DMN601VKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: SOT563 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.006 grams (Approximate) SOT563 ESD Protected up to 2kV D2 G1 S1 S2 G2 D1 TOP VIEW Internal Schematic TOP VIEW Ordering Information (Note 5) Part Number DMN601VKQ-7 Notes: Case SOT563 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT563 G1 D2 S1 K7K = Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) K7K YM S2 Date Code Key Month Code Month Code G2 D1 2005 S … … 2015 C 2016 D 2017 E 2018 F 2019 G 2020 H 2021 I 2022 J 2023 K 2024 L Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 1 2 3 4 5 6 7 8 9 O N D DMN601VKQ Document number: DS38576 Rev. 1 - 2 1 of 6 www.diodes.com January 2016 © Diodes Incorporated DMN601VKQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Pulsed (Note 7) Drain Current (Note 6) Unit V V ID Value 60 ±20 305 800 Symbol PD RJA TJ, TSTG Value 250 500 -65 to +150 Unit mW °C/W °C mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Min Typ Max Unit BVDSS IDSS 60 250 500 100 V nA 1.0 1.6 2.5 V 2.0 3.0 Ω 1.4 ms V 50 25 5.0 pF pF pF IGSS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance |Yfs| VSD 0.5 284 Ciss Coss Crss RDS(ON) Forward Transfer Admittance Diode Forward Voltage (Note 8) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Symbol nA Test Condition VGS = 0V, ID = 10µA VDS = 50V, VGS = 0V VGS = 10V, VDS = 0V VGS = 5V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 0.5A VGS = 4.5V, ID = 200mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA VDS = 25V, VGS = 0V f = 1.0MHz 6. Device mounted on FR-4 PCB. 7. Pulse width 10s, Duty Cycle 1%. 8. Short duration pulse test used to minimize self-heating effect. DMN601VKQ Document number: DS38576 Rev. 1 - 2 2 of 6 www.diodes.com January 2016 © Diodes Incorporated ID, DRAIN CURRENT (A) DMN601VKQ VGS = 10V 8V 6V 5V 4V 3V 8V 6V 1.0 5V 0.8 4V 0.6 0.4 0.2 0 3V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2 10 VDS = 10V ID = 1mA RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE ( ) Pulsed 1.5 1 0.5 0 -50 -25 75 100 125 0 25 50 o C)) TCH, CHANNEL TEMPERATURE ((癈 Fig. 3 Gate Threshold Voltage vs. Channel Temperature 1 0.1 150 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 10 0 1 VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN601VKQ Document number: DS38576 Rev. 1 - 2 3 of 6 www.diodes.com January 2016 © Diodes Incorporated RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE () IDR, REVERSE DRAIN CURRENT (A) DMN601VKQ VGS = 0V Pulsed TA = 125°C TA = 150°C TA = 85°C TA = 25°C TA = 0°C TA = -25°C TA = -55°C 0 IDR, REVERSE DRAIN CURRENT (A) (s) |Y fs|, FORWARD TRANSFER ADMITTANCE (S) TCH, CHANNEL TEMPERATURE ( °C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature VGS = 10V o TA= 25癈C Pulsed VGS = 0V VGS = 10V Pulsed TA = 25°C TA = 150°C TA = -55°C TA = 85°C 1 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current DMN601VKQ Document number: DS38576 Rev. 1 - 2 4 of 6 www.diodes.com January 2016 © Diodes Incorporated DMN601VKQ Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. SOT563 A B C D G M K SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm H L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. SOT563 C2 Z C2 Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 C1 G Y X DMN601VKQ Document number: DS38576 Rev. 1 - 2 5 of 6 www.diodes.com January 2016 © Diodes Incorporated DMN601VKQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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