DMN1019USN 12V N-CHANNEL ENHANCEMENT MODE MOSFET Features V(BR)DSS RDS(ON) MAX 12V 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V • ID TA = +25°C 9.3A 8.5A 7.9A 6.9A 4.6A This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Load Switch • DC-DC Converters • Power Management Functions ESD Protected Gate • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description • Low On-Resistance • • Case: SC59 • Case Material – Molded Plastic. UL Flammability Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish - Matte Tin Solderable per MIL-STD-202, • Method 208 e3 Terminal Connections: See Diagram • Weight: 0.014 grams (approximate) SC59 D D G Gate Protection Diode S G ESD PROTECTED Top View Pin Configuration Top View S Equivalent Circuit Ordering Information (Note 4) Part Number DMN1019USN-7 DMN1019USN-13 Notes: Case SC59 SC59 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information N7 Date Code Key Year Code Month Code 2013 A Jan 1 2014 B Feb 2 DMN1019USN Document number: DS36999 Rev. 2 - 2 Mar 3 N7 = Product Type Marking Code YM = Date Code Marking Y = Year ex: A = 2013 M = Month ex: 9 = September YM NEW PRODUCT Product Summary 2015 C Apr 4 2016 D May 5 Jun 6 1 of 6 www.diodes.com 2017 E Jul 7 2018 F Aug 8 Sep 9 2019 G Oct O 2020 H Nov N Dec D May 2014 © Diodes Incorporated DMN1019USN Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 4.5V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<10s ID Units V V A 11 8.8 70 2 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode Forward Current (Note 6) NEW PRODUCT Value 12 ±8 9.3 7.4 IDM IS A A A Thermal Characteristics Characteristic Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD RθJA PD RθJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RθJC TJ, TSTG Value 0.68 0.4 160 115 1.2 0.83 96 68 18 -55 to +150 Units W °C/W °C/W W °C/W °C/W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 12 — — — — — — 1 ±2 V µA µA VGS = 0V, ID = 250µA VDS =12V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) RDS(ON) 0.53 7 8 10 14 28 28 0.8 0.8 10 12 14 18 41 — 1.2 V Static Drain-Source On-Resistance 0.35 — — — — — — — VDS = VGS, ID = 250µA VGS = 4.5V, ID = 9.7A VGS = 2.5V, ID = 9A VGS = 1.8V, ID = 8.1A VGS = 1.5V, ID = 4.5A VGS = 1.2V, ID = 2.4A VDS = 4V, ID = 9.7A VGS = 0V, IS = 10A — — — — — — — — — — — — 2426 396 375 1.1 50.6 27.3 3.4 5.2 7.6 22.2 57.6 16.8 — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 8V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time Notes: IYfsI VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tD(OFF) tr tf mΩ S V Test Condition pF pF pF Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 4V, ID = 10A ns ns ns ns VDD = 4V, VGEN = 5V, ID = 10A, RG = 1Ω, RL = 0.4Ω VDS = 10V, VGS = 0V, f = 1MHz 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation PD is based on t<10s RθJA. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation PD is based on t<10s RθJA. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN1019USN Document number: DS36999 Rev. 2 - 2 2 of 6 www.diodes.com May 2014 © Diodes Incorporated DMN1019USN 20.0 20 VGS = 8.0V VDS = 5.0V 18 VGS = 3.0V 16 VGS =1.2V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.0V VGS = 1.5V 12.0 8.0 4.0 14 12 10 8 T A = 150°C 6 T A = 125°C 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.016 0.015 0.014 VGS = 1.5V 0.013 0.012 0.011 0.01 VGS = 2.5V 0.009 VGS = 4.5V 0.008 0.007 0.006 2 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage TA = -55°C 0 0.2 5 0.4 0.6 0.8 1 1.2 1.4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 1.6 0.03 ID = 9.7A 0.025 ID = 8.1A 0.02 ID = 4.5A 0.015 0.01 0.005 20 0 0 1 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 8 1.6 0.015 VGS = 4.5V 0.014 VGS = 2.5V ID = 9A RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.0 TA = 85°C TA = 25°C 4 VGS = 1.0V 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT 16.0 TA = 150°C 0.013 T A = 125°C 0.012 T A = 85°C 0.011 0.01 TA = 25°C 0.009 0.008 T A = -55°C 0.007 1.4 VGS = 4.5V ID = 9.7A 1.2 VGS = 1.5V ID = 4.5A 1 0.8 0.006 0.005 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN1019USN Document number: DS36999 Rev. 2 - 2 20 3 of 6 www.diodes.com 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature May 2014 © Diodes Incorporated VGS = 1.5V ID = 4.5A 0.018 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.8 0.02 0.016 0.014 VGS = 2.5V ID = 9A 0.012 0.01 VGS = 4.5V ID = 9.7A 0.008 0.006 0.6 0.4 ID = 1mA ID = 250µA 0.2 0.004 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 10000 20 18 CT, JUNCTION CAPACITANCE (pF) f = 1MHz IS, SOURCE CURRENT (A) 16 14 12 TA = 150°C 10 TA = 125°C 8 TA = 25°C 6 TA = 85°C 4 T A = -55°C C iss 1000 Crss Coss 2 0 0 100 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 8 100 6 10 ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMN1019USN VDS = 4V ID = 10A 4 2 0 0 5 10 15 20 25 30 35 40 45 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN1019USN Document number: DS36999 Rev. 2 - 2 50 4 of 6 www.diodes.com 0 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 12 RDS(on) Limited DC PW = 10s PW = 1s 1 PW = 100ms PW = 10ms PW = 1ms 0.1 PW = 100µs T J(max) = 150°C T A = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 May 2014 © Diodes Incorporated DMN1019USN r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 60°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SC59 Min Max Typ 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 G 1.90 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 N 0.70 0.80 0.75 0° 8° α All Dimensions in mm Dim A B C G H K M N J L D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMN1019USN Document number: DS36999 Rev. 2 - 2 Dimensions Value (in mm) Z 3.4 X 0.8 Y 1.0 2.4 C 1.35 E E 5 of 6 www.diodes.com May 2014 © Diodes Incorporated DMN1019USN IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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