INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD646F DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD645F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IB Base Current-Continuous -0.15 A PC TJ Tstg Collector Power Dissipation @ Ta=25℃ 20 Collector Power Dissipation @ TC=25℃ 32 Junction Temperature 150 ℃ -65~150 ℃ Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.6 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 6.3 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD646F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -50mA -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -50mA -3.0 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -3V -2.5 V VCB= -60V; IE= 0 -0.1 ICBO CONDITIONS MIN TYP. MAX -60 UNIT V Collector Cutoff Current mA VCB= -40V; IE= 0; TC= 150℃ -2.0 ICEO Collector Cutoff Current VCE= -30V; IB= 0 -0.5 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 mA hFE-1 DC Current Gain IC= -0.5A ; VCE= -3V hFE-2 DC Current Gain IC= -3A ; VCE= -3V hFE-3 DC Current Gain IC= -8A ; VCE= -3V isc website：www.iscsemi.com 2 2700 750 2000 isc & iscsemi is registered trademark