DISCRETE SEMICONDUCTORS DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 03 2000 May 23 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor FEATURES PINNING • High power gain PIN DESCRIPTION • Low noise figure BFG540 (Fig.1) Code: N37 • High transition frequency 1 collector • Gold metallization ensures excellent reliability. 2 base 3 emitter 4 emitter DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems. The transistors are mounted in plastic SOT143B and SOT143R packages. 2000 May 23 handbook, 2 columns 4 1 BFG540/X (Fig.1) Code: N43 1 collector 2 emitter 3 base 4 emitter Top view 3 2 MSB014 Fig.1 SOT143B. handbook, 2 columns 3 4 BFG540/XR (Fig.2) Code: N49 1 collector 2 emitter 3 base 4 emitter 2 Top view 2 1 MSB035 Fig.2 SOT143R. Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCES collector-emitter voltage RBE = 0 − − 15 V IC DC collector current − − 120 mA mW Ptot total power dissipation Ts ≤ 60 °C; note 1 − − 400 hFE DC current gain IC = 40 mA; VCE = 8 V; Tj = 25 °C 100 120 250 Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz − 0.5 − pF fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C − 18 − dB IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C − 11 − dB insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C 15 16 − dB noise figure Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C − 1.3 1.8 dB Γs = Γopt; IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C − 1.9 2.4 dB Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C − 2.1 − dB s 21 2 F LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage RBE = 0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 120 mA Ptot total power dissipation Ts ≤ 60 °C; note 1 − 400 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Ts ≤ 60 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. 2000 May 23 3 VALUE UNIT 290 K/W Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 8 V − − 50 hFE DC current gain IC = 40 mA; VCE = 8 V 60 120 250 Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 2 − Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz − 0.9 − pF Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz − 0.5 − pF fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz GUM maximum unilateral power gain (note 1) IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C − 18 − dB IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C − 11 − dB insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C 15 16 − dB noise figure Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C − 1.3 1.8 dB Γs = Γopt; IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C − 1.9 2.4 dB Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C − 2.1 − dB s 21 2 F nA pF PL1 output power at 1 dB gain compression IC = 40 mA; VCE = 8 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C − 21 − dBm ITO third order intercept point note 2 − 34 − dBm VO output voltage note 3 − 500 − mV d2 second order intermodulation distortion note 4 − −50 − dB Notes s 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log -------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 ) 2. VCE = 8 V; IC = 40 mA; RL = 50 Ω; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p − q) = 898 MHz and f(2q − p) = 904 MHz. 3. dim = −60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL = ZS = 75 Ω; Tamb = 25 °C; Vp = VO; Vq = VO −6 dB; Vr = VO −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p + q − r) = 793.25 MHz. 4. IC = 40 mA; VCE = 8 V; VO = 275 mV; Tamb = 25 °C; fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz. 2000 May 23 4 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor MBG249 600 MRA749 250 handbook, halfpage handbook, halfpage hFE Ptot (mW) 200 400 150 100 200 50 0 10−2 0 0 50 100 150 200 10−1 1 10 Ts ( o C) IC (mA) 102 VCE = 8 V; Tj = 25 °C. VCE ≤ 10 V. Fig.4 Fig.3 Power derating curve. MRA750 1 DC current gain as a function of collector current. MRA751 12 handbook, halfpage handbook, halfpage Cre (pF) fT (GHz) 0.8 VCE = 8 V 8 VCE = 4 V 0.6 0.4 4 0.2 0 10−1 0 0 4 8 VCB (V) 12 IC = 0; f = 1 MHz. f = 1 GHz; Tamb = 25 °C. Fig.5 Fig.6 Feedback capacitance as a function of collector-base voltage. 2000 May 23 5 1 10 IC (mA) 102 Transition frequency as a function of collector current. Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor MRA752 25 MRA753 25 handbook, halfpage handbook, halfpage gain (dB) gain (dB) MSG 20 20 Gmax GUM 15 15 Gmax 10 10 5 5 0 0 20 40 IC (mA) GUM 0 60 0 VCE = 8 V; f = 900 MHz. MSG = maximum stable gain; Gmax = maximum available gain; GUM = maximum unilateral power gain. 20 40 IC (mA) 60 VCE = 8 V; f = 2 GHz. Gmax = maximum available gain; GUM = maximum unilateral power gain. Fig.7 Gain as a function of collector current. Fig.8 Gain as a function of collector current. MRA755 MRA754 50 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) GUM GUM 40 40 MSG MSG 30 30 20 20 Gmax Gmax 10 0 10 102 103 f (MHz) 10 0 10 104 IC = 10 mA; VCE = 8 V. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. 103 f (MHz) 104 IC = 40 mA; VCE = 8 V. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.9 Gain as a function of frequency. 2000 May 23 102 Fig.10 Gain as a function of frequency. 6 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor MEA973 −20 dim MEA972 −20 d2 handbook, halfpage handbook, halfpage (dB) −30 (dB) −30 −40 −40 −50 −50 −60 −60 −70 10 20 30 40 50 −70 10 60 IC (mA) Fig.11 Intermodulation distortion as a function of collector current. MRA760 5 handbook, halfpage Fmin f = 900 MHz (dB) 4 1000 MHz Gass 3 2000 MHz 20 30 40 50 60 IC (mA) Fig.12 Second order intermodulation distortion as a function of collector current. MRA761 20 Gass handbook, halfpage (dB) 15 (dB) 4 5 Fmin IC = 10 mA 40 mA 20 Gass (dB) 15 Gass 10 3 10 5 2 5 2000 MHz 2 1000 MHz 900 MHz 500 MHz 1 Fmin 40 mA 0 0 1 10 IC (mA) 1 −5 102 10 mA 0 102 Fmin 0 103 f (MHz) −5 104 VCE = 8 V. VCE = 8 V. Fig.13 Minimum noise figure and associated available gain as functions of collector current. 2000 May 23 Fig.14 Minimum noise figure and associated available gain as functions of frequency. 7 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 180° 0.2 0 OPT 1 0.5 0.2 2 5 0° F = 1.5 dB F = 2 dB 0.2 0.4 5 Fmin = 1.3 dB 0 5 F = 3 dB 0.5 −135° 2 −45° 1 MRA762 1.0 −90° IC = 10 mA; VCE = 8 V; Zo = 50 Ω; f = 900 MHz. Fig.15 Noise circle figure. 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 G = 8 dB G = 9 dB Gmax = 11.4 dB G = 10 dB 0.4 5 MS 0.2 180° 0.2 0 0.5 1 2 5 0° 0 OPT Fmin = 2.1 dB 0.2 5 F = 2.5 dB F = 3 dB F = 4 dB −135° 0.5 2 −45° 1 MRA763 −90° IC = 10 mA; VCE = 8 V; Zo = 50 Ω; f = 2 GHz. Fig.16 Noise circle figure. 2000 May 23 8 1.0 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 3 GHz 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 5 0.2 40 MHz 0.5 −135° 2 −45° 1 MRA756 −90° IC = 40 mA; VCE = 8 V; Zo = 50 Ω. Fig.17 Common emitter input reflection coefficient (s11). 90° handbook, full pagewidth 135° 45° 40 MHz 3 GHz 180° 50 40 30 20 0° 10 −135° −45° −90° MRA757 IC = 40 mA; VCE = 8 V. Fig.18 Common emitter forward transmission coefficient (s21). 2000 May 23 9 1.0 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor 90° handbook, full pagewidth 135° 45° 3 GHz 40 MHz 180° 0.25 0.20 0.15 0.10 0° 0.05 −135° −45° −90° MRA758 IC = 40 mA; VCE = 8 V. Fig.19 Common emitter reverse transmission coefficient (s12). 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0.2 0 0.5 1 2 5 0° 0 3 GHz 40 MHz 0.2 −135° 0.5 2 5 −45° 1 MRA759 −90° IC = 40 mA; VCE = 8 V; Zo = 50 Ω. Fig.20 Common emitter output reflection coefficient (s22). 2000 May 23 10 1.0 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor PACKAGE OUTLINES Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT143B 2000 May 23 EUROPEAN PROJECTION 11 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Plastic surface mounted package; reverse pinning; 4 leads D SOT143R B E A X y HE v M A e bp w M B 3 4 Q A A1 c 2 1 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.55 0.25 0.45 0.25 0.2 0.1 0.1 OUTLINE VERSION SOT143R 2000 May 23 REFERENCES IEC JEDEC EIAJ SC-61B 12 EUROPEAN PROJECTION ISSUE DATE 97-03-10 99-09-13 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2000 May 23 13 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor NOTES 2000 May 23 14 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor NOTES 2000 May 23 15 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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