TO -22 0F BYC15X-600P Hyperfast power diode 9 May 2014 Product data sheet 1. General description Hyperfast power diode in a SOD113A (2-lead TO-220-F) plastic package. 2. Features and benefits • • • • • • Fast switching Isolated plastic package Low leakage current Low reverse recovery current Low thermal resistance Reduces switching losses in associated MOSFET or IGBT 3. Applications • • • Active PFC in air conditioner High frequency switched-mode power supplies Continuous Current Mode (CCM) Power Factor Correction (PFC) 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRRM repetitive peak reverse voltage IF(AV) average forward current Conditions Min Typ Max Unit - - 600 V δ = 0.5; square-wave pulse; Fig. 1; Fig. 2 - - 15 A IF = 15 A; Tj = 150 °C; Fig. 5 - 1.4 2 V IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; - 13 18 ns Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time Tj = 25 °C; Fig. 6 Scan or click this QR code to view the latest information for this product BYC15X-600P NXP Semiconductors Hyperfast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Simplified outline cathode Graphic symbol mb K A 001aaa020 2 A anode mb n.c. mounting base; isolated 1 2 TO-220F (SOD113A) 6. Ordering information Table 3. Ordering information Type number Package BYC15X-600P Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220F "full pack" SOD113A 7. Marking Table 4. Marking codes Type number Marking code BYC15X-600P BYC15X-600P 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Min Max Unit repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage DC - 600 V IF(AV) average forward current δ = 0.5; square-wave pulse; Fig. 1; Fig. 2 - 15 A IFRM repetitive peak forward current δ = 0.5; tp = 25 µs; square-wave pulse - 30 A BYC15X-600P Product data sheet Conditions All information provided in this document is subject to legal disclaimers. 9 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2/9 BYC15X-600P NXP Semiconductors Hyperfast power diode Symbol Parameter Conditions Min Max Unit IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave - 180 A - 200 A pulse; Fig. 3 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 3 Tstg storage temperature -65 175 °C Tj junction temperature - 175 °C aaa-010684 50 Ptot (W) 40 a = 1.57 Ptot (W) 0.5 30 aaa-010685 40 δ=1 30 2.2 1.9 2.8 0.2 4.0 20 0.1 20 10 10 0 Fig. 1. 0 5 10 15 0 20 25 IF(AV) (A) Forward power dissipation as a function of average forward current; square waveform; maximum values Fig. 2. 0 5 10 IF(AV) (A) 15 Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values aaa-010687 104 IFSM (A) 103 102 IF 10 10-5 Fig. 3. IFSM t tp Tj(init) = 25 °C max 10-4 10-3 tp (s) 10-2 Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; maximum values BYC15X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 9 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3/9 BYC15X-600P NXP Semiconductors Hyperfast power diode 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink with heatsink compound; Fig. 4 - - 4.5 K/W Rth(j-a) thermal resistance from junction to ambient in free air - 55 - K/W aaa-010690 10 Zth(j-h) (K/W) 1 10-1 δ = 0.5 δ = 0.3 δ = 0.1 10-2 δ = 0.05 δ = 0.02 δ = 0.01 single pulse 10-3 10-4 10-6 Fig. 4. 10-5 10-4 P δ= tp 10-3 10-2 10-1 tp T t T 1 10 tp (s) Transient thermal impedance from junction to heatsink as a function of pulse duration 10. Isolation characteristics Table 7. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free - - 2500 V Cisol isolation capacitance f = 1 MHz; from cathode to external heatsink - 10 - pF Conditions Min Typ Max Unit IF = 15 A; Tj = 25 °C; Fig. 5 - 2.7 3.2 V 11. Characteristics Table 8. Characteristics Symbol Parameter Static characteristics VF forward voltage BYC15X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 9 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4/9 BYC15X-600P NXP Semiconductors Hyperfast power diode Symbol Parameter IR reverse current Conditions Min Typ Max Unit IF = 15 A; Tj = 150 °C; Fig. 5 - 1.4 2 V VR = 600 V; Tj = 25 °C - - 10 µA VR = 600 V; Tj = 150 °C - - 1 mA IF = 15 A; VR = 200 V; dIF/dt = 200 A/ - 30 - nC - 115 - nC - 13 18 ns - 22 - ns - 28 - ns - 39 - ns - 2.1 - A - 5.8 - A Dynamic characteristics Qr recovered charge µs; Tj = 25 °C; Fig. 6 IF = 15 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 6 trr IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; reverse recovery time Tj = 25 °C; Fig. 6 IF = 15 A; VR = 400 V; dIF/dt = 500 A/ µs; Tj = 25 °C; Fig. 6 IF = 15 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 6 IF = 15 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 6 IRM IF = 15 A; VR = 200 V; dIF/dt = 200 A/ peak reverse recovery current µs; Tj = 25 °C; Fig. 6 IF = 15 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 6 aaa-010688 30 IF dlF dt IF (A) trr 20 (1) (2) time (3) 25 % 10 Qr IR 0 Fig. 5. 100 % IRM 003aac562 0 1 2 3 VF (V) 4 Fig. 6. Reverse recovery definitions; ramp recovery Forward current as a function of forward voltage BYC15X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 9 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5/9 BYC15X-600P NXP Semiconductors Hyperfast power diode 12. Package outline Plastic single-ended package; isolated heasink mounted; 1 mounting hole; 2-lead TO-220F 'full pack' SOD113A A A1 E z(2) P q m T(4) D HE j(3) L1(1) k(3) Q L 1 b1 2 c w b e 0 5 10 mm scale Dimensions (mm are the original dimensions) Unit max nom min mm A A1 b b1 c D E e 4.6 3.1 0.9 1.1 0.7 15.8 10.3 4.0 2.5 0.7 0.9 0.4 15.2 9.7 HE max 5.08 19.0 j(3) k(3) L L1(1) m P Q 2.7 0.8 14.4 3.3 6.5 3.2 2.8 1.7 0.4 13.5 2.8 6.3 3.0 2.3 q T(4) W z(2) 2.6 2.55 0.4 0.8 Note 1. Terminals are uncontrolled within zone L1. 2. z is depth of T. 3. Dot lines area designs may vary. 4. Eject pin mark is for reference only. Outline version SOD113A Fig. 7. sod113a_po References IEC JEDEC JEITA European projection Issue date 14-01-14 14-04-10 2 LEADS TO220F Package outline TO-220F (SOD113A) BYC15X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 9 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6/9 BYC15X-600P NXP Semiconductors Hyperfast power diode In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 13. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Isolation characteristics ........................................4 11 Characteristics ....................................................... 4 12 Package outline ..................................................... 6 13 13.1 13.2 13.3 13.4 Legal information ...................................................7 Data sheet status ................................................. 7 Definitions .............................................................7 Disclaimers ...........................................................7 Trademarks .......................................................... 8 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 9 May 2014 BYC15X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 9 May 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9/9