Diodes DMG1013UWQ P-channel enhancement mode mosfet Datasheet

DMG1013UWQ
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data












Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Case: SOT323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.006 grams (Approximate)




Drain
D
Gate
Gate
Protection
Diode
ESD PROTECTED
Top View
G
Source
Equivalent Circuit
S
Top View
Ordering Information (Note 5)
Part Number
DMG1013UWQ-7
DMG1013UWQ-13
Notes:
Case
SOT323
SOT323
Packaging
3000 / Tape & Reel
10000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
…
…
Feb
2
DMG1013UWQ
Document number: DS38559 Rev. 1 - 2
2015
C
Mar
3
PA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
YM
PA1
2016
D
Apr
4
2017
E
May
5
2018
F
Jun
6
1 of 7
www.diodes.com
2019
G
2020
H
2021
I
2022
J
2023
K
2024
L
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
January 2016
© Diodes Incorporated
DMG1013UWQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
VDSS
VGSS
-20
±6
V
V
ID
-0.82
-0.54
A
IDM
-3
A
Symbol
PD
RθJA
TJ, TSTG
Value
0.31
398
-55 to +150
Unit
W
°C/W
°C
Drain-Source Voltage
Gate-Source Voltage
TA = +25°C
TA = +85°C
Steady
State
Continuous Drain Current (Note 6)
Pulsed Drain Current (Note 7)
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Operating and Storage Temperature Range
Notes:
6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Repetitive rating, pulse width limited by junction temperature.
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20
-
-
-100
±2.0
V
nA
μA
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VGS(TH)
-0.5
-
-1.0
V
RDS(ON)
-
0.5
0.7
1.0
0.75
1.05
1.5
Ω
|Yfs|
VSD
-
0.9
-0.8
-1.2
S
V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -430mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
VDS = -10V, ID = -250mA
VGS = 0V, IS = -150mA
Ciss
Coss
Crss
Qg
Qgs
Qgd
-
59.76
12.07
6.36
622.4
100.3
132.2
5.1
8.1
28.4
20.7
-
pF
pF
pF
pC
pC
pC
ns
ns
ns
ns
tD(ON)
tR
tD(OFF)
tF
Test Condition
VDS = -16V, VGS = 0V,
f = 1.0MHz
VGS = -4.5V, VDS = -10V,
ID = -250mA
VDD = -10V, VGS = -4.5V,
RL = 47Ω, RG = 10Ω,
ID = -200mA
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMG1013UWQ
Document number: DS38559 Rev. 1 - 2
2 of 7
www.diodes.com
January 2016
© Diodes Incorporated
DMG1013UWQ
2.0
2
1.8
VGS = -4.0V
1.4
1.2
VGS = -2.5V
VGS = -4.5V
1.0
VGS = -6.0V
0.8
VGS = -2.0V
0.6
0.2
85℃
1.2
1
0.8
0.6
0.2
VGS = -1.5V
0
0.0
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
2
VGS = -1.8V
1.8
1.6
1.4
1.2
VGS = -2.5V
1
0.8
0.6
VGS = -4.5V
0.4
0.5
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
150℃
25℃
1.4
0.4
0.4
0.2
0
1.5
2
2.5
3
3.5
4
4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5
1.8
1.6
ID = -430mA
1.4
1.2
1
0.8
ID = -150mA
0.6
0.4
0.2
0
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current and
Gate Voltage
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
6
1.8
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
1.2
1
2
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
125℃
-55℃
1.6
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.6
VDS = -5V
1.8
VGS = -3.0V
VGS = -4.5V
1
125℃
0.8
150℃
85℃
0.6
25℃
0.4
-55℃
0.2
0
1.6
1.4
VGS = -2.5V, ID = -500mA
1.2
VGS = -4.5V, ID = -1A
1
0.8
0.6
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current and
Junction Temperature
DMG1013UWQ
Document number: DS38559 Rev. 1 - 2
3 of 7
www.diodes.com
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
January 2016
© Diodes Incorporated
1.5
1.2
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
DMG1013UWQ
1.2
VGS = -2.5V, ID = -500mA
0.9
0.6
VGS = -4.5V, ID = -1A
0.3
1
ID = -1mA
0.8
ID = -250μA
0.6
0.4
0
-50
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
2
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
100
f = 1MHz
VGS = 0V
1.8
Ciss
C, CAPACITANCE (pF)
IS, SOURCE CURRENT (A)
1.6
1.4
1.2
1
0.8
0.6
TJ =
TJ = 150oC
0.4
TJ = 125oC
0.2
10
Coss
Crss
85oC
TJ = 25oC
TJ = -55oC
1
0
0
0.3
0.6
0.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
1.5
0
5
10
15
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 910.
Typical
Total
Capacitance
Figure
Typical
Total
Capacitance
20
10
RDS(ON) Limited
PW =100µs
ID, DRAIN CURRENT (A)
PW =1ms
1
0.1
0.01
PW =10ms
PW =100ms
PW =1s
PW =10s
TJ(Max)=150℃
TC=25℃
Single Pulse
DUT on 1*MRP Board
VGS=-4.5V
DC
0.001
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 11. SOA, Safe Operation Area
DMG1013UWQ
Document number: DS38559 Rev. 1 - 2
4 of 7
www.diodes.com
January 2016
© Diodes Incorporated
DMG1013UWQ
1
D=0.7
D=0.9
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJA (t)=r(t) * RθJA
RθJA=380℃/W
Duty Cycle, D=t1/t2
D=Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 12. Transient Thermal Resistance
DMG1013UWQ
Document number: DS38559 Rev. 1 - 2
5 of 7
www.diodes.com
January 2016
© Diodes Incorporated
DMG1013UWQ
Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
SOT323
D
SOT323
Dim Min Max
Typ
A1 0.00 0.10
0.05
A2 0.90 1.00
0.95
b
0.25 0.40
0.30
c
0.10 0.18
0.11
D
1.80 2.20
2.15
E
2.00 2.20
2.10
E1 1.15 1.35
1.30
e
0.650 BSC
e1 1.20 1.40
1.30
F 0.375 0.475 0.425
L
0.25 0.40
0.30
a
8°
All Dimensions in mm
A2
c
A1
a
e
L
b
E
E1
e1
F
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
SOT323
X
Y
Y1
Dimensions
C
G
X
Y
Y1
G
Value
(in mm)
0.650
1.300
0.470
0.600
2.500
C
DMG1013UWQ
Document number: DS38559 Rev. 1 - 2
6 of 7
www.diodes.com
January 2016
© Diodes Incorporated
DMG1013UWQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
DMG1013UWQ
Document number: DS38559 Rev. 1 - 2
7 of 7
www.diodes.com
January 2016
© Diodes Incorporated
Similar pages