I C^ 20STE•RN AVE. • SPRIN GFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (21 2) 227-6005 FAX: (973) 376-8960 BF179A BF179B BF179C NPN SILICON ANNULAR TRANSISTORS . . . designed for high-frequency applications in color difference signal power stages of color television. • High Collector-Emitter Breakdown Voltage BVCER = 250 Vdc (Min) @ Ic » 4.0 mAdc - BF 179C NPN SILICON HIGH-FREQUENCY TRANSISTORS • Low Collector-Base Time Constant rbb'Cb'c " 100 ps (Max) @ Ic = 10 mAdc • Low Collector Cutoff Current — 'CBO " 2°0 "Adc (Max) @ VCR = '60 Vdc if MAXIMUM RATINGS Reting Collector-Emitter Voltage Symbol VCER Collector-Emitter Vortaga VCES Emitter-Baae Voltage VEB (RBE • 10 k ohm) BF179A BF179B BF17BC 160 220 260 16° 220 250 5.0 Operating Junction Temperature Range Tj - Storage Temperature Range TM, •• Vdc — 200 —•• 55 to + 200 Unit Vdc Vdc » °C •- °C THERMAL CHARACTERISTICS Charaoteriftic Symbol Max Unit Thermal Retinence, Junction to Case RTHJcate 45 °C/W Thermal Refinance, Junction to Ambient RTHJamb 2?0 °C/W I*"1_L —^ ¥9 i t i *•" rw~r LJjl-w MSI STYLE 1 Pinl. Emhltr 2. BM D-*" 0.711 (TIP y 3 C°"B1" ~\*s y^ >//X _L/^ ^ | _ 90" TO-39 All OiiWltiont in Millimtttrl •llfjij|e^^Wajajajajiajfjijfjfjfjfjfjfajij||tef NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors BF179A BF179B BF179C ELECTRICAL CHARACTERISTICS (TA - 25°C unl«»i otherwiM noted) Symbol Characteristic OFF CHARACTERISTICS Collector-Emitter Breekdown Voltage (1C - 4.0 mAdc, Rg- 1.0k ohm, RE - lOOohmi) ON CHARACTERISTICS DC Currant Gain dC - 15 mAdc, VCE - 10 Vdc) High Frequency Collector Emitter Saturation Voltage (lc - 20 mAdc, HL - 10 k ohms, f - 0.5 MHz, T j = 1 50'C) Short-Circuit Revert* Capacitance I VCE • 20 Vdc, lc • 1 -0 mAdc, f - 1 .0 MHz) Collector-Ban Time Constant (1C * 10 mAdc, VCB " 20 Vdc, f =• 2.5 MHz) Vde BVcER 160 220 250 — — — BVE80 5.0 - ICBO _ - 200 nAdc hFE 20 _ — — — 20 — Vdc *T 100 150 — MHz Cre ~~ 1.3 3.5 pF 'bb'Cb'c - - 100 P» BF179A BF179B BF179C Emitter-Bat* Breakdown Voltage HE - 100 nAdc, lc = 0) Collector Cutoff Currant (V C B-160Vdc, I E -0) DYNAMIC CHARACTERISTICS Current-G»m-B»ndwidth Product (lc - 10 mAdc, VCE - 20 Vdc, f - 500 KHz) Unit Min — — _ Vdc 'CE(Mt)HF