DMN1032UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features VDSS RDS(on) Qg Qgd ID 12V 18mΩ 3.2nC 0.3nC 4.8A LD-MOS technology with the lowest Figure of Merit: RDS(on) = 18mΩ to minimize on-state losses Vgs(th) = 0.8V typ. for a low turn-on potential CSP with Footprint 1.0mm × 1.0mm Qg = 3.2nC for ultra-fast switching Typ. @ VGS = 4.5V, TA = +25°C ADVANCED INFORMATION Description nd This 2 generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high Height = 0.62mm for Low Profile Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability efficiency power transfer. It uses Chip-Scale Package (CSP) to Mechanical Data increase power density by combining low thermal impedance with minimal RDS(on) per footprint area. Applications DC-DC Converters Battery Management Load Switch Case: U-WLB1010-4 Terminal Connections: See Diagram Below U-WLB1010-4 Equivalent Circuit Top View Ordering Information (Note 4) Part Number DMN1032UCB4-7 Notes: Case U-WLB1010-4 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information U-WLB1010-4 MW = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: B = 2014) M or M = Month (ex: 9 = September) Date Code Key Year Code 2014 B 2015 C 2016 D 2017 E 2018 F 2019 G 2020 H 2021 I 2022 J 2023 K 2024 L 2025 M Month Code Jan 1 Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D DMN1032UCB4-7 Document number: DS36643 Rev. 6 - 2 1 of 6 www.diodes.com January 2015 © Diodes Incorporated DMN1032UCB4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS Drain-Source Voltage ADVANCED INFORMATION Gate-Source Voltage Value 12 Unit V VGSS ±8 V Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID 4.8 3.8 A Continuous Drain Current (Note 5) VGS = 2.5V Steady State TA = +25°C TA = +70°C ID 4.5 3.6 A IDM 15 A Symbol PD Value 0.9 Unit W Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7) RθJA 138.81 °C/W Thermal Resistance, Junction to Case @TC = +25°C (Note 7) Power Dissipation (Note 5) RθJC 31.77 °C/W PD 1.16 W Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range RθJA 107.59 °C/W TJ, TSTG -55 to +150 °C Pulsed Drain Current (Note 6) Thermal Characteristics Characteristic Power Dissipation (Note 7) Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Min BVDSS 12 — — V VGS = 0V, ID = 250μA IDSS — — 1.0 µA VDS = 9.6V, VGS = 0V IGSS — — ±100 nA VGS = ±8V, VDS = 0V VGS(th) 0.4 0.8 1.2 V — 18 26 — 21 29 — 27 38 RDS(ON) Typ Max Unit Test Condition VDS = VGS, ID = 250μA VGS = 4.5V, ID =1A mΩ VGS = 2.5V, ID = 1A VGS = 1.8V, ID = 1A Forward Transfer Admittance |Yfs| — 8.1 — S VDS = 6V, ID = 1A Diode Forward Voltage VSD — 0.7 1.0 V VGS = 0V, IS = 1A Reverse Recovery Charge Qrr — 1.2 — nC Reverse Recovery Time DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance trr — 10.5 — ns Vdd = 5V, IF = 1A, di/dt =100A/μs Ciss — 325 450 Output Capacitance Coss — 183 250 Reverse Transfer Capacitance Crss — 31 47 Series Gate Resistance RG — 3.1 — Total Gate Charge Qg — 3.2 4.5 Gate-Source Charge Qgs — 0.4 — Gate-Drain Charge Qgd — 0.3 — Gate Charge at Vth Qg(th) — 0.2 — Turn-On Delay Time tD(on) — 3.3 10 Turn-On Rise Time tr — 5.6 — Turn-Off Delay Time tD(off) — 24 36 tf — 9 — Turn-Off Fall Time Notes: 2 pF VDS = 6V, VGS = 0V, f = 1.0MHz Ω f=1MHz,Vgs=0V, Vds=0V nC VGS = 4.5V, VDS = 6V, ID =1A ns VDS = 6V, VGS = 4.5V, RG = 20Ω, ID = 1A 2 5. Device mounted on FR4 material with 1-inch (6.45-cm ), 2-oz. (0.071-mm thick) Cu. 6. Repetitive rating, pulse width limited by junction temperature. 7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMN1032UCB4-7 Document number: DS36643 Rev. 6 - 2 2 of 6 www.diodes.com January 2015 © Diodes Incorporated DMN1032UCB4 10 10 VGS = 8.0V VDS = 5.0V VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8 VGS = 4.0V VGS = 1.5V VGS = 3.0V 6 VGS = 2.0V 4 6 4 TA = 150°C 2 2 TA = 125°C VGS = 1.2V TA = 85°C TA = 25°C TA = -55°C 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.04 0.036 VGS = 1.8V 0.032 0.028 0.024 VGS = 2.5V 0.02 VGS = 4.5V 0.016 0.012 0.008 0.004 0 2 4 6 8 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 10 1.8 VGS = 4.5V ID = 1.0A 1.6 VGS = 2.5V ID = 1.0A 1.4 VGS = 1.8V ID = 1.0A 1.2 1 0.8 0.6 0.4 -50 0 0.4 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 00 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCED INFORMATION 8 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMN1032UCB4-7 Document number: DS36643 Rev. 6 - 2 3 of 6 www.diodes.com 0.6 0.8 1 1.2 1.4 1.6 1.8 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 2 0.036 VGS = 4.5V TA = 150°C 0.032 TA = 125°C 0.028 TA = 85°C 0.024 TA = 25°C 0.02 0.016 TA = -55°C 0.012 0.008 0.004 1 2 3 4 5 6 7 8 9 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 10 0.05 0.045 VGS = 1.8V ID = 1.0A 0.04 0.035 0.03 0.025 0.02 0.015 VGS = 2.5V ID = 1.0A VGS = 4.5 V ID = 1.0A 0.01 0.005 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature January 2015 © Diodes Incorporated 10 1 8 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 1.2 ID = 1mA 0.8 ID = 250µA 0.6 6 T A = 150°C 4 TA = 125°C T A = -55°C 0 0.2 0.2 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10000 1000 TA = 125°C TA = 125°C 100 TA = 85°C TA = 25°C 10 1 1 100 4 ID, DRAIN CURRENT (A) 3.5 3 2.5 VDS = 6V ID = 1 A 2 1.5 1 0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN1032UCB4-7 Document number: DS36643 Rev. 6 - 2 3.5 4 of 6 www.diodes.com TA = 25°C TA = -55°C 0 4.5 TA = 85°C 10 2 4 6 8 10 12 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Drain-Source Leakage Current vs. Voltage 0 1.2 TA = 150°C T A = 150°C IGSS, LEAKAGE CURRENT (nA) IDSS, DRAIN LEAKAGE CURRENT (nA) TA = 25°C T A = 85°C 2 0.4 VGS GATE THRESHOLD VOLTAGE (V) ADVANCED INFORMATION DMN1032UCB4 0 1 2 3 4 5 6 7 8 VGS, GATE-SOURCE VOLTAGE (V) Figure 10 Gate-Source Leakage Current vs. Voltage RDS(on) Limited PW = 100µs 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 TJ(max) = +150°C TA = +25°C VGS = 4.5V Single Pulse DUT on 1 * MRP Board 0.01 0.01 PW = 1ms 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 January 2015 © Diodes Incorporated D = 0.9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE ADVANCED INFORMATION DMN1032UCB4 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 145°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. U-WLB1010-4 Dim Min Max Typ D 0.95 1.05 1.00 E 0.95 1.05 1.00 A 0.62 A2 0.38 A3 0.015 0.025 0.025 b 0.25 0.35 0.30 e 0.50 SD 0.25 SE 0.25 All Dimensions in mm E D A3 A2 4X-Ø b A SD SE e e Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. U-WLB1010-4 ØD C Dimensions C D Value (in mm) 0.50 0.25 C DMN1032UCB4-7 Document number: DS36643 Rev. 6 - 2 5 of 6 www.diodes.com January 2015 © Diodes Incorporated DMN1032UCB4 IMPORTANT NOTICE ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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