DTM3A25P20NFDB 25V PNP LOW SAT TRANSISTOR WITH N-CHANNEL MOSFET Features Mechanical Data Combination of PNP low VCE(sat) Transistor and N-Channel Case: U-DFN2020-6 (Type B) UL Flammability Rating 94V-0 MOSFET Very low collector-emitter saturation voltage VCE(sat) High Collector Current Capability IC and ICM High Collector Current Gain (hFE) at high IC PD up to 2.47W for power demanding applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Case Material: Molded Plastic. “Green” Molding Compound. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - NiPdAu, Solderable per MIL-STD-202, Method 208 e4 Weight: 0.007 grams (Approximate) U-DFN2020-6 (Type B) C G S 6 D C 1 E Top View B D Top View Pin-Out Device Symbol Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DTM3A25P20NFDB-7 1W1 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 1W1 YWX 1W1 = Product Type Marking Code Y = Year: 0~9 (Last Digit of the Year) W = Week: A~Z: Week 1~26; a~z: Week 27~52 ; z represents week 52 and 53 X = A~Z: Internal Code M = Month (ex: 9 = September) DTM3A25P20NFDB Datasheet Number: DS38017 Rev.1 - 2 1 of 10 www.diodes.com January 2016 © Diodes Incorporated DTM3A25P20NFDB BJT Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current Symbol VCBO VCEO VEBO IC ICM IB Value -35 -25 -7 -3 -6 -500 Unit V V V A A mA MOSFET Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage Gate-Source Voltage Value 20 ±6 Units V V ID 0.63 0.45 A IDM 6 A VDSS VGSS Continuous Drain Current (Note 5) VGS = 10 V @TA = +25°C @TA = +85°C Pulsed Drain Current Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Symbol (Notes 5 & 7) (Notes 5 & 8) (Notes 6 & 7) (Notes 6 & 8) (Notes 5 & 7) (Notes 5 & 8) (Notes 6 & 7) (Notes 6 & 8) (Note 9) PD RJA RJL TJ, TSTG Value 405 510 1,650 2,470 308 245 76 51 18 -55 to +150 Unit mW °C/W °C/W °C ESD Ratings (Note 10) Characteristic Electrostatic Discharge – Human Body Model Electrostatic Discharge – Machine Model Notes: Symbol ESD HBM ESD MM Value 3,000 200 Unit V V JEDEC Class 3A C 5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (5), except the device is mounted with the collector pad on 28mm x 28mm (8cm2) 2oz copper. 7. For a dual device with one active die. 8. For dual device with 2 active die running at equal power. 9. Thermal resistance from junction to solder-point (on the exposed collector pads). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. DTM3A25P20NFDB Datasheet Number: DS38017 Rev.1 - 2 2 of 10 www.diodes.com January 2016 © Diodes Incorporated DTM3A25P20NFDB Thermal Characteristics and Derating information 10 2.5 See note 5 & 7 Max Power Dissipation (W) IC Collector Current (A) VCE(sat) Limited 1 DC 100m 1s 100ms 10ms 10m 1ms Single Pulse T amb=25°C 1m 100µs 100m 1 10 VCE Collector-Emitter Voltage (V) See note 6 & 8 2.0 See note 6 & 7 1.5 See note 5 & 7 1.0 See note 5 & 8 0.5 0.0 0 20 Maximum Power (W) Thermal Resistance (°C/W) Single Pulse D=0.05 D=0.1 1 10 100 Single Pulse T amb=25°C, 10 See note 5 & 7 1 0.1 100µ 1k 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation 100 80 T amb=25°C, 70 Maximum Power (W) Thermal Resistance (°C/W) 100 120 140 160 100 Transient Thermal Impedance See note 6 & 7 60 D=0.5 40 30 80 Derating Curve Pulse Width (s) 50 60 Temperature (°C) Safe Operating Area 330 T amb=25°C, 300 270 See note 5 & 7 240 210 180 D=0.5 150 120 90 D=0.2 60 30 0 100µ 1m 10m 100m 40 D=0.2 Single Pulse 20 D=0.05 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k Single Pulse T amb=25°C, See note 6 & 7 10 1 100µ Transient Thermal Impedance DTM3A25P20NFDB Datasheet Number: DS38017 Rev.1 - 2 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) 3 of 10 www.diodes.com Pulse Power Dissipation January 2016 © Diodes Incorporated DTM3A25P20NFDB Typical Electrical Characteristics - BJT PNP (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 11) Emitter-Base Breakdown Voltage Symbol BVCBO BVCEO BVEBO Min -35 -25 -7 Typ -60 -40 -8.4 Collector Cutoff Current ICBO - <1 Emitter Cutoff Current Collector Emitter Cutoff Current IEBO ICES - hFE 200 130 100 25 Collector-Emitter Saturation Voltage (Note 11) VCE(sat) - Base-Emitter Turn-On Voltage (Note 11) Base-Emitter Saturation Voltage (Note 11) VBE(on) VBE(sat) - Static Forward Current Transfer Ratio (Note 11) Note: <1 - Max -50 -0.5 -50 -100 Unit V V V nA µA nA nA 320 230 180 50 500 - - -85 -229 -786 -895 -150 -350 -850 -1,000 mV mV mV Test Condition IC = -100µA IC = -10mA IE = -100µA VCB = -28V VCB = -28V, TA = +100°C VEB = -5.6V VCE= -32V IC = -100mA, VCE = -2V IC = -1A, VCE = -2V IC = -2A, VCE = -2V IC = -6A, VCE = -2V IC = -1A, IB = -100mA IC = -3A, IB = -300mA IC = -1A, VCE = -5V IC = -1A, IB = -100mA 11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%. DTM3A25P20NFDB Datasheet Number: DS38017 Rev.1 - 2 4 of 10 www.diodes.com January 2016 © Diodes Incorporated DTM3A25P20NFDB Typical Electrical Characteristics - BJT PNP (@TA = +25°C, unless otherwise specified.) 1 Tamb=25°C - VCE(sat) (V) 10m - VCE(sat) (V) IC/IB=50 100m IC/IB=10 0.3 IC/IB=100 IC/IB=10 IC/IB=20 150°C 0.2 100°C 0.1 25°C -55°C 1m 1m 10m 100m 0.0 10m 1 - IC Collector Current (A) 100m 1 - IC Collector Current (A) VCE(sat) v IC VCE(sat) v IC 1.2 IC/IB=10 VCE=-2V 500 25°C 400 100°C 300 25°C 200 100 -55°C 0 1m 10m 100m 1 0.8 0.6 150°C 0.2 1m 10 100°C 0.4 - IC Collector Current (A) hFE v IC 10m 100m 1 - IC Collector Current (A) VBE(sat) v IC 180 1.2 VCE=-2V -55°C 25°C 0.8 0.6 150°C 0.4 100°C 0.2 1m 10m 100m 1 - IC Collector Current (A) Capacitance (pF) 160 1.0 - VBE(on) (V) -55°C 1.0 - VBE(sat) (V) Typical Gain (hFE) 150°C 140 Datasheet Number: DS38017 Rev.1 - 2 Cibo 120 100 80 60 40 Cobo 20 0 10m 100m 1 - Voltage(V) 10 Capacitance v Voltage VBE(on) v IC DTM3A25P20NFDB f = 1MHz 5 of 10 www.diodes.com January 2016 © Diodes Incorporated DTM3A25P20NFDB Typical Electrical Characteristics – MOS N-Channel (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 12) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 12) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 100 1.0 V nA µA VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = V, VDS = 0V VGS(th) 0.5 RDS (ON) YFS VSD 1.0 0.4 0.5 0.7 1.2 V Static Drain-Source On-Resistance 0.3 0.4 0.5 1.4 0.7 VDS = VGS, ID = 250µA VGS = 4.5V, ID = 600mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS = 10V, ID = 400mA VGS = 0V, ID = 150mA Ciss Coss Crss QG QGS QGD 60.67 9.68 5.37 736.6 93.6 116.6 pF pF pF pC pC pC td(on) tr td(off) tf 5.1 7.4 26.7 12.3 ns Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 13) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: Ω S V Test Condition VDS = 16V, VGS = 0V f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA 12. Short duration pulse test used to minimize self-heating effect. 13. Guaranteed by design. Not subject to production testing. DTM3A25P20NFDB Datasheet Number: DS38017 Rev.1 - 2 6 of 10 www.diodes.com January 2016 © Diodes Incorporated DTM3A25P20NFDB Typical Electrical Characteristics – MOS N-Channel (@TA = +25°C, unless otherwise specified.) 1.5 1.5 VGS = 8.0V VGS = 4.5V 1.2 VGS = 3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.2 VGS = 2.5V VGS = 2.0V 0.9 0.6 VGS = 1.5V VDS = 5V 0.9 0.6 TA = 150°C TA = 125°C 0.3 0.3 TA = 85°C TA = 25°C TA = -55°C VGS = 1.2V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 0.7 0.6 0.5 VGS = 1.8V 0.4 VGS = 2.5V VGS = 4.5V 0.2 0.1 0 0 0.3 0.6 0.9 1.2 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 2.5V ID = 500mA VGS = 4.5V ID = 1.0A 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DTM3A25P20NFDB Datasheet Number: DS38017 Rev.1 - 2 VGS = 4.5V 0.5 TA = 150°C 0.4 TA = 125°C TA = 85°C 0.3 TA = 25°C 0.2 TA = -55°C 0.1 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.5 1.1 3 0.6 1.5 1.7 1.3 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 0.8 0.3 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 7 of 10 www.diodes.com 0.3 0.6 0.9 1.2 1.5 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.8 0.6 VGS = 2.5V ID = 500mA 0.4 VGS = 4.5V ID = 1.0A 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature January 2016 © Diodes Incorporated DTM3A25P20NFDB VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.6 10 IS, SOURCE CURRENT (A) 8 1.2 0.8 ID = 250µA 0.4 6 TA = 25°C 4 2 0 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 100 C, CAPACITANCE (pF) Ciss 10 C oss Crss 1 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 1.2 1,000 TA = 150°C 100 TA = 125°C 10 T A = 85°C TA = 25°C 1 0 20 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 486°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * R JA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 11 Transient Thermal Response DTM3A25P20NFDB Datasheet Number: DS38017 Rev.1 - 2 8 of 10 www.diodes.com January 2016 © Diodes Incorporated DTM3A25P20NFDB Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. A A3 A1 Seating Plane D D2 D2 R0.1 50 (Pin # 1 ID) E z1 E2 z1 k L U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0.00 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 k 0.45 L 0.25 0.35 0.30 z 0.225 z1 0.175 All Dimensions in mm e z b Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X2 C Dimensions X1(2x) Y2 Y1(2x) G G1 C G G1 X X1 X2 Y Y1 Y2 Value (in mm) 0.650 0.150 0.450 0.350 0.600 1.650 0.500 1.000 2.300 Y X DTM3A25P20NFDB Datasheet Number: DS38017 Rev.1 - 2 9 of 10 www.diodes.com January 2016 © Diodes Incorporated DTM3A25P20NFDB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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