DMN33D8LV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT NEW PRODUCT ADVANCE INFORMATION V(BR)DSS Features and Benefits ID max TA = +25°C RDS(ON) max 3Ω @ VGS = 4.5V 30V 350 mA 7Ω @ VGS = 2.5V Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate to 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability Mechanical Data • • Applications Case: SOT563 Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 • Motor Control • Moisture Sensitivity: Level 1 per J-STD-020 • Power Management Functions • Terminal Connections: See Diagram • DC-DC Converters • • Backlighting Terminals: Finish – Matte Tin annealed over Copper leadframe Solderable per MIL-STD-202, Method 208 e3 • Weight: 0.006 grams (approximate) SOT563 ESD protected D2 G1 S1 S2 G2 D1 Equivalent Circuit Top View Ordering Information (Note 4) Part Number DMN33D8LV-7 DMN33D8LV-13 Notes: Case SOT563 SOT563 Packaging 3K/Tape & Reel 10K/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D2 G1 S1 33B = Product Type Marking Code YM = Date Code Marking Y = Year ex: V = 2008 M = Month ex: 9 = September 33B YM S2 Date Code Key Year Code Month Code 2011 Y Jan 1 G2 D1 2012 Z Feb 2 DMN33D8LV Document number: DS36892 Rev. 2 - 2 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D July 2014 © Diodes Incorporated DMN33D8LV Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic NEW PRODUCT NEW PRODUCT ADVANCE INFORMATION Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V ID 350 200 mA Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = +25°C TA = +70°C Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, duty cycle=1%) IS 0.5 A IDM 0.8 A Value Units Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C Total Power Dissipation (Note 5) PD TA = +70°C Steady State Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range 0.43 W 0.20 RθJA 288 °C/W TJ, TSTG -55 to 150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Typ Max BVDSS 30 — — V VGS = 0V, ID = 1mA IDSS — — 1 μA VDS = 30V, VGS = 0V IGSS — — ±10 μA VGS = ±16V, VDS = 0V VGS(th) 0.8 — 1.5 V VDS = 3V, ID = 100μA — — 2.4 VGS = 10V, ID = 250mA — — 3.0 VGS = 4.5V, ID = 250mA — — 5.0 — — 7.0 |Yfs| 10 — - mS VDS = 3V, ID = 10mA VSD — — 1.2 V VGS = 0V, IS = 115mA Input Capacitance Ciss — 48 — pF Output Capacitance Coss — 11 — pF Reverse Transfer Capacitance Crss — 8 — pF Total Gate Charge (VGS = 4.5V) Qg — 0.55 — nC Total Gate Charge (VGS = 10V) Qg — 1.23 — nC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage @TC = +25°C Unit Test Condition ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage RDS(ON) Ω VGS = 4.0V, ID = 10mA VGS = 2.5V, ID = 10mA DYNAMIC CHARACTERISTICS (Note 7) Gate-Source Charge Qgs — 0.14 — nC Gate-Drain Charge Qgd — 0.14 — nC Turn-On Delay Time tD(on) — 2.9 — ns Turn-On Rise Time tr — 2.6 — ns Turn-Off Delay Time tD(off) — 18.2 — ns tf — 13.6 — ns Turn-Off Fall Time Notes: VDS = 5V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 10V, ID = 250mA VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMN33D8LV Document number: DS36892 Rev. 2 - 2 2 of 6 www.diodes.com July 2014 © Diodes Incorporated DMN33D8LV 1.0 1 VGS = 10V VGS = 3.0V 0.9 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.7 VGS = 4.5V 0.6 VGS = 2.5V 0.5 0.4 0.3 0.2 VGS = 1.6V VGS = 1.8V VGS = 2.0V 0.6 0.5 0.4 0.3 TA = 125°C 0.1 0.0 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 2.5V 1.8 1.6 1.4 1.2 1 0.8 0.6 VGS = 4.0V 0.4 VGS = 4.5V VGS = 10V 0.2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 VGS = 10V ID = 500mA VGS = 4.5V ID = 300mA -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMN33D8LV Document number: DS36892 Rev. 2 - 2 TA = 150°C 0.2 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.7 0.1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT NEW PRODUCT ADVANCE INFORMATION 0.8 VGS = 4.0V 0.8 VDS = 5.0V 0.9 3 of 6 www.diodes.com TA = 85°C TA = 25°C T A = -55°C 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4 0.6 VGS = 4.5V 0.5 T A = 150°C TA = 125°C 0.4 TA = 85°C 0.3 TA = 25°C TA = -55°C 0.2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 1 0.5 VGS = 4.5V ID = 300mA 0.4 0.3 VGS = 10V ID = 500mA 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature July 2014 © Diodes Incorporated 1 1.8 0.9 1.6 0.8 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 2 1.4 ID = 1mA 1.2 ID = 250µA 1 0.8 0.6 0.4 0.2 0.6 TA = 150°C 0.5 0.4 TA = 125°C T A = 25°C 0.3 TA = 85°C 0.2 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 100 TA = -55°C 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 VGS GATE THRESHOLD VOLTAGE (V) f = 1MHz C iss 10 Coss C rss 1 0.7 0.1 0 -50 CT, JUNCTION CAPACITANCE (pF) 0 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT NEW PRODUCT ADVANCE INFORMATION DMN33D8LV 30 8 6 VDS = 10V ID = 250mA 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 1.4 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 289°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.000001 0.00001 DMN33D8LV Document number: DS36892 Rev. 2 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 11 Transient Thermal Resistance 4 of 6 www.diodes.com 10 100 1000 July 2014 © Diodes Incorporated DMN33D8LV Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. NEW PRODUCT NEW PRODUCT ADVANCE INFORMATION A B C D G M K H SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 C1 G Y X DMN33D8LV Document number: DS36892 Rev. 2 - 2 5 of 6 www.diodes.com July 2014 © Diodes Incorporated DMN33D8LV NEW PRODUCT NEW PRODUCT ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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