DMG1013UWQ P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: SOT323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.006 grams (Approximate) Drain D Gate Gate Protection Diode ESD PROTECTED Top View G Source Equivalent Circuit S Top View Ordering Information (Note 5) Part Number DMG1013UWQ-7 DMG1013UWQ-13 Notes: Case SOT323 SOT323 Packaging 3000 / Tape & Reel 10000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year Code Month Code 2008 V Jan 1 … … Feb 2 DMG1013UWQ Document number: DS38559 Rev. 1 - 2 2015 C Mar 3 PA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) YM PA1 2016 D Apr 4 2017 E May 5 2018 F Jun 6 1 of 7 www.diodes.com 2019 G 2020 H 2021 I 2022 J 2023 K 2024 L Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D January 2016 © Diodes Incorporated DMG1013UWQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit VDSS VGSS -20 ±6 V V ID -0.82 -0.54 A IDM -3 A Symbol PD RθJA TJ, TSTG Value 0.31 398 -55 to +150 Unit W °C/W °C Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +85°C Steady State Continuous Drain Current (Note 6) Pulsed Drain Current (Note 7) Thermal Characteristics Characteristic Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) Operating and Storage Temperature Range Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Repetitive rating, pulse width limited by junction temperature. Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 - - -100 ±2.0 V nA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(TH) -0.5 - -1.0 V RDS(ON) - 0.5 0.7 1.0 0.75 1.05 1.5 Ω |Yfs| VSD - 0.9 -0.8 -1.2 S V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS = -10V, ID = -250mA VGS = 0V, IS = -150mA Ciss Coss Crss Qg Qgs Qgd - 59.76 12.07 6.36 622.4 100.3 132.2 5.1 8.1 28.4 20.7 - pF pF pF pC pC pC ns ns ns ns tD(ON) tR tD(OFF) tF Test Condition VDS = -16V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V, ID = -250mA VDD = -10V, VGS = -4.5V, RL = 47Ω, RG = 10Ω, ID = -200mA 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMG1013UWQ Document number: DS38559 Rev. 1 - 2 2 of 7 www.diodes.com January 2016 © Diodes Incorporated DMG1013UWQ 2.0 2 1.8 VGS = -4.0V 1.4 1.2 VGS = -2.5V VGS = -4.5V 1.0 VGS = -6.0V 0.8 VGS = -2.0V 0.6 0.2 85℃ 1.2 1 0.8 0.6 0.2 VGS = -1.5V 0 0.0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 2 VGS = -1.8V 1.8 1.6 1.4 1.2 VGS = -2.5V 1 0.8 0.6 VGS = -4.5V 0.4 0.5 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 150℃ 25℃ 1.4 0.4 0.4 0.2 0 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 5 1.8 1.6 ID = -430mA 1.4 1.2 1 0.8 ID = -150mA 0.6 0.4 0.2 0 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs Drain Current and Gate Voltage 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 6 1.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.2 1 2 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 125℃ -55℃ 1.6 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.6 VDS = -5V 1.8 VGS = -3.0V VGS = -4.5V 1 125℃ 0.8 150℃ 85℃ 0.6 25℃ 0.4 -55℃ 0.2 0 1.6 1.4 VGS = -2.5V, ID = -500mA 1.2 VGS = -4.5V, ID = -1A 1 0.8 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs Drain Current and Junction Temperature DMG1013UWQ Document number: DS38559 Rev. 1 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature January 2016 © Diodes Incorporated 1.5 1.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMG1013UWQ 1.2 VGS = -2.5V, ID = -500mA 0.9 0.6 VGS = -4.5V, ID = -1A 0.3 1 ID = -1mA 0.8 ID = -250μA 0.6 0.4 0 -50 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs Junction Temperature 100 f = 1MHz VGS = 0V 1.8 Ciss C, CAPACITANCE (pF) IS, SOURCE CURRENT (A) 1.6 1.4 1.2 1 0.8 0.6 TJ = TJ = 150oC 0.4 TJ = 125oC 0.2 10 Coss Crss 85oC TJ = 25oC TJ = -55oC 1 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs Current 1.5 0 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 910. Typical Total Capacitance Figure Typical Total Capacitance 20 10 RDS(ON) Limited PW =100µs ID, DRAIN CURRENT (A) PW =1ms 1 0.1 0.01 PW =10ms PW =100ms PW =1s PW =10s TJ(Max)=150℃ TC=25℃ Single Pulse DUT on 1*MRP Board VGS=-4.5V DC 0.001 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 11. SOA, Safe Operation Area DMG1013UWQ Document number: DS38559 Rev. 1 - 2 4 of 7 www.diodes.com January 2016 © Diodes Incorporated DMG1013UWQ 1 D=0.7 D=0.9 r(t), TRANSIENT THERMAL RESISTANCE D=0.5 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA (t)=r(t) * RθJA RθJA=380℃/W Duty Cycle, D=t1/t2 D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 12. Transient Thermal Resistance DMG1013UWQ Document number: DS38559 Rev. 1 - 2 5 of 7 www.diodes.com January 2016 © Diodes Incorporated DMG1013UWQ Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. SOT323 D SOT323 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 0.95 b 0.25 0.40 0.30 c 0.10 0.18 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC e1 1.20 1.40 1.30 F 0.375 0.475 0.425 L 0.25 0.40 0.30 a 8° All Dimensions in mm A2 c A1 a e L b E E1 e1 F Suggested Pad Layout Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. SOT323 X Y Y1 Dimensions C G X Y Y1 G Value (in mm) 0.650 1.300 0.470 0.600 2.500 C DMG1013UWQ Document number: DS38559 Rev. 1 - 2 6 of 7 www.diodes.com January 2016 © Diodes Incorporated DMG1013UWQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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