CS3D, CS3G, CS3J, CS3K, CS3M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated pellet chip junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AB (SMC) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 100 A IR 5.0 μA VF at IF = 3.0 A (TA = 125 °C) 0.85 V TJ max. 150 °C Package DO-214AB (SMC) Diode variations Single die For use in general purpose rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, and telecommunication. MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Average forward rectified current Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range VRRM CS3D CS3G CS3J CS3K CS3M D G J K M 200 400 600 800 1000 UNIT V (1) 2.0 IF(AV) (2) 3.0 IFSM 100 A TJ, TSTG -55 to +150 °C IF(AV) A Notes (1) Free air, mounted on recommended copper pad area (2) Mounted on 14 mm x 14 mm copper pad areas Revision: 25-Jul-16 Document Number: 87637 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CS3D, CS3G, CS3J, CS3K, CS3M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.5 A Maximum instantaneous forward voltage SYMBOL TA = 25 °C IF = 3.0 A VF (1) IF = 1.5 A TA = 125 °C IF = 3.0 A TA = 25 °C TYP. MAX. 0.90 - 0.95 1.2 0.77 - 0.85 1.05 - 10 - 500 UNIT V Maximum DC reverse current at rated DC blocking voltage Rated VR Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.8 - μs Typical junction capacitance 4.0 V, 1 MHz CJ 26 - pF TA = 125 °C IR (2) μA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance CS3D CS3G CS3J RJA(1) 80 RJM (2) 13 CS3K CS3M UNIT °C/W Notes (1) Free air, mounted on recommended copper pad area; thermal resistance R JA - junction to ambient (2) Mounted on 14 mm x 14 mm copper pad areas, R JM - junction to mount at the terminal ORDERING INFORMATION (Example) PREFERRED P/N CS3J-E3/I UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.211 I 3500 13" diameter plastic tape and reel Revision: 25-Jul-16 Document Number: 87637 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CS3D, CS3G, CS3J, CS3K, CS3M www.vishay.com Vishay General Semiconductor 3.5 Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 3.0 RthJM = 13 ƱC/W, mounted on 14 mm x 14 mm copper pad areas 2.5 2.0 1.5 RthJA = 80 ƱC/W 1.0 0.5 0 0 25 50 75 100 125 1000 TJ = 150 °C 100 TJ = 125 °C 10 TJ = 75 °C 1 TJ = 25 °C 0.1 0.01 10 150 Mount Temperature (°C) 20 30 40 50 60 Fig. 1 - Maximum Forward Current Derating Curve 90 100 100 D = 0.5 D = 0.3 3.2 2.8 D = 0.2 D = 1.0 2.4 D = 0.1 2.0 1.6 1.2 T 0.8 0.4 D = tp/T Junction Capacitance (pF) D = 0.8 Average Power Loss (W) 80 Fig. 4 - Typical Reverse Leakage Characteristics 3.6 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 tp 0.0 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1 Average Forward Current (A) 10 TJ = 150 °C 1 TJ = 125 °C TJ = 75 °C TJ = 25 °C 0.01 0.2 0.4 0.6 0.8 1.0 1.2 100 Fig. 5 - Typical Junction Capacitance Transient Thermal Impedance (°C/W) 100 0.1 10 Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Instantaneous Forward Current (A) 70 Percent of Rated Peak Reverse Voltage (%) 1.4 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 100 Junction to Ambient 10 1 0.01 0.1 1 10 100 1000 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 25-Jul-16 Document Number: 87637 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CS3D, CS3G, CS3J, CS3K, CS3M www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 25-Jul-16 Document Number: 87637 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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