AP2323AGN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 1.5V Gate Drive
D
▼ Small Package Outline
▼ Surface Mount Device
S
▼ RoHS Compliant & Halogen-Free
SOT-23
BVDSS
-20V
RDS(ON)
38mΩ
ID
-5A
G
D
Description
AP2323A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The special design SOT-23 package with good thermal
performance is widely preferred for all commercial-industrial surface
mount applications using infrared reflow technique and suited for
voltage conversion or switch applications.
G
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage
+8
V
3
ID@TA=25℃
Drain Current , VGS @ 4.5V
-5
A
ID@TA=70℃
3
-4
A
Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
-20
A
PD@TA=25℃
Total Power Dissipation
1.38
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
201403051
AP2323AGN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-20
-
-
V
VGS=-4.5V, ID=-4A
-
31
38
mΩ
VGS=-2.5V, ID=-3A
-
37
50
mΩ
VGS=-1.8V, ID=-1A
-
40
64
mΩ
VGS=-1.5V, ID=-0.8A
-
50
90
mΩ
-0.3
-0.5
-1
V
-
17
-
S
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-5V, ID=-4A
IDSS
Drain-Source Leakage Current
VDS=-16V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-4A
-
19
30.4
nC
Qgs
Gate-Source Charge
VDS=-10V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4
-
nC
td(on)
Turn-on Delay Time
VDS=-10V
-
9
-
ns
tr
Rise Time
ID=-1A
-
14
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
60
-
ns
tf
Fall Time
VGS=-5V
-
30
-
ns
Ciss
Input Capacitance
VGS=0V
-
1650 2640
pF
Coss
Output Capacitance
VDS=-10V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
145
-
pF
Rg
Gate Resistance
f=1.0MHz
-
10
20
Ω
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=-1.2A, VGS=0V
Max. Units
-1.2
V
trr
Reverse Recovery Time
IS=-4A, VGS=0V,
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
5
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10sec ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2323AGN-HF
20
20
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.5V
-2.0V
V G = -1.5V
-ID , Drain Current (A)
16
12
T A = 150 o C
16
-ID , Drain Current (A)
T A =25 o C
8
4
12
8
4
0
0
0
2
4
6
8
0
2
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
50
I D = -0.8A
I D = -4A
V GS = -4.5V
T A =25 o C
1.4
Normalized RDS(ON)
46
RDS(ON) (Ω )
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
65mΩ -2.5V
-2.0V
V G = -1.5V
42
38
1.2
1
0.8
34
0.6
30
0.5
1.5
2.5
3.5
-50
4.5
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
8
I D = -250uA
1.6
T j =150 o C
4
Normalized VGS(th)
-IS(A)
6
T j =25 o C
1.2
0.8
2
0.4
2.01E+08
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
T j , Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2323AGN-HF
f=1.0MHz
6
2400
I D = -4A
V DS = -10V
2000
4
3
C iss
65mΩ
1600
C (pF)
-VGS , Gate to Source Voltage (V)
5
1200
2
800
1
400
C oss
C rss
0
0
0
10
20
1
30
5
9
13
17
21
25
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
-ID (A)
10
Operation in this
area limited by
RDS(ON)
Normalized Thermal Response (Rthja)
DUTY=0.5
100us
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 270℃/W
0.001
0.01
0.1
1
10
0.0001
100
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
6
V DS = -5V
5
-ID , Drain Current (A)
-ID , Drain Current (A)
16
12
8
T j =150 o C
o
T j =25 C
4
4
3
2
1
T j = -40 o C
0
0
0
1
2
3
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
4
25
50
75
100
125
150
o
T A , Ambient Temperature ( C )
Fig 12. Drain Current v.s. Ambient
Temperature
4