DMN24H3D5L N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION NEW PRODUCT Product Summary Features and Benefits V(BR)DSS RDS(ON) 240V 3.5Ω @ VGS = 10V 3.5Ω @ VGS = 4.5V 6.0Ω @ VGS = 3.3V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) • • • • • • ID TA = +25°C 0.48A 0.48A 0.37A Description Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching • • • Applications • • • • Case: SOT23 Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208 e3 Lead-Free Plating (Matte Tin Finish Annealed over Alloy 42 Leadframe). Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) • • performance, making it ideal for high efficiency power management applications. DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. • • D SOT23 D G S G S Top View Pin Configuration Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN24H3D5L-7 DMN24H3D5L-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT23 2H4 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: C = 2015) M = Month (ex: 9 = September) 2H4 Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 DMN24H3D5L Document number: DS37270 Rev. 3 - 2 Mar 3 2017 E Apr 4 2018 F May 5 Jun 6 1 of 6 www.diodes.com 2019 G Jul 7 2020 H Aug 8 Sep 9 2021 I Oct O 2022 J Nov N Dec D January 2015 © Diodes Incorporated DMN24H3D5L ADVANCED INFORMATION NEW PRODUCT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value VDSS 240 V VGSS ±20 V ID 0.48 0.39 A Pulsed Drain Current (10µs pulse, duty cycle ≤ 1%) IDM 1.9 A Maximum Body Diode Continuous Current (Note 6) IS 1.5 A Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C Steady State Units Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 6) Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Value 0.76 1.26 163 99 PD RθJA Operating and Storage Temperature Range RθJC 31 TJ, TSTG -55 to 150 Units W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 240 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1.0 µA VDS = 192V, VGS = 0V Gate-Body Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V VGS(th) 1.0 1.95 2.5 V 1.5 3.5 1.5 3.5 1.7 6.0 0.7 1.2 ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage RDS(ON) VSD VDS = VGS, ID = 250µA VGS = 10V, ID = 0.3A Ω VGS = 4.5V, ID = 0.2A VGS = 3.3V, ID = 0.1A V VGS = 0V, IS = 0.3A pF VDS = 25V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 192V, VGS = 10V, ID = 0.5A nS VDS = 60V, RL =200Ω VGS = 10V, RG = 25Ω DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 188 Output Capacitance Coss 11 Reverse Transfer Capacitance Crss 8 Gate Resistance Rg 3.86 Total Gate Charge Qg 6.6 Gate-Source Charge Qgs 0.8 Gate-Drain Charge Qgd 2.1 Turn-On Delay Time tD(on) 2.3 Turn-On Rise Time tr 2.0 tD(off) 21 tf 7.2 Turn-Off Delay Time Turn-Off Fall Time Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN24H3D5L Document number: DS37270 Rev. 3 - 2 2 of 6 www.diodes.com January 2015 © Diodes Incorporated DMN24H3D5L 1.0 1 VGS = 10V VGS = 4.0V VDS = 10V VGS = 4.5V 0.6 VGS = 3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.8 VGS = 3.5V VGS = 3.3V 0.4 VGS = 2.7V 0.2 0.6 0.4 T A = 150°C TA = 85°C T A = 125°C 0.2 TA = 25°C VGS = 2.5V 0 TA = -55°C 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.4 2.2 VGS = 3.3V 2 1.8 1.6 VGS = 4.5V VGS = 10V 1.4 1.2 0 0.2 0.4 0.6 0.8 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 2.6 2.4 VGS = 10V ID = 0.3A 2.2 2 1.8 VGS = 4.5V ID = 0.2A 1.6 0 1.4 1.2 1 0.8 0.6 0.4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCED INFORMATION NEW PRODUCT 0.8 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMN24H3D5L Document number: DS37270 Rev. 3 - 2 3 of 6 www.diodes.com 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4 VGS = 10V 4 TA = 150°C 3.5 TA = 125°C 3 T A = 85°C 2.5 2 T A = 25°C 1.5 1 T A = -55°C 0.5 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 1 3.8 3.4 VGS = 4.5V ID = 0.2A 3 2.6 VGS = 10V ID = 0.3A 2.2 1.8 1.4 1 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature January 2015 © Diodes Incorporated 1 2.2 0.8 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 2.5 ID = 1mA 1.9 ID = 250µA 1.6 1.3 1 -50 1000 VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) TA = 150°C 0.4 TA = 125°C T A = 85°C 0.2 0 TA = 25°C TA = -55°C 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 f = 1MHz Ciss 100 Coss 10 Crss 1 0.6 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 40 8 6 VDS = 192V ID = 0.5A 4 2 0 0 1 2 3 4 5 6 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 7 10 RDS(on) Limited ID, DRAIN CURRENT (A) ADVANCED INFORMATION NEW PRODUCT DMN24H3D5L 1 DC 0.1 PW = 10s PW = 1s PW = 100ms PW = 10ms 0.01 TJ(max) = 150°C TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 0.001 0.1 PW = 1ms PW = 100µs 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area DMN24H3D5L Document number: DS37270 Rev. 3 - 2 1000 4 of 6 www.diodes.com January 2015 © Diodes Incorporated DMN24H3D5L 1 D = 0.9 D = 0.7 ADVANCED INFORMATION NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 163°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 12 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMN24H3D5L Document number: DS37270 Rev. 3 - 2 Dimensions Z X Y C E Value (in mm) 2.9 0.8 0.9 2.0 1.35 E 5 of 6 www.diodes.com January 2015 © Diodes Incorporated DMN24H3D5L ADVANCED INFORMATION NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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