ON CPH5518-TL-E Bipolar transistor (-)50v, (-)3a, low vce(sat) complementary dual cph5 Datasheet

Ordering number : ENA0492A
CPH5518
Bipolar Transistor
http://onsemi.com
(–)50V, (–)3A, Low VCE(sat) Complementary Dual CPH5
Applications
•
Relay drivers, lamp drivers, motor drivers
Features
•
•
•
Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density
mounting
The CPH5518 consists of two chips encapsulated in a package which are equivalent to the CPH3116 and
the CPH3216, respectively
Ultrasmall package facilitate miniaturization in end products (0.9mm mounting height)
Specifications ( ): PNP
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Ratings
Unit
(--50)80
V
(--)50
V
VEBO
IC
(--)5
V
(--)1.0
A
ICP
IB
(--)3.0
A
(--)200
mA
When mounted on ceramic substrate (600mm2×0.8mm)1unit
0.9
W
When mounted on ceramic substrate (600mm2×0.8mm)
1.2
W
150
°C
--55 to +150
°C
Junction Temperature
PC
PT
Tj
Storage Temperature
Tstg
Total Power Dissipation
Conditions
VCBO
VCEO
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
unit : mm (typ)
7017A-009
• Package
: CPH5
• JEITA, JEDEC
: SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
5
4
CPH5518-TL-E
CPH5518-TL-H
0.15
2.9
3
Packing Type : TL
Marking
LOT No.
EN
0.05
1.6
2.8
0.2
0.6
Package Dimensions
0.9
0.2
0.6
TL
1
2
0.95
0.4
1 : Collector (NPN TR)
2 : Collector (PNP TR)
3 : Base (PNP TR)
4 : Emitter Common
5 : Base (NPN TR)
Electrical Connection
5
4
3
CPH5
1
Semiconductor Components Industries, LLC, 2013
September, 2013
2
92612 TKIM/22807EA TIIM TC-00000532 No. A0492-1/8
CPH5518
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Conditions
ICBO
IEBO
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
Gain-Bandwidth Product
hFE
fT
VCE=(--)2V, IC=(--)100mA
VCE=(--)10V, IC=(--)300mA
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
IC=(--)500mA, IB=(--)10mA
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
VBE(sat)
V(BR)CBO
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
V(BR)EBO
ton
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
tstg
tf
Fall Time
Ratings
min
200
(--)0.1
μA
(--)0.1
μA
560
MHz
(9)6
pF
(--230)130
(--380)190
mV
(--125)90
(--200)135
mV
(--)0.81
(--)1.2
(--50)80
IE=(--)10μA, IC=0A
See specified Test Circuit.
Unit
max
420
IC=(--)300A, IB=(--)6mA
IC=(--)500mA, IB=(--)10mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
typ
V
V
(--)50
V
(--)5
V
(36)38
ns
(173)332
ns
(28)40
ns
Switching Time Test Circuit
PW=20μs
D.C.≤1%
IB1
IB2
OUTPUT
INPUT
VR
50Ω
RB
+
100μF
VBE= --5V
RL=24Ω
+
470μF
VCC=25V
IC=20IB1= --20IB2=500mA
(For PNP, the polarity is reversed.)
Ordering Information
Package
Shipping
memo
CPH5518-TL-E
Device
CPH5
3,000pcs./reel
Pb Free
CPH5518-TL-H
CPH5
3,000pcs./reel
Pb Free and Halogen Free
No. A0492-2/8
CPH5518
IC -- VCE
--0.6
--4mA
0.8
--0.5
--2mA
--0.4
--0.3
--0.2
--0.1
4mA
0.5
2mA
0.4
0.3
0.2
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
IC -- VBE
--1.0
--0.9
0
[PNP]
--0.7
--0.6
--0.5
25°C
--0.1
Ta=7
5°C
--0.2
--0.6
--0.7
--25°C
--0.4
0.3
0.4
0.5
0.6
0.7
0.8
0.9
IC -- VBE
1.0
Collector Current, IC -- A
--0.8
0.2
Collector-to-Emitter Voltage, VCE -- V
1.0
IT11441
[NPN]
VCE=2V
0.9
--0.3
0.1
IT11440
VCE= --2V
--0.9
IB=0mA
0
--1.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
25°C
--25°
C
--0.1
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
0.6
5°C
0
0
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.8
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
1000
5
--0.9
5
DC Current Gain, hFE
--25°C
100
7
5
2
3
5
7 --1.0
2
IT01647
f T -- IC
[PNP]
0.8
hFE -- IC
[NPN]
VCE=2V
Ta=75°C
--25°C
25°C
2
3
5
7
0.1
2
3
5
7
7
5
3
2
100
7
5
1.0
2
3
IT01648
f T -- IC
5
Gain-Bandwidth Product, f T -- MHz
1000
1.0
IT11416
[NPN]
VCE=10V
3
2
0.9
Collector Current, IC -- A
VCE= --10V
3
3
2
--0.01
10
0.01
3
Collector Current, IC -- A
5
0.7
5
2
2
0.6
7
3
7 --0.1
0.5
100
2
5
0.4
3
3
3
0.3
Base-to-Emitter Voltage, VBE -- V
7
Ta=75°C
2
0.2
1000
VCE= --2V
25°C
10
--0.01
0.1
IT11415
3
2
0
--1.0
[PNP]
7
DC Current Gain, hFE
6mA
0.1
IB=0mA
0
Gain-Bandwidth Product, f T -- MHz
0.7
10mA
8mA
Ta=
7
Collector Current, IC -- A
0.9
30
--0.7
A
--10m
A
m
8
---6mA
--0.8
[NPN]
mA 2
0m
A
A
A
40m
mA --20m
1.0
50mA
0
--3
IC -- VCE
[PNP]
Collector Current, IC -- A
0m
--4
--50
--0.9
A
mA
--1.0
2
1000
7
5
3
2
100
7
5
3
2
3
5
7 --0.1
2
3
5
Collector Current, IC -- A
7 --1.0
2
3
IT01649
2
0.01
2
3
5
7
0.1
2
3
5
7
Collector Current, IC -- A
1.0
2
3
IT01650
No. A0492-3/8
CPH5518
Cob -- VCB
100
100
[NPN]
f=1MHz
7
7
Output Capacitance, Cob -- pF
5
Output Capacitance, Cob -- pF
Cob -- VCB
[PNP]
f=1MHz
3
2
10
7
5
3
5
3
2
10
7
5
3
2
2
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
5
5 7 0.1
5 7 --100
IT01651
2
3
5 7 1.0
2
3
5 7 10
2
VCE(sat) -- IC
[PNP]
3
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
--0.1
7
Ta
5
°C
=75
--25
3
°C
°C 25
2
--0.01
--0.01
2
3
5
7
2
--0.1
3
5
Collector Current, IC -- A
VCE(sat) -- IC
--1.0
--1.0
IT11417
0.1
7
5
5°C
7
Ta=
3
25
C
--25°
2
2
3
5
7
°C
2
0.1
3
[PNP]
VCE(sat) -- IC
5
IC / IB=50
5
3
2
--0.1
5°C
7
Ta=
7
°C
--25
5
2
C
25°
3
5
7
--0.1
2
3
5
Collector Current, IC -- A
VBE(sat) -- IC
--10
--1.0
IT11419
2
Ta= --25°C
7
75°C
5
25°C
3
2
--0.1
--0.01
2
3
5
7
--0.1
2
3
Collector Current, IC -- A
5
7
--1.0
IT01657
0.1
5°C
7
7
Ta=
5
°C
--25
25°
C
3
2
3
5
7
2
0.1
3
5
VBE(sat) -- IC
10
7 1.0
IT11420
[NPN]
IC / IB=50
7
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
2
Collector Current, IC -- A
[PNP]
5
3
2
0.01
7
IC / IB=50
7
--1.0
7 1.0
IT11418
[NPN]
IC / IB=50
2
--0.01
5
Collector Current, IC -- A
3
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
0.01
0.01
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
7
5 7 100
IT01652
[NPN]
IC / IB=20
3
3
Collector-to-Base Voltage, VCB -- V
5
3
2
1.0
Ta= --25°C
7
5
75°C
25°C
3
2
0.1
0.01
2
3
5
7
0.1
2
3
Collector Current, IC -- A
5
7 1.0
IT01658
No. A0492-4/8
CPH5518
ASO
5
[PNP / NPN]
Collector Current, IC -- A
IC=1A
1.0
7
5
3
0.1
7
5
2
10
op
er
2
3
s
10
DC
s
s
0μ
0μ
10
50
1m
2
0m
m
s
s
ati
on
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm2✕0.8mm)
For PNP, minus sign is omitted
0.01
0.1
2
3
5 7 1.0
2
3
5 7 10
2
Collector-to-Emitter Voltage, VCE -- V
[PNP / NPN]
Mounted on a ceramic board (600mm2✕0.8mm)
1.2
Collector Dissipation, PC -- W
3
PC -- Ta
1.4
ICP=3A
1.0
0.9
To
tal
0.8
1u
0.6
nit
di
ss
ip
ati
on
0.4
0.2
0
3
5 7
IT09272
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT11421
No. A0492-5/8
CPH5518
Embossed Taping Specification
CPH5518-TL-E, CPH5518-TL-H
No. A0492-6/8
CPH5518
Outline Drawing
CPH5518-TL-E, CPH5518-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No. A0492-7/8
CPH5518
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PS No. A0492-8/8
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