Infineon AUIRFS4610TRL Automotive grade Datasheet

AUIRFB4610
AUIRFS4610
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 Enhanced dV/dT and dI/dT capability
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Package Type
AUIRFB4610
TO-220
AUIRFS4610
D2-Pak
100V
RDS(on) typ.
11m
max.
14m
ID
73A
D
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
Base part number
VDSS
S
G
S
D
G
D2Pak
AUIRFS4610
TO-220
AUIRFB4610
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
S
Source
Orderable Part Number
AUIRFB4610
AUIRFS4610
AUIRFS4610TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
73
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
52
290
190
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
RJC
RCS
RJA
RJA
Parameter
Junction-to-Case 
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state) 
Max.
Units
A
W
1.3
± 20
370
See Fig.14,15, 22a, 22b
7.6
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
°C
300
10 lbf•in (1.1N•m)
Typ.
Max.
Units
–––
0.50
–––
0.77
–––
62
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRFB/S4610
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
Min.
Typ. Max. Units
100
–––
–––
V
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
11
14
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
RG
Forward Trans conductance
Gate Resistance
IDSS
Drain-to-Source Leakage Current
73
–––
–––
–––
1.5
–––
–––
–––
20
–––
–––
250
S VDS = 50V, ID = 44A
 ƒ = 1.0MHz, open drain
VDS = 100V, VGS = 0V
µA
VDS = 100V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
Gate-to-Source Reverse Leakage
–––
–––
-200
0.085 –––
V/°C Reference to 25°C, ID = 1mA 
m VGS = 10V, ID = 44A 
nA
VDS = VGS, ID = 100µA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
90
20
36
18
87
53
70
3550
260
140
–––
–––
–––
–––
–––
–––
–––
–––
Crss
Reverse Transfer Capacitance
–––
150
–––
Coss eff.(ER)
Effective Output Capacitance (Energy Related)
–––
330
–––
VGS = 0V, VDS = 0V to 80V
Coss eff.(TR)
Effective Output Capacitance (Time Related)
–––
380
–––
VGS = 0V, VDS = 0V to 80V
Min.
Typ. Max. Units
–––
–––
73
–––
–––
290
–––
–––
–––
–––
–––
–––
–––
35
42
44
65
2.1
1.3
53
63
66
98
–––
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ID = 44A
nC VDS = 80V
VGS = 10V
VDD = 65V
ID = 44A
ns
RG= 5.6
VGS = 10V
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz, See Fig. 5
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 44A,VGS = 0V 
TJ = 25°C
VDD = 85V
ns
TJ = 125°C
IF = 44A,
TJ = 25°C di/dt = 100A/µs 
nC
TJ = 125°C
A TJ = 25°C 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.39mH, RG = 25, IAS = 44A, VGS =10V. Part not recommended for use above this value.
ISD 44A, di/dt 660A/µs, VDD V(BR)DSS, TJ  175°C.
Pulse width 400µs; duty cycle  2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
 R is measured at TJ approximately 90°C.







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AUIRFB/S4610
1000
100
BOTTOM
10
4.5V
 60µs PULSE WIDTH
Tj = 25°C
BOTTOM
100
4.5V
 60µs PULSE WIDTH
Tj = 25°C
1
10
0.1
1
10
100
0.1
VDS , Drain-to-Source Voltage (V)
10
100
Fig. 2 Typical Output Characteristics
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000.0
ID, Drain-to-Source Current)
1
VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
VDS = 25V
 60µs PULSE WIDTH
2.0
3.0
4.0
5.0
6.0
7.0
ID = 73A
VGS = 10V
2.5
2.0
1.5
1.0
0.5
0.1
-60 -40 -20
8.0
20
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
5000
Coss = Cds + Cgd
4000
Ciss
3000
2000
1000
Coss
Crss
ID= 44A
VDS = 80V
16
VDS= 50V
VDS= 20V
12
8
4
0
0
1
20 40 60 80 100 120 140 160 180
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 3 Typical Transfer Characteristics
6000
0
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
100
0
20
40
60
80
100
120
140
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFB/S4610
1000
100.0
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000.0
TJ = 175°C
10.0
TJ = 25°C
1.0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100µsec
100
10
1msec
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
2.0
10
ID , Drain Current (A)
80
60
40
20
0
75
100
125
150
125
120
115
110
105
100
-60 -40 -20
175
Fg 9. Maximum Drain Current vs. Case Temperature
20 40 60 80 100 120 140 160 180
Fig 10. Drain-to-Source Breakdown Voltage
1600
EAS, Single Pulse Avalanche Energy (mJ)
2.0
1.5
Energy (µJ)
0
TJ , Junction Temperature (°C)
TJ , Junction Temperature (°C)
1.0
0.5
ID
4.6A
6.3A
BOTTOM 44A
TOP
1200
800
400
0
0.0
0
20
40
60
80
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
1000
Fig 8. Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
50
100
VDS , Drain-toSource Voltage (V)
VSD , Source-to-Drain Voltage (V)
25
DC
0.1
0.1
100
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. Drain Current
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AUIRFB/S4610
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
J
0.01
R1
R1
J
1
R2
R2
C
2
1
Ri (°C/W)
C
2
Ci= iRi
Ci= iRi
0.001
SINGLE PULSE
( THERMAL RESPONSE )
I (sec)
0.4367
0.001016
0.3337
0.009383
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
Duty Cycle = Single Pulse
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Avalanche Current vs. Pulse width
EAR , Avalanche Energy (mJ)
400
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 44A
300
200
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
5
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 14).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRFB/S4610
16
ID = 1.0A
ID = 1.0mA
ID = 250µA
4.0
12
IRRM - (A)
ID = 100µA
3.0
8
IF = 29A
VR = 85V
4
2.0
TJ = 125°C
TJ = 25°C
0
1.0
-75 -50 -25
0
25
50
75
100 200 300 400 500 600 700 800 900 1000
100 125 150 175
dif / dt - (A / µs)
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
Fig. 17 - Typical Recovery Current vs. dif/dt
16
300
12
200
QRR - (nC)
IRRM - (A)
8
4
100
IF = 44A
VR = 85V
IF = 29A
VR = 85V
TJ = 125°C
TJ = 25°C
0
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
dif / dt - (A / µs)
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
300
200
QRR - (nC)
VGS(th) Gate threshold Voltage (V)
5.0
100
0
IF = 44A
VR = 85V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
Fig. 20 - Typical Stored Charge vs. dif/dt
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Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
Fig 22a. Unclamped Inductive Test Circuit
Fig 23a. Switching Time Test Circuit
I AS
Fig 22b. Unclamped Inductive Waveforms
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 24a. Gate Charge Test Circuit
7
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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AUIRFB/S4610
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
Part Number
AUIRFB4610
YWWA
IR Logo
XX

Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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AUIRFB/S4610
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
Part Number
AUIRFS4610
YWWA
IR Logo
XX

Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFB/S4610
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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2015-10-27
AUIRFB/S4610
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
D2-Pak
TO-220 Pak
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
MSL1
N/A
Class M4 (+/- 400V)†
AEC-Q101-002
Class H1C (+/- 2000V)†
AEC-Q101-001
Class C3 (+/- 750V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
10/27/2015
Comments


Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
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the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
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completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
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Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
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2015-10-27