, ZO = 50Ω (test circuit of Figure 2)
Freq
(GHz)
S11
Mag.
S11
Ang.
S21
Mag.
S21
Ang.
S12
Mag.
S12
Ang.
S22
Mag.
S22
Ang.
S21
(dB)
RLin
(dB)
RLout
(dB)
Gmax
(dB)
Isolation
(dB)
0.1
0.5
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
0.75
0.62
0.60
0.60
0.59
0.58
0.58
0.57
0.57
0.57
0.57
0.56
0.56
0.56
0.56
0.55
0.55
0.55
0.55
0.55
0.54
0.54
0.53
0.53
0.52
0.52
0.51
0.50
0.49
0.46
0.47
-11
-28
-42
-46
-50
-54
-58
-62
-65
-69
-72
-76
-79
-82
-86
-89
-92
-95
-98
-100
-113
-125
-135
-145
-153
-162
-169
-176
178
166
161
6.78
6.81
6.53
6.44
6.34
6.24
6.14
6.05
5.95
5.85
5.75
5.66
5.56
5.46
5.36
5.27
5.19
5.08
4.99
4.91
4.51
4.15
3.84
3.56
3.33
3.12
2.91
2.58
2.54
2.47
2.35
174
162
153
151
148
145
143
140
138
135
133
130
128
126
124
122
119
117
115
113
104
95
87
79
72
65
57
49
45
39
33
0.04
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.09
0.09
0.10
0.10
0.10
0.11
0.12
0.12
12
12
16
17
18
19
20
21
21
22
23
23
23
23
24
24
24
24
24
24
24
24
24
24
24
24
24
24
24
24
23
0.39
0.30
0.30
0.30
0.30
0.30
0.29
0.29
0.29
0.29
0.29
0.29
0.28
0.28
0.28
0.28
0.28
0.28
0.28
0.27
0.27
0.26
0.26
0.26
0.26
0.26
0.26
0.26
0.26
0.27
0.27
-11
-16
-23
-26
-28
-31
-33
-36
-38
-40
-42
-45
-47
-49
-51
-53
-55
-57
-58
-60
-68
-76
-83
-89
-95
-100
-114
-124
-135
-134
-138
16.6
16.7
16.3
16.2
16.0
15.9
15.8
15.6
15.5
15.3
15.2
15.0
14.9
14.7
14.6
14.4
14.3
14.1
14.0
13.8
13.1
12.4
11.7
11.0
10.4
9.9
9.3
8.2
8.1
7.9
7.4
-2.5
-4.1
-4.4
-4.4
-4.6
-4.7
-4.8
-4.8
-4.9
-4.9
-4.9
-5.0
-5.0
-5.0
-5.1
-5.1
-5.1
-5.2
-5.2
-5.2
-5.3
-5.4
-5.5
-5.6
-5.6
-5.8
-5.8
-6.0
-6.2
-6.8
-6.6
-8.1
-10.4
-10.5
-10.5
-10.6
-10.6
-10.6
-10.7
-10.7
-10.8
-10.8
-10.9
-10.9
-11.0
-11.0
-11.1
-11.2
-11.2
-11.2
-11.2
-11.4
-11.6
-11.6
-11.7
-11.8
-11.8
-11.6
-11.7
-11.6
-11.4
-11.3
20.8
19.1
18.7
18.8
18.6
18.5
18.4
18.4
18.3
18.2
18.2
18.1
18.0
18.0
17.9
17.8
17.7
17.5
17.4
17.3
16.6
15.7
14.9
14.1
13.4
12.7
12.0
10.6
10.4
9.9
9.6
-27.1
-26.2
-25.8
-25.7
-25.5
-25.4
-25.0
-24.9
-24.7
-24.6
-24.3
-24.2
-24.0
-23.9
-23.6
-23.5
-23.3
-23.2
-23.1
-23.0
-22.4
-21.9
-21.5
-21.1
-20.7
-20.4
-19.9
-19.6
-19.4
-18.8
-18.3
Freq
(GHz)
NFmin
(dB)
GAMMA
Mag
OPT
Ang
Rn
Ga
(dB)
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
1.16
1.18
1.19
1.19
1.24
1.26
1.28
1.31
1.31
1.31
1.32
1.33
1.32
1.36
1.40
1.43
1.51
1.55
1.62
0.34
0.33
0.32
0.28
0.23
0.22
0.18
0.17
0.15
0.16
0.16
0.16
0.18
0.18
0.20
0.22
0.23
0.25
0.29
40
46
50
60
69
73
72
75
81
83
81
89
97
116
123
136
150
158
172
12.1
12.0
11.5
10.7
10.0
9.6
9.8
9.3
9.2
9.1
8.9
8.7
8.3
8.1
7.9
7.9
7.7
7.6
7.7
18.0
17.6
17.6
16.6
16.0
15.8
15.7
15.4
15.2
15.1
14.9
14.8
14.2
13.5
12.8
12.2
11.6
11.1
10.6
8
MGA-725M4 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vd = 3.0 V, Id = 40 mA, ZO = 50Ω (test circuit of Figure 2)
Freq
(GHz)
S11
Mag.
S11
Ang.
S21
Mag.
S21
Ang.
S12
Mag.
S12
Ang.
S22
Mag.
S22
Ang.
S21
(dB)
RLin
(dB)
RLout
(dB)
Gmax
(dB)
Isolation
(dB)
0.1
0.5
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
0.75
0.62
0.60
0.60
0.59
0.58
0.58
0.57
0.57
0.57
0.57
0.56
0.56
0.56
0.56
0.55
0.55
0.55
0.55
0.55
0.54
0.54
0.53
0.53
0.52
0.52
0.51
0.50
0.49
0.46
0.47
-11
-29
-43
-47
-51
-55
-60
-63
-67
-71
-74
-78
-81
-85
-88
-91
-94
-97
-100
-103
-115
-127
-137
-147
-155
-164
-172
-176
177
165
160
7.39
7.38
7.06
6.95
6.84
6.73
6.62
6.51
6.40
6.29
6.18
6.07
5.96
5.85
5.74
5.64
5.54
5.43
5.34
5.24
4.79
4.40
4.06
3.77
3.52
3.30
3.06
2.73
2.69
2.61
2.49
173
162
153
150
147
145
142
140
137
135
132
130
128
125
123
121
119
117
115
113
103
95
87
79
72
65
57
49
46
40
34
0.04
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.08
0.08
0.08
0.09
0.09
0.09
0.10
0.11
0.12
18
11
15
16
17
18
19
20
21
22
22
23
23
24
24
24
24
25
25
25
26
26
26
27
27
28
27
25
28
28
27
0.35
0.26
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.24
0.24
0.24
0.24
0.24
0.24
0.23
0.24
0.24
0.23
0.23
0.23
0.23
0.23
0.23
0.23
0.23
0.23
0.23
0.24
0.25
-12
-16
-23
-26
-28
-31
-33
-36
-38
-40
-42
-45
-47
-49
-51
-53
-54
-56
-58
-60
-67
-74
-81
-86
-91
-96
-112
-125
-132
-130
-134
17.4
17.4
17.0
16.8
16.7
16.6
16.4
16.3
16.1
16.0
15.8
15.7
15.5
15.3
15.2
15.0
14.9
14.7
14.5
14.4
13.6
12.9
12.2
11.5
10.9
10.4
9.7
8.7
8.6
8.3
7.9
-2.5
-4.1
-4.4
-4.4
-4.6
-4.7
-4.8
-4.8
-4.9
-4.9
-4.9
-5.0
-5.0
-5.0
-5.1
-5.1
-5.1
-5.2
-5.2
-5.2
-5.3
-5.4
-5.5
-5.6
-5.6
-5.8
-5.8
-6.0
-6.2
-6.8
-6.6
-9.2
-11.8
-12.0
-12.0
-12.0
-12.1
-12.1
-12.1
-12.2
-12.2
-12.3
-12.3
-12.4
-12.4
-12.4
-12.5
-12.6
-12.6
-12.6
-12.7
-12.8
-12.9
-12.9
-13.0
-12.9
-12.9
-12.7
-12.7
-12.6
-12.3
-12.1
22.1
19.8
19.4
19.4
19.1
19.0
18.9
18.8
18.7
18.6
18.5
18.4
18.3
18.2
18.1
17.9
17.7
17.6
17.4
17.3
16.6
15.7
14.9
14.2
13.5
12.8
12.2
10.8
10.7
10.2
9.9
-27.7
-26.7
-26.6
-26.4
-26.2
-26.0
-25.8
-25.7
-25.5
-25.4
-25.2
-25.0
-24.9
-24.6
-24.4
-24.3
-24.3
-24.2
-24.0
-23.9
-23.2
-22.7
-22.4
-21.9
-21.5
-21.1
-20.7
-20.8
-19.9
-19.3
-18.7
Freq
(GHz)
NFmin
(dB)
GAMMA
Mag
OPT
Ang
Rn
Ga
(dB)
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
1.23
1.24
1.27
1.28
1.32
1.32
1.37
1.40
1.40
1.40
1.40
1.42
1.43
1.47
1.51
1.56
1.65
1.64
1.77
0.36
0.35
0.35
0.28
0.25
0.24
0.22
0.20
0.21
0.20
0.20
0.20
0.22
0.22
0.24
0.25
0.26
0.29
0.32
33
42
50
63
68
72
72
74
79
82
81
88
97
115
124
138
151
160
173
14.7
12.4
11.5
10.3
10.1
9.9
9.4
9.2
9.1
9.0
8.7
8.6
8.0
7.5
7.0
6.7
6.1
5.6
5.3
19.0
18.2
18.2
17.3
16.7
16.4
16.2
16.0
15.8
15.7
15.5
15.4
14.7
14.0
13.3
12.7
12.1
11.6
11.1
9
MGA-725M4 Typical Scattering Parameters and Noise Parameters
TC = 25°C, Vd = 3.0 V, Id = 60 mA, ZO = 50Ω (test circuit of Figure 2)
Freq
(GHz)
S11
Mag.
S11
Ang.
S21
Mag.
S21
Ang.
S12
Mag.
S12
Ang.
S22
Mag.
S22
Ang.
S21
(dB)
RLin
(dB)
RLout
(dB)
Gmax
(dB)
Isolation
(dB)
0.1
0.5
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
0.76
0.64
0.61
0.62
0.60
0.60
0.59
0.59
0.58
0.58
0.58
0.58
0.57
0.57
0.57
0.57
0.57
0.57
0.56
0.56
0.56
0.55
0.54
0.54
0.54
0.53
0.52
0.51
0.50
0.47
0.48
-11
-29
-42
-47
-50
-55
-59
-63
-66
-70
-73
-77
-80
-84
-87
-90
-93
-96
-99
-102
-115
-126
-137
-146
-155
-163
-171
-177
177
165
161
7.09
7.08
6.78
6.69
6.58
6.48
6.38
6.28
6.17
6.07
5.96
5.86
5.76
5.66
5.56
5.46
5.36
5.26
5.17
5.07
4.65
4.27
3.95
3.67
3.42
3.21
2.98
2.66
2.63
2.55
2.43
174
162
153
151
148
145
143
140
137
135
133
130
128
126
123
121
119
117
115
113
103
95
87
79
72
65
57
49
45
39
33
0.04
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.08
0.08
0.08
0.09
0.09
0.10
0.10
0.11
17
10
14
15
17
18
19
19
20
21
21
22
22
23
23
24
24
24
24
24
25
26
26
27
28
29
28
27
30
30
30
0.35
0.26
0.26
0.26
0.26
0.26
0.26
0.26
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.24
0.24
0.24
0.24
0.24
0.24
0.24
0.24
0.24
0.24
0.24
0.25
0.24
0.25
0.26
-11
-15
-21
-24
-26
-28
-31
-33
-35
-37
-39
-41
-43
-45
-47
-48
-50
-52
-53
-55
-62
-69
-75
-80
-85
-90
-106
-118
-125
-130
-127
17.0
17.0
16.6
16.5
16.4
16.2
16.1
16.0
15.8
15.7
15.5
15.4
15.2
15.1
14.9
14.7
14.6
14.4
14.3
14.1
13.3
12.6
11.9
11.3
10.7
10.1
9.5
8.5
8.4
8.1
7.7
-2.4
-3.9
-4.2
-4.2
-4.4
-4.5
-4.6
-4.6
-4.7
-4.7
-4.7
-4.8
-4.8
-4.8
-4.9
-4.9
-5.0
-5.0
-5.0
-5.0
-5.1
-5.2
-5.3
-5.4
-5.4
-5.5
-5.7
-5.8
-6.0
-6.6
-6.4
-9.1
-11.6
-11.7
-11.8
-11.8
-11.8
-11.8
-11.9
-11.9
-11.9
-12.0
-12.0
-12.1
-12.1
-12.1
-12.2
-12.3
-12.3
-12.3
-12.3
-12.5
-12.5
-12.6
-12.6
-12.5
-12.5
-12.4
-12.1
-12.4
-12.0
-11.8
21.7
19.5
19.1
19.0
18.8
18.7
18.6
18.5
18.3
18.2
18.1
18.0
17.9
17.8
17.7
17.5
17.4
17.2
17.1
17.0
16.2
15.4
14.6
13.9
13.3
12.7
11.9
10.7
10.5
10.0
9.8
-28.0
-26.9
-26.7
-26.6
-26.4
-26.4
-26.2
-26.0
-25.8
-25.7
-25.5
-25.4
-25.2
-25.0
-24.9
-24.7
-24.6
-24.4
-24.3
-24.2
-23.7
-23.2
-22.9
-22.4
-22.0
-21.6
-21.2
-21.3
-20.4
-19.7
-19.2
Freq
(GHz)
NFmin
(dB)
GAMMA
Mag
OPT
Ang
Rn
Ga
(dB)
0.8
0.9
1.0
1.5
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
1.47
1.47
1.51
1.55
1.56
1.59
1.62
1.65
1.66
1.67
1.67
1.70
1.70
1.76
1.83
1.90
2.00
2.05
2.19
0.38
0.38
0.38
0.34
0.31
0.30
0.29
0.28
0.28
0.27
0.27
0.27
0.27
0.29
0.31
0.32
0.34
0.36
0.39
42
48
49
60
64
68
69
71
76
78
79
84
96
113
124
137
150
159
173
19.0
17.8
17.3
16.1
14.9
14.6
14.4
14.3
14.2
14.1
13.9
13.6
12.9
12.7
12.4
12.2
11.8
11.7
11.6
18.8
18.2
18.1
17.4
17.0
16.8
16.2
16.0
15.8
15.7
15.5
15.4
14.7
14.0
13.4
12.7
12.2
11.7
11.2
10
MGA-725M4 Typical Scattering Parameters— Zero Bias
TC = 25°C, Vd = 0V, Id = 0 mA, ZO = 50Ω (test circuit of Figure 2)
Freq
(GHz)
S11
Mag.
S11
Ang.
S21
Mag.
S21
Ang.
S12
Mag.
S12
Ang.
S22
Mag.
S22
Ang.
S21
(dB)
RLin
(dB)
RLout
(dB)
Isolation
(dB)
0.1
0.5
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
3.8
4.0
4.4
4.8
5.2
5.6
6.0
0.07
0.31
0.42
0.52
0.58
0.62
0.64
0.66
0.67
0.69
0.69
0.69
0.70
0.71
0.72
0.72
0.72
-116
-136
-143
-154
-163
-170
-176
178
173
168
166
163
159
154
150
145
142
0.04
0.06
0.07
0.09
0.09
0.10
0.11
0.11
0.12
0.12
0.12
0.13
0.13
0.14
0.15
0.16
0.16
10
28
30
28
26
24
24
23
23
23
23
23
22
22
22
20
17
0.04
0.06
0.07
0.09
0.09
0.10
0.11
0.11
0.12
0.12
0.13
0.13
0.13
0.14
0.15
0.16
0.16
10
29
30
28
26
25
24
23
23
23
23
23
23
22
22
21
17
0.83
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.84
0.84
0.84
0.84
0.83
0.83
179
176
174
171
168
165
162
159
156
153
151
149
146
143
139
135
135
-27.3
-24.7
-22.9
-21.4
-20.5
-20.0
-19.5
-19.2
-18.7
-18.3
-18.1
-17.9
-17.5
-17.0
-16.5
-16.0
-15.7
-23.2
-10.2
-7.5
-5.6
-4.7
-4.2
-3.8
-3.6
-3.4
-3.3
-3.2
-3.2
-3.1
-3.0
-2.9
-2.8
-2.9
-1.6
-1.4
-1.4
-1.4
-1.4
-1.4
-1.4
-1.4
-1.4
-1.5
-1.5
-1.5
-1.5
-1.5
-1.5
-1.6
-1.6
-27.3
-24.7
-22.9
-21.4
-20.5
-19.9
-19.5
-19.1
-18.7
-18.3
-18.1
-17.9
-17.5
-17.0
-16.5
-16.0
-15.7
Ordering Information
Part Number
Devices Per Container
Container
MGA-725M4-TR1
3000
7” Reel
MGA-725M4-TR2
10000
13”Reel
MGA-725M4-BLK
100
antistatic bag
MiniPak Package Outline Drawing
1.47 (0.058)
1.37 (0.054)
1.23 (0.048)
1.13 (0.044)
Top View
0.60 (0.024) MAX
0.50 (0.020) MAX
11
Solder Pad Dimensions
Package 4T — MiniPak 1412
Device Orientation
REEL
END VIEW
TOP VIEW
4 mm
AA
AA
AA
USER
FEED
DIRECTION
AA
8 mm
CARRIER
TAPE
Note: “AA” represents package marking code. Package
marking is right side up with carrier tape perforations at
top. Conforms to Electronic Industries RS-481, “Taping of
Surface Mounted Components for Automated Placement.”
Standard quantity is 3,000 devices per reel.
COVER TAPE
Tape Dimensions
For Outline 4T
P
P2
D
P0
E
F
C
D1
t1 (CARRIER TAPE THICKNESS)
K0
5q MAX.
5q MAX.
A0
DESCRIPTION
12
T t (COVER TAPE THICKNESS)
B0
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
1.40 r
1.63 r
0.80 r
4.00 r
0.80 r
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.50 r 0.10
4.00 r 0.10
1.75 r 0.10
0.060 r 0.004
0.157 r 0.004
0.069 r 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 + 0.30 - 0.10
0.254 r 0.02
0.315 + 0.012 - 0.004
0.010 r 0.001
COVER TAPE
WIDTH
TAPE THICKNESS
C
Tt
5.40 r 0.10
0.062 r 0.001
0.213 r 0.004
0.002 r 0.00004
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 r 0.05
0.138 r 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 r 0.05
0.079 r 0.002
0.05
0.05
0.05
0.10
0.05
0.055 r
0.064 r
0.031 r
0.157 r
0.031 r
0.002
0.002
0.002
0.004
0.002
W
Application Information: Designing with the
MGA-725M4 RFIC Amplifier/Bypass Switch
Description
The MGA-725M4 is a single stage GaAs RFIC amplifier
with an integrated bypass switch. A functional diagram
of the MGA-725M4 is shown in Figure 1.
RF
INPUT
BYPASS MODE
RF
OUTPUT
AMPLIFIER
Figure 1. MGA-725M4 Functional Diagram.
The MGA-725M4 is designed for receivers and transmitters operating from 100 MHz to 6 GHz with an emphasis
on 800 MHz and 1.9 GHz CDMA applications. The MGA725M4 combines low noise performance with high
linearity to make it especially advantageous for use in
receiver front-ends.
The purpose of the switch feature is to prevent distortion of high signal levels in receiver applications by
bypassing the amplifier altogether. The bypass switch
can be thought of as a 1-bit digital AGC circuit that not
only prevents distortion by bypassing the MGA-725M4
amplifier, but also reduces front-end system gain by
approximately 16 dB to avoid overdriving subsequent
stages in the receiver such as the mixer.
An additional feature of the MGA-725M4 is the ability to
externally set device current to balance output power capability and high linearity with low DC power consumption. The adjustable current feature of the MGA-725M4
allows it to deliver output power levels in excess of +15
dBm (P1dB), thus extending its use to other system application such as transmitter driver stages.
The MGA-725M4 is designed to operate from a +3-volt
power supply and is contained in miniature Minipak 1412
package to minimize printed circuit board space.
LNA Application
For low noise amplifier applications, the MGA-725M4 is
typically biased in the 10–20 mA range. Minimum NF
occurs at 20 mA as noted in the performance curve of
NFmin vs Id. Biasing at currents significantly less than 10
mA is not recommended since the characteristics of the
device begin to change very rapidly at lower currents.
The MGA-725M4 is matched internally for low NF. Over a
current range of 10–30 mA, the magnitude of Gopt at 1900
MHz is typically less than 0.25 and additional impedance
matching would only net about 0.1 dB improvement in
noise figure.
13
Without external matching, the input return loss for
the MGA-725M4 is approximately 5 dB at 1900 MHz. If
desired, a small amount of NF can be traded off for a
significant improvement in input match. For example,
the addition of a series inductance of 2.7 to 3.9 nH at the
input of the MGA-725M4 will improve the input return
loss to grater than 10 dB with a sacrifice in NF of only
0.1 dB.
The output of the MGA-725M4 is internally matched to
provide an output SWR of approximately 2:1 at 1900
MHz. Input and output matches both improve at higher
frequencies.
Driver Amplifier Applications
The flexibility of the adjustable current feature makes the
MGA-725M4 suitable for use in transmitter driver stages.
Biasing the amplifier at 40–50 mA enables it to deliver
an output power at 1 dB gain compression of up to +16
dBm. Power efficiency in the unsaturated driver mode is
on the order of 30%. If operated as a saturated amplifier,
both output power and efficiency will increase.
Since the MGA-725M4 is internally matched for low noise
figure, it may be desirable to add external impedance
matching at the input to improve the power match for
driver applications. Since the reactive part of the input of
the device impedance is capacitive, a series inductor at
the input is often all that is needed to provide a suitable
match for many applications. For 1900 MHz circuits, a
series inductance of 3.9 nH will match the input to return
loss of approximately 13 dB. As in the case of low noise
bias levels, the output of the MGA-725M4 is already well
matched to 50Ω and no additional matching is needed
for most applications.
When used for driver stage applications, the bypass
switch feature of the MGA-725M4 can be used to shut
down the amplifier to conserve supply current during
non-transmit period. Supply current in the bypass stage
is nominally 2 mA.
Biasing
Biasing the MGA-725M4 is similar to biasing a discrete
GaAs FET. Passive biasing of the MGA-725M4 may be
accomplished by either of two conventional methods,
either by biasing the gate or by using a source resistor.
Gate Bias
Using this method, Pins 1 and 3 of the amplifier are DC
grounded and a negative bias voltage is applied to Pin 2
as shown in figure 2. This method has the advantage of
not only DC, but also RF grounding both of the ground
pins of the MGA-725M4. Direct RF grounding of device’s
ground pins results in slightly improved performance
while decreasing potential instabilities, especially at
higher frequencies. The disadvantage is that a negative
supply voltage is required.
OUTPUT
& Vd
INPUT
INPUT
2
4
1
OUTPUT
& Vd
3
Rbias
Vref
Figure 2. Gate Bias Method.
Figure 4. Source Resistor Bias.
DC access to the input terminal for applying the gate
bias voltage can be made through either a RF or high
impedance transmission line as indicated in Figure 2.
A simple method recommended for DC grounding the
input terminal is to merely add a resistor from Pin 2 to
ground, as shown in Figure 4. The value of the shunt R
can be comparatively high since the only voltage drop
across it is due to minute leakage currents that in the mA
range. A value of 1kΩ would adequately DC ground the
input while loading the RF signal by only 0.2 dB loss. A
plot of typical Id vs Rbias is shown in Figure 5.
The device current, Id, is determined by the voltage at Vref
(Pin 2) with respect to ground. A plot of typical Id vs Vref
is shown in Figure 3. Maximum device current (approximately 65 mA) occurs at Vref = 0.
The device current may also be estimated from the
following equation:
60
50
where Id is in mA and Vref is in volts.
40
Id (mA)
Vref = 0.11Id – 0.96
50
30
20
40
Id (mA)
10
30
0
0
20
40
20
100
120
140
Figure 5. Device Current vs. Rbias.
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
Vref (V)
Figure 3. Device Current vs. Vref.
The gate bias method would not normally be used unless
a negative supply voltage was readily available. For
reference, this is the method used in the characterization
test circuits shown in Figures 1 and 2 of the MGA-725M4
data sheet.
Source Resistor Bias
The source resistor method is the simplest way of biasing
the MGA-725M4 using a single, positive supply voltage.
This method, shown in Figure 4, places the RF input at DC
ground and requires both of the device grounds to be RF
bypassed. Device current, Id, is determined by the value
of the source resistance, Rbias, between either Pin 1 and
Pin 3 of the MGA-725M4 and DC ground. Pin 1 and Pin
3 are connected internally in the RFIC. Maximum device
current (approximately 65 mA) occurs for Rbias= 0Ω.
14
80
Rbias ( )
10
0
-0.8
60
The approximate value of the external resistor, Rbias, may
also be calculated from:
Rbias = 964 (1 – 0.112  Id)
Id
where Rbias is in ohms and Id is the desired device current
in mA. The source resistor technique is the preferred and
most common method of biasing the MGA-725M4.
Adaptive Biasing
For applications in which input power levels vary over
a wide range, it may be useful to dynamically adapt the
bias of the MGA-725M4 to match the signal level. This
involves sensing the signal level at some point in the
system and automatically adjusting the bias current of
the amplifier accordingly. The advantage of adaptive
biasing is conservation of supply current (longer battery
life) by using only the amount of current necessary to
handle the input signal without distortion.
Adaptive biasing of the MGA-725M4 can be accomplished
by either analog or digital means. For the analog control
case, an active current source (discrete device or IC) is
used in lieu of the source bias resistor. For simple digital
control, electronic switches can be used to control the
value of the source resistor in discrete increments. Both
methods of adaptive biasing are depicted in Figure 6.
Vd = +2.5 V
RFC
Applying the Device Voltage
RF
Output
Common to all methods of biasing, voltage Vd is applied
to the MGA-725M4 through the RF Output connection
(Pin 4). A RF choke is used to isolate the RF signal from the
DC supply. The bias line is capacitively bypassed to keep
RF from the DC supply lines and prevent resonant dips or
peaks in the response of the amplifier. Where practical, it
may be cost effective to use a length of high impedance
transmission line (Preferably  /4) in place of the RFC.
RF
Input
Rbias
Figure 8. DC Schematic of Source Resistor Biasing.
A DC blocking capacitor at the output of the RFIC isolates
the supply voltage from succeeding circuits. If the source
resistor method of biasing is used, the RF input terminal
of the MGA-725M4 is at DC ground potential and a
blocking capacitor is not required unless the input is
connected directly to a preceding stage that has a DC
voltage present.
When using the gate bias method, the overall device
voltage is equal to the sum of Vref at Pin 2 and voltage Vd
at Pin 4. As an example, to bias the device at the typical
operating voltage of 3 volts, Vd would be set to 2.5 volts
for a Vref of -0.5 volts. Figure 7 shows a DC schematic of a
gate bias circuit.
Just as for the gate bias method, the overall device
voltage for source resistor biasing is equal to Vref + Vd.
Since Vref is zero when using a source resistor, Vd is the
same as the device operating voltage, typically 3 volts. A
source resistor bias circuit is shown in Figure 8.
Biasing for Higher Linearity or Output Power
While the MGA-725M4 is designed primarily for use up
to 50 mA in 3 volt applications, the output power can be
increased by using higher currents and/or higher supply
voltages. If higher bias levels are used, appropriate
caution should be observed for both the thermal limits
and the Absolute Maximum Ratings.
Vd = +2.5 V
RFC
As a guideline for operation at higher bias levels, the
Maximum Operating conditions shown in the data sheet
table of Absolute Maximum Ratings should be followed.
This set of conditions is the maximum combination of
bias voltage, bias current, and device temperature that is
recommended for reliable operation. Note: In contrast to
Absolute Maximum Ratings, in which exceeding may one
parameter may result in damage to the device, all of the
Maximum Operating conditions may reliably be applied
to the MGA-725M4 simultaneously.
RF
Output
RF
Input
Vref = 0 5 V
Figure 7. DC Schematic for Gate Bias.
Input
2
4
1
Output
& Vd
Input
2
3
2
1
3
Analog Control
Analog
Control
Vref
Vref
(a) Analog
Figure 6. Adaptive Bias Control.
15
Output
& Vd
(b) Digital
Controlling the Switch
The state of the MGA-725M4 (amplifier or bypass
mode) is controlled by the device current. For device
currents greater than 5 mA, the MGA-725M4 functions
as an amplifier. If the device current is set to zero, the
MGA-725M4 is switched into bypass mode in which the
amplifier is turned off and the signal is routed around the
amplifier with a loss of approximately 2.5 dB.
The bypass state is normally engaged in the presence of
high input levels to prevent distortion of the signal that
might occur in the amplifier. In the bypass state the input
TOI is very high, typically +39 dBm at 1900 MHz.
The simplest method of placing the MGA-725M4 into
the bypass mode is to open-circuit the ground terminals
at Pins 1 and 3. With the ground connection open, the
internal control circuit of the MGA-725M4 auto-switches
from the amplifier mode into a bypass state and the
device current drops to near zero. Nominal current in the
bypass state is 2 μA with a maximum of 15 μA.
Input
2
4
1
Output & Vd
3
Rbias
Bypass Switch
Enable
Figure 9. MGA-725M4 Amplifier/Bypass State Switching.
An electronic switch can be used to control states as
shown in Figure 9. The control switch could be implemented with either a discrete transistor or simple IC.
The speed at which the MGA-725M4 switches between
states is extremely fast and will normally be limited by the
time constants of external circuit components, such as
the bias circuit and the bypass and blocking capacitors.
The input and output of the MGA-725M4 while in the
bypassed state are internally matched to 50Ω. The input
return loss can be further improved at 1900 MHz by
adding a 2.9 to 3.9 nH series inductor added to the input.
This is the same approximate value of inductor that is
used to improve input match when the MGA-725M4 is in
the amplifier state.
Thermal Considerations
Good thermal design is always an important consideration in the reliable use of any device, since the Mean
Time To Failure (MTTF) of semiconductors is inversely
proportional to the operating temperature.
16
The MGA-725M4 is a comparatively low power dissipation device. When biased at 3 volts and 20 mA for LNA
application, the power dissipation is 3.0 volts x 20 mA
or 60 mW. The temperature increment from the RFIC
channel to its case is then 0.060 watt x 200°C/Watt, or
only 12°C. Subtracting the channel to case temperature
rise from the suggested maximum junction temperature
of 150°C, the resulting maximum allowable case temperature is 138°C.
The worst case thermal situation occurs when the
MGA-725M4 is operated at its Maximum Operating
Conditions in an effort to maximize output power or to
achieve minimum distortion. A similar calculation for the
Maximum Operating bias of 4.2 volts and 60 mA yields a
maximum allowable case temperature of 100°C. This calculation further assumes the worst case of no RF power
being extracted from the device. When operated in a
saturated mode, both power added efficiency and the
maximum allowable case temperature will increase.
Note “Case” temperature for surface mount packages
such as the SOT-343 refers to the interface between the
package pins and the mounting surface, i.e., the temperature at the PCB mounting pad. The primary heat path
from the RFIC chip to the system heat sink is by means of
conduction through the package leads and ground vias
to the ground plane of the PCB.
PCB Layout and Grounding
When laying out a printed circuit board for the MGA725M4, several points should be considered. Of primary
concern is the RF bypassing of the ground terminals
when the device is biased using the source resistor
method.
Package Footprint
A suggested PCB pad print for the miniature, Minipak
1412 package used by the MGA-725M4 is shown in
Figure 10.
0.4
0.016
0.3
0.012
0.5
0.020
1.1
0.043
0.3
0.012
0.4
0.016
0.5
0.020
Figure 10. PCB Pad Print for Minipak 1412 Package (mm [inches]).
This pad print provides allowance for package placement
by automated assembly equipment without adding
excessive parasitics that could impair the high frequency
performance of the MGA-725M4. The layout is shown
with a footprint of the MGA-725M4 superimposed on the
PCB pads for reference.
RF Bypass
For layouts using the source resistor method of biasing,
both of the ground terminals of the MGA-725M4 must be
well by-passed to maintain device stability.
Beginning with the package pad print in Figure 10, a RF
layout similar to the one shown in Figure 11 is a good
starting point for using the MGA-725M4 with capacitorbypassed ground terminals. It is a best practice to use
multiple vias to minimize overall ground path inductance.
Two capacitors are used at each of the PCB pads for
both Pins 1 and 3. The value of the bypass capacitors is
a balance between providing a small reactance for good
RF grounding, yet not being so large that the capacitor’s
parasitics introduce undesirable resonances or loss.
If the source resistor biasing method is used, a ground
pad located near either Pin 1 or Pin 3 may be used to
connect the current-setting resistor (Rbias) directly to
DC ground. If the Rbias resistor is not located immediately adjacent to the MGA-725M4 (as may be the case
of dynamic control of the device’s linearity), then a small
series resistor (e.g. 10Ω) located near the ground terminal
will help de-Q the connection from the MGA-725M4 to
an external current-setting circuit.
PCB material
FR-4 or G-10 type dielectric materials are typical choices
for most low cost wireless applications using single or
multi-layer printed circuit boards. The thickness of singlelayer boards usually range from 0.020 to 0.031 inches.
Circuit boards should be constructed so that distance to
ground for RF signals are less than 0.031 inches. Using
PCB layer stacks that are greater than this are not recommended due to excessive inductance in the vias.
Application Example
An example evaluation PCB layout for the MGA-725M4 is
shown in Figure 12. This evaluation circuit is designed for
operation from a +3-volts supply and includes provision
for a 2-bit DIP switch to set the state of the MGA-725M4.
For evaluation purposes, the 2-bit switch is used to set
the device to either of four states: (1) bypass mode-switch
bypasses the amplifier, (2) low noise amplifier mode–low
bias current, (3) and (4) driver amplifier modes–high bias
currents.
Figure 11. Layout for RF Bypass.
Vd
AVAGO
MGA-71,72
4/00
C1
R1
C5
Out
C
C
R3
R2 C0
Vin
C2
C6
L1
C0
SW
Figure 13. Complete Amplifier with Component Reference Designators.
17
Vcon
C3
CSP
IN
C4
Out
RFC
SC
Vin
C0
IN
Vcon
Vd
AVAGO
MGA-71,72
9/00
C
Figure 12. PCB Layout for Evaluation Circuit.
A Note on Performance
Vd
C0
C
RFC
C2
C3
RF
Input
RF
Output
C4
C1
L1
C
C5
C6
R1
C
R2
SW1
R3
SW2
R4
Rbias
Vcon
Figure 14. Schematic Diagram of 1900 MHz Evaluation Amplifier.
A complete evaluation amplifier optimized for use at
1900 MHz is shown with all related components and
SMA connectors in Figure 13. A schematic diagram of the
evaluation circuit is shown in Figure 14 with component
values in Table 1.
Table 1. Component Values for 1900 MHz Amplifier.
R1
=5.1 kΩ
C
=100pF
R2
=5.1kΩ
C0
=1000pF
R3
=10Ω
C1
=100pF
R4
=24Ω
C2
=47pF
L1
=3.9nH
C3
=30pF
RFC
=22nH
C4
=22pF
SW1, SW2
DIP switch
C5
=22pF
SC
Short
C6
=30pF
The on-board resistors R3 and R4 form the equivalent
source bias resistor Rbias as indicated in the schematic
diagram in Figure 14. In this example, resistor values of
R3=10Ω and R4=24Ω were chosen to set the nominal
device current for the four states: (1) bypass mode, 0 mA,
(2) LNA mode, 20 mA, (3) driver, 35 mA, and (4) driver,
40 mA.
Other currents can be set by positioning the DIP switch
to the bypass state and adding an external bias resistor to
Vcon. Unless an external resistor is used to set the current,
the Vcon terminal is left open. DC blocking capacitors are
provided for the both the input and output.
The 2-pin, 0.100" centerline single row headers attached
to the Vd and Vcon connections on the PCB provide a convenient means of making connections to the board using
either a mating connector or clip leads.
18
For the evaluation circuit above, fabricated on 0.031inch thick GETEK G200D (er=4.2) dielectric material,
circuit losses of about 0.3 dB would be expected at both
the input and output sides of the RFIC at 1900 MHz.
Measured noise figure (3 volts, 20 mA bias) would then
be approximately 1.8 dB and gain 13.8 dB.
Hints and Troubleshooting
C0
C0
Actual performance of the MGA-725M4 as measured in
an evaluation circuit may not exactly match the datasheet
specifications. The circuit board material, passive components, RF bypasses and connectors all introduce losses
and parasitics that degrade device performance.
Preventing Oscillation
Stability of the MGA-725M4 is dependent on having very
good RF grounding. Inadequate device grounding or
poor PCB layout techniques could cause the device to be
potentially unstable.
Even though a design may be unconditionally stable (K>1
and B1>0) over its full frequency range, other possibilities exist that may cause an amplifier circuit to oscillate.
One condition to check for is feedback in the bias circuit.
It is important to capacitively bypass the connections to
active bias circuits to ensure stable operation. In multistage circuits, feedback through bias lines can also lead
to oscillation.
Components of insufficient quality for the frequency
range of the amplifier can sometimes lead to instability. Also, component values that are chosen to be much
higher in value than is appropriate for the application can
present a problem. In both of these cases, the components may have reactive parasitics that make their impedances very different than expected. Chip capacitors may
have excessive inductance or chip inductors can exhibit
resonances at unexpected frequencies.
A Note on Supply Line Bypassing
Multiple bypass capacitors are normally used throughout
the power distribution within a wireless system. Consideration should be given to potential resonances formed by
the combination of these capacitors and the inductance
of the DC distribution lines. The addition of a small value
resistor in the bias supply line between bypass capacitors
will often de-Q the bias circuit and eliminate resonance
effects.
Statistical Parameters
Several categories of parameters appear within the
electrical specification portion of the MGA-725M4 data
sheet. Parameters may be described with values that
are either “minimum or maximum”, “typical” or “standard
deviation”.
The values for parameters are based on comprehensive
product characterization data, in which automated
measurements are made on a statistically significant
number of parts taken from nonconsecutive process lots
of semiconductor wafers. The data derived from product
characterization tends to be normally distributed, e.g., fits
the standard bell curve.
Parameters considered to be the most important to
system performance are bounded by minimum or
maximum values. For the MGA-725M4, these parameters are: Vc test, NFtest, Ga test, IIP3test, and ILtest. Each of the
guaranteed parameters is 100% tested as part of normal
manufacturing and test process.
Values for most of the parameters in the table of Electrical Specifications that are described by typical data are
mathematical mean (), of the normal distribution taken
from the characterization data. For parameters where
measurements of mathematical averaging may not be
practical, such as S-parameters or Noise Parameters and
the performance curve, the data represents a nominal
part taken from the center of the characterization distribution. Typical values are intended to be used as a basis
for electrical design.
Standard statistics tables or calculations provide the
probability of a parameter falling between any two
values, usually symmetrically located about the mean.
Referring to Figure 15 for example, the probability of a
parameter being between ±1 is 68.3%; between ±2 is
95.4%; and between ±3 is 99.7%.
68%
95%
99%
-3V
-2V
-1V Mean (μ) +1V
(typical)
+2V
Parameter Value
Figure 15. Normal Distribution Curve.
Phase Reference Planes
The positions of the reference planes used to specify
S-parameters and Noise Parameters for the MGA-725M4
are shown in Figure 16. As seen in the illustration, the
reference planes are located at centre of package solder
pads.
S and Noise Parameter data was taken with the package
mounted to 50 ohm lines on 10 mil alumina substrates,
and the ground pads were connected directly to the
substrate ground plane through a solid metal rib.
Designers should include the parasitics of the grounding
system used in their application.
To assist designers in optimizing not only the immediate
amplifier circuit using the MGA-725M4, but to also
evaluate and optimize trade-offs that affect a complete
wireless system, the standard deviation () is provided
for many of the Electrical Specification parameters (at
25°C). The standard deviation is a measure of variability
about the mean. It will be recalled that a normal distribution is completely described by the mean and standard
deviation.
Reference
Planes
Bottom View
Figure 16. Phase Reference Planes.
19
+3V
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AV02-1141EN – February 16, 2017