AP10TN135JB
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
100V
RDS(ON)
135mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
8.1A
S
Description
AP10TN135 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G
D
S
TO-251S(JB)
The TO-251S short lead package is preferred for all commercialindustrial through-hole applications without lead-cutted.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
8.1
A
ID@TC=100℃
Drain Current, VGS @ 10V
5.1
A
28
A
20.8
W
1.13
W
8
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
3
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
Units
6
℃/W
110
℃/W
1
201701241
AP10TN135JB
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
100
-
-
V
VGS=10V, ID=5A
-
-
135
mΩ
VGS=4.5V, ID=3A
-
-
145
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
17
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=5A
-
11
17.6
nC
Qgs
Gate-Source Charge
VDS=80V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
2
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
6
-
ns
tr
Rise Time
ID=5A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
14
-
ns
tf
Fall Time
VGS=10V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
580
928
pF
Coss
Output Capacitance
VDS=50V
Crss
Rg
-
27
-
pF
Reverse Transfer Capacitance
.
f=1.0MHz
-
19
-
pF
Gate Resistance
f=1.0MHz
-
2
4
Ω
Min.
Typ.
IS=5A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
18
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP10TN135JB
20
12
T C = 25 o C
10
ID , Drain Current (A)
ID , Drain Current (A)
16
10V
7.0V
6.0V
5.0V
V G = 4.0V
T C = 150 o C
10V
7.0V
6.0V
5.0V
V G = 4.0V
12
8
8
6
4
4
2
0
0
0
4
8
12
16
20
0
2
V DS , Drain-to-Source Voltage (V)
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
115
2.8
I D =5A
V GS =10V
I D =3A
o
2.4
T C =25 C
107
.
103
Normalized RDS(ON)
RDS(ON) (mΩ)
111
2.0
1.6
1.2
0.8
99
0.4
0.0
95
2
4
6
8
-100
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
3
Normalized VGS(th)
I D =1mA
IS(A)
2
T j =150 o C
T j =25 o C
1.2
0.8
1
0.4
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP10TN135JB
f=1.0MHz
12
1000
I D = 5A
V DS =50V
800
8
C (pF)
VGS , Gate to Source Voltage (V)
10
600
C iss
6
400
4
200
2
0
C oss
C rss
0
0
4
8
12
16
Q G , Total Gate Charge (nC)
0
Fig 7. Gate Charge Characteristics
20
40
60
80
V DS ,Drain-to-Source Voltage (V)
100
120
Fig 8. Typical Capacitance Characteristics
1
Operation in this area
limited by RDS(ON)
ID (A)
10
10us
.
1
100us
0.1
1ms
10ms
DC
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
100
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP10TN135JB
24
500
T j =25 o C
20
PD, Power Dissipation(W)
RDS(ON) (mΩ)
400
300
200
4.5V
V GS =10V
100
16
12
8
4
0
0
0
2
4
6
8
10
0
12
50
100
150
T C , Case Temperature( o C)
I D , Drain Current (A)
Fig 13. Typ. Drain-Source on State
Resistance
Fig 14. Total Power Dissipation
2
I D =1mA
Normalized BVDSS
1.6
1.2
.
0.8
0.4
0
-100
-50
T
0
j
50
100
150
, Junction Temperature ( o C)
Fig 15. Normalized BVDSS v.s. Junction
5
AP10TN135JB
MARKING INFORMATION
Part Number
10TN135
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6