DMN2011UTS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V Features and Benefits RDS(ON) Max ID Max TC = +25°C 11mΩ @ VGS = 4.5V 21A 13mΩ @ VGS = 2.5V 20A Low Gate Threshold Voltage Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it Case: TSSOP-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.039 grams (Approximate) ideal for high efficiency power management applications. Battery Management Application Power Management Functions DC-DC Converters D TSSOP-8 D D D D S S S G ESD PROTECTED G Gate Protection Diode Pin1 Top View Equivalent Circuit Pin Out Bottom View S Ordering Information (Note 4) Part Number DMN2011UTS-13 Notes: Case TSSOP-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 = Manufacturer’s Marking N2011U = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 17 = 2017) WW = Week (01 to 53) N2011U YY WW 1 DMN2011UTS Document number: DS39579 Rev. 3 - 2 4 1 of 7 www.diodes.com July 2017 © Diodes Incorporated DMN2011UTS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C TC = +25°C TC = +70°C Steady State Value 20 ±12 9.0 7.2 ID Continuous Source-Drain Diode Current (Note 6) Pulsed Source-Drain Diode Current (10μs Pulse, Duty Cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH A IDM 21 17 70 IS 3 A ISM IAS EAS 25 18 17 A A mJ ID Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Unit V V A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range TA = +25°C Steady State TA = +25°C Steady State Steady State Symbol PD RJA PD RθJA RθJC TJ, TSTG Value 0.9 144 1.3 93 16 -55 to +150 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 — — — — — — 1 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 16V, VGS = 0V VGS = ±10V, VDS = 0V VGS(TH) 0.4 RDS(ON) — mΩ VSD — 1.0 11 13 25 50 1.2 V Static Drain-Source On-Resistance — 7.2 9.0 11.5 19.1 0.7 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 7A VGS = 2.5V, ID = 7A VGS = 1.8V, ID = 5A VGS = 1.5V, ID = 3A VGS = 0V, IS = 8.5A CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — — 2,248 295 265 1.5 24 56 3.5 5.1 3.6 2.6 21.6 13.5 12.8 6.9 — — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: V Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 10V, ID = 8.5A VDS = 10V, ID = 8.5A VGS = 4.5V, RG = 1.8Ω IF = 8.5A, di/dt = 210A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN2011UTS Document number: DS39579 Rev. 3 - 2 2 of 7 www.diodes.com July 2017 © Diodes Incorporated DMN2011UTS 30.0 30 VGS = 1.8V 25.0 25 VGS = 3.0V VGS = 4.5V 20.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V VGS = 2.0V VGS = 1.6V VGS = 10V 15.0 VGS = 1.5V 10.0 VGS = 1.4V 5.0 20 15 10 TJ = 150oC 5 VGS = 1.2V TJ = -55oC 0 0 0.5 1 1.5 2 2.5 3 0.6 VDS, DRAIN-SOURCE VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.016 VGS = 1.8V 0.012 VGS = 2.5V 0.01 0.008 VGS = 4.5V 0.006 0.004 0 5 10 15 20 25 TJ = 150oC 0.011 TJ = 125oC TJ = 85oC 0.009 0.008 TJ = 25oC 0.007 0.006 TJ = -55oC 0.005 1.6 1.8 2 0.03 0.02 0.01 ID = 5.0A 0 0 2 4 6 8 10 12 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V 0.01 1.4 ID = 7.0A 30 0.014 0.012 1.2 0.04 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.013 1 Figure 2. Typical Transfer Characteristic 0.018 0.014 0.8 VGS, GATE-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TJ = 25oC TJ = 125oC VGS = 1.3V 0.0 TJ = 85oC 1.8 1.6 VGS = 2.5V, ID = 7A 1.4 VGS = 4.5V, ID = 7A 1.2 1 VGS = 1.8V, ID = 5A 0.8 0.6 0.004 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMN2011UTS Document number: DS39579 Rev. 3 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature July 2017 © Diodes Incorporated 0.022 1.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMN2011UTS 0.02 VGS = 1.8V, ID = 5A 0.018 0.016 0.014 0.012 0.01 0.008 VGS = 2.5V, ID = 7A 0.006 VGS = 4.5V, ID = 7A 0.004 0.002 1 ID = 1mA 0.8 0.6 ID = 250µA 0.4 0.2 0 0 -50 -25 0 25 50 75 100 125 -50 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature -25 0 25 50 75 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 30 10000 f = 1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 25 IS, SOURCE CURRENT (A) 100 20 15 TJ = 150oC 10 TJ = 125oC TJ = 85oC 5 TJ = 25oC 1000 Coss Crss TJ = -55oC 0 0 Ciss 0.3 0.6 0.9 100 1.2 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 10 100 RDS(ON) Limited PW = 100µs ID, DRAIN CURRENT (A) 8 VGS (V) 6 4 VDS = 10V, ID = 8.5A 2 0 0 10 20 30 40 50 10 DC 1 0.1 PW = 10s PW = 1s TJ(Max) = 150℃ TC = 25℃ PW = 100ms Single Pulse PW = 10ms DUT on 1*MRP Board PW = 1ms VGS = 4.5V 0.01 0.01 0.1 1 10 100 Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area DMN2011UTS Document number: DS39579 Rev. 3 - 2 4 of 7 www.diodes.com July 2017 © Diodes Incorporated DMN2011UTS r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.9 D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA (t) = r(t) * RθJA RθJA = 140℃/W Duty Cycle, D = t1/t2 D=Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMN2011UTS Document number: DS39579 Rev. 3 - 2 5 of 7 www.diodes.com July 2017 © Diodes Incorporated DMN2011UTS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TSSOP-8 D See Detail C E E1 e c b Gauge plane a A2 A L D TSSOP-8 Dim Min Max Typ a 0.09 A 1.20 A1 0.05 0.15 A2 0.825 1.025 0.925 b 0.19 0.30 c 0.09 0.20 D 2.90 3.10 3.025 e 0.65 E 6.40 E1 4.30 4.50 4.425 L 0.45 0.75 0.60 All Dimensions in mm A1 Detail C Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TSSOP-8 Y Dimensions Value (in mm) X 0.45 Y 1.78 C1 7.72 C2 0.65 C3 4.16 G 0.20 X C3 C1 C2 DMN2011UTS Document number: DS39579 Rev. 3 - 2 G 6 of 7 www.diodes.com July 2017 © Diodes Incorporated DMN2011UTS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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