TELEPHONE: (201) 376-2922 (212) 227-6005 TELEX: 13-8720 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HIGH SPEED Silicon Controlled Rectifier C397/C398 1200 Volts, 650 A RMS MAXIMUM ALLOWABLE RATINGS TYPES REPETITIVE PEAK OFF-STATE VOLTAGE, V D R M ' Tj - -40°C to +125'C REPETITIVE PEAK REVERSE VOLTAGE, V R R M > Tj - -40°C to -M25°C NON-REPETITIVE PEAK REVERSE VOLTAGE, V R S M ' Tj - 125°C C397/C398E C397/C398M C397/C398S C397/C398N C397/C398T C397/C398P C397/C398PA C397/C398PB 500 Volts 600 700 800 900 1000 1100 1200 500 Volts 600 700 800 900 1000 1100 1200 600 Volts 720 840 960 1080 1200 1300 1400 ' Half sine wave waveform, 10 IDS max. pulse width. Peak One Cycle Surge (Non-Repetitive) On-State C u r r e n t , I TSM I 2 t (for fusing) for times > 1.5 milliseconds I 2 t (for fusing) for limes > 8.3 milliseconds Critical Rntc-of-Rise of On-State Current, Non-Repetitive Critical Rate-of-Rise of On-State C u r r e n t , Repetitive Average Gate Power Dissipation, PG(AV) Storage Temperature, T s t p Operating Temperature, Tj Mounting Force Required Quality Semi-Conductors '• 7500 Amperes 95,000 (RMS Ampere) 2 Seconds 230,000 (RMS Ampere) 2 Seconds 800 A/^s t 500 A/MS f 2 Watts -40°C to +150°C , -40°C to +125°C 2000 Lb, ± 10% 8.9 KN ± 10% I C397/C398 CHARACTERISTICS TEST Repetitive Peak Reverse and Off-State Current Repetitive Peak Reverse and Off-State C u r r e n t SYMBOL MIN. 'KKM and 'DRM TYP. MAX. UNITS 5 20 mA TEST CONDITION Tj - +25°C V = VDRM = V R R M " 'HUM 20 45 mA Tj = 125°C and 'DKM Thermal Resistance ROJC Critical Rate-of-Rise of Off-State Voltage (Higher values may cause device switching) dv/dt v = VDKM .05 200 .06 0 07 W a t t V/jjsec 500 = VRKM Junction-to-Case (DC) (Double-Side Cooled) Tj = 125°C, Gate Open. V D R M = Rated, Linear or Exponential Rising Waveform. F v n n n e n t n ! d v / d t - UI *M ( rtT>1 Hipier minimum ilv/clt selections available - consult factory. DC Gate Trigger Current DC Gate Trigger Voltage mAdc - 150 300 125 - 3 5 Vdc 1.25 3,0 - - V-,-M 2.7 3.0 Volts Tc = •'•25"C, I i-M = 3000 Amps Peak. D u t y Cycle < .01%. Pulse W i d t h = 1 ms. t,i 0.5 " fj SO C Tc = +25°C, I T M = 50 Adc, V D R M . G a t e S u p p l y : 20 v o l t open c i r c u i t , 20 ohms, 0.1 /usec max. rise t i m e , f t . t t t VGT _ 0. ! 5 Peak On-State Voltage Turn-On Delay Time Conventional Circuit Commutatcd Turn-Off Time (with Reverse Voltage) - C39S C397 C398 C397 Tc = 20 t 35 t 30 40 45 CO •- '10 t 60 t Tc = -40°C to 25°C, V D = 6 Vdc, R L = 3 Ohms Tc- = 25°C to + I 2 5 ° C , V D = 6 Vdc, RL = •' O h m s TC = I 2 5 ° C , V m u i , R,. = 1000 Ohms (1) (2) (3) (4)' (5) Tc = + 1 2 5 ° C I T M = 500 Amps. V R = 50 Volts Min. V|i RM ( R e a p p l i e d ) Rate-of-rise of reappb'ed off-state voltage = 20 V/^sec (linear) (6) C o m m u t a t i o n cli/ilt = 25 Amps/^(sec (7) R e p e t i t i o n rate = 1 pps, ( 8 ) G a t e bias d u r i n g t u r n - o f f interval = 0 volts, 100 o h m s (1) C) (3) (4) (5) T r = +125°C ITM = SOO Amps. V R = 50 Volts Min. VI)KM (Reapplied) Rate-of-rise of reappliecl off-state v o l t a p e = 200 V/AISL-C ( l i n e a r ) ( 6 ) C o m m u t a t i o n d i / d t = 25 Amps/yl/sec (7) R e p e t i t i o n r a t e = 1 pps. 8) G a t e b i a s d u r i n g t u r n - o f f i n t e r v a l = 0 v o l t s , 100 o h m s A' sec l i](ilioili-) -40°C, V D = 6 Vdc, R L = 3 Ohms Tc = +125°C, V D = 6 Vdc, R L = 3 Ohms /jsec 'q C398 C397 Conventional C i r c u i t Commutated Turn-Off Time ( w i t h Feedback Diode) Tc = +25°C, V D = 6 Vdc, R L = 3 Ohms 50 75 IS IGT (1) (2) 3) 4) (5) Tc = +125°C I TM = ^00 Amps V,, = 1 Volt VDRW (Reapplied) Rate-of-rise ol r e n p p l i v d off-state voltage = 200 V/A/sec ( l i n e a r ) (6) C o m m u t a t i o n d i / d t = 25 Amps//Jsec 7) R e p e t i t i o n r a t e = 1 pps. (8) Gate bias d u r i n g t u r n - o f f interval = 0 volts, 100 ohms