CREE CGHV31500F-AMP 500 w, 2700 - 3100 mhz, 50-ohm input Datasheet

PRELIMINARY
CGHV31500F
500 W, 2700 - 3100 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV31500F ideal for 2.7 - 3.1 GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440217.
PN: CGHV315
00F
Package Type
: 440217
Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.7 GHz
2.9 GHz
3.1 GHz
Units
Output Power
665
705
645
W
Gain
13.2
13.5
13.1
dB
66
68
62
%
Drain Efficiency
Note:
Measured in the CGHV31500F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, PIN = 45 dBm.
20
Rev 1.0 - August
Y
15 - PRELIMINAR
Features
•
2.7 - 3.1 GHz Operation
•
675 W Typical Output Power
•
13.3 dB Power Gain
•
66% Typical Drain Efficiency
•
50 Ohm Internally Matched
•
<0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Pulse Width
PW
500
µs
Duty Cycle
DC
10
%
Drain-Source Voltage
VDSS
125
Volts
25˚C
25˚C
Gate-to-Source Voltage
VGS
-10, +2
Volts
Storage Temperature
TSTG
-65, +150
˚C
Conditions
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
80
mA
25˚C
Maximum Drain Current1
IDMAX
24
A
25˚C
TS
245
˚C
τ
40
in-oz
Pulsed Thermal Resistance, Junction to Case
RθJC
0.22
˚C/W
100 μsec, 10%, 85˚C , PDISS = 376 W
Pulsed Thermal Resistance, Junction to Case
RθJC
0.30
˚C/W
500 μsec, 10%, 85˚C, PDISS = 376 W
TC
-40, +85
˚C
Soldering Temperature
2
Screw Torque
Case Operating Temperature
Notes:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
Electrical Characteristics
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.8
-3.0
-2.3
VDC
VDS = 10 V, ID = 83.6 mA
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
VDS = 50 V, ID = 0.5 A
Saturated Drain Current2
IDS
62.7
75.5
–
A
VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage
VBR
150
–
–
VDC
VGS = -8 V, ID = 83.6 mA
DC Characteristics (TC = 25˚C)
1
Notes:
1
Measured on wafer prior to packaging.
2
Scaled from PCM data.
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGHV31500F Rev 1.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Electrical Characteristics Continued...
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
RF Characteristics3 (TC = 25˚C, F0 = 2.7 - 3.1 GHz unless otherwise noted)
Output Power at 2.7 GHz
POUT1
–
665
–
W
VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm
Output Power at 2.9 GHz
POUT2
–
705
–
W
VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm
Output Power at 3.1 GHz
POUT3
–
645
–
W
VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm
Gain at 2.7 GHz
GP1
–
13.2
–
dB
VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm
Gain at 2.9 GHz
GP2
–
13.5
–
dB
VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm
Gain at 3.1 GHz
GP3
–
13.1
–
dB
VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm
Drain Efficiency at 2.7 GHz
DE1
–
66
–
%
VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm
Drain Efficiency at 2.9 GHz
DE2
–
68
–
%
VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm
Drain Efficiency at 3.1 GHz
DE3
–
62
–
%
VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm
Small Signal Gain
S21
–
14.5
–
dB
VDD = 50 V, IDQ = 500 mA, PIN = -10 dBm
Input Return Loss
S11
–
-15
–
dB
VDD = 50 V, IDQ = 500 mA, PIN = -10 dBm
Output Return Loss
S22
–
-6
–
dB
VDD = 50 V, IDQ = 500 mA, PIN = -10 dBm
D
–
-0.3
–
dB
VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm
VSWR
–
5:1
–
Y
Amplitude Droop
Output Stress Match
No damage at all phase angles,
VDD = 50 V, IDQ = 500 mA, PIN = 45 dBm Pulsed
Notes:
3
Measured in CGHV31500F-AMP. Pulse Width = 500 μS, Duty Cycle = 10%.
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGHV31500F Rev 1.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure
1. - CGHV31500F S-Parameters
CGHV31400F Typical Sparameters
VDD==50
50V,V,Idq
IDQ==500
0.5mA
A
Vdd
20
15
Magnitude (dB)
10
5
0
-5
-10
S(2,1)
-15
S(1,1)
S(2,2)
-20
2.3
2.5
2.7
2.9
Frequency (GHz)
3.1
3.3
3.5
Output
Power,
Gainand
andDrain
DrainEfficiency
Efficiency vs
vs.Frequency
Frequency
Figure CGHV31400F
2. - CGHV31500F
Output
Power
Vdd
=
50
V,
Idq
=
500
mA,
Pin
=
45
dBm,
Pulse
Width
=
500
us,
Duty
10
VDD = 50 V, IDQ = 0.5 A, PIN = 45 dBm, Pulse Width = 500μs, Duty Cycle = 10%, Cycle
TCASE ==25°C
%, Tcase = 25 ̊C
800
80
Output Power
70
Drain Efficiency
Output Power (W)
600
60
500
50
400
40
Output Power
Gain
300
30
Drain Efficiency
200
20
Gain
100
0
10
2.5
2.6
2.7
2.8
2.9
Frequency (GHz)
3.0
3.1
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
Gain (dB) & Drain Efficiency (%)
700
CGHV31500F Rev 1.0 - PRELIMINARY
3.2
3.3
0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV31500F-AMP Application Circuit Bill of Materials
Designator
Description
Qty
R1
RES, 511, OHM, +/- 1%, 1/16W, 0603
R2
RES, 5.1, OHM, +/- 1%, 1/16W, 0603
1
1
C1
CAP, 6.8pF, +/-0.25%, 250V, 0603
1
C2, C7, C8
CAP, 10.0pF, +/-1%, 250V, 0805
3
C3
CAP, 10.0pF, +/-5%, 250V, 0603
1
CAP, 470pF, 5%, 100V, 0603, X
2
C4, C9
C5
CAP, 33000 pF, 0805, 100V, X7R
1
C6
CAP, 10uF 16V TANTALUM
1
C10
CAP, 1.0uF, 100V, 10%, X7R, 1210
1
C11
CAP, 33uF, 20%, G CASE
1
C12
CAP, 3300uF, +/-20%, 100V, ELECTROLYTIC
1
CONN, SMA, PANEL MOUNT JACK, FL
2
HEADER, RT>PLZ, 0.1CEN LK 9POS
1
J4
CONNECTOR; SMB, Straight, JACK, SMD
1
W1
CABLE, 18 AWG, 4.2
1
PCB, RO4350, 2.5 X 4.0 X 0.030
1
CGHV31500F
1
J1,J2
J3
Q1
CGHV31500F Power Dissipation De-rating Curve
CGHV31500F Transient Power Dissipation De-Rating Curve
400
350
Power Dissipation (W)
300
Note 1
250
200
150
100
500 us 10 %
50
0
100 us 10 %
Maximum Case Temperature (°C)
0
25
50
75
100
125
150
175
200
225
250
Note 1. Area exceeds Maximum
Case Temperature
(See Page
Maximum
Case Temperature
(°C) 2).
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGHV31500F Rev 1.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV31500F-AMP Application Circuit Outline
CGHV31500F-AMP Application Circuit Schematic
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGHV31500F Rev 1.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGHV31500F (Package Type ­— 440217)
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGHV31500F Rev 1.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Part Number System
CGHV31500F
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Upper Frequency
1
Power Output
Package
Value
Units
3.1
GHz
500
W
Flange
-
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGHV31500F Rev 1.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGHV31500F
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGHV31500F-TB
CGHV31500F-AMP
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGHV31500F Rev 1.0 - PRELIMINARY
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGHV31500F Rev 1.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
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