Siemens C67070-A2515-A67 Igbt power module (power module 3-phase full-bridge including fast free-wheel diodes) Datasheet

BSM50GD60DN2E3226
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
• E3226: long terminals, limited current per terminal
Type
VCE
IC
Package
Ordering Code
BSM50GD60DN2E3226
600V
50A
ECONOPACK 2
C67070-A2515-A67
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
Collector-gate voltage
VCGR
RGE = 20 kΩ
Values
600
Unit
V
600
Gate-emitter voltage
VGE
DC collector current
IC
TC = 25 °C
± 20
A
50
Pulsed collector current, tp = 1 ms
ICpuls
TC = 25 °C
100
Ptot
Power dissipation per IGBT
TC = 25 °C
W
200
Chip temperature
Tj
Storage temperature
Tstg
Thermal resistance, chip case
RthJC
≤ 0.6
Diode thermal resistance, chip case
RthJCD
≤ 1.5
Insulation test voltage, t = 1min.
Vis
2500
Vac
Creepage distance
-
16
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
IEC climatic category, DIN IEC 68-1
-
Semiconductor Group
1
+ 150
°C
-55 ... + 150
K/W
sec
55 / 150 / 56
Jan-10-1997
BSM50GD60DN2E3226
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 1 mA
V
4.5
5.5
6.5
VGE = 15 V, IC = 50 A, Tj = 25 °C
-
2.1
2.7
VGE = 15 V, IC = 50 A, Tj = 125 °C
-
2.2
2.8
Collector-emitter saturation voltage
Zero gate voltage collector current
VCE(sat)
ICES
VCE = 600 V, VGE = 0 V, Tj = 25 °C
Gate-emitter leakage current
mA
-
-
1.5
IGES
VGE = 25 V, VCE = 0 V
nA
-
-
100
AC Characteristics
Transconductance
gfs
VCE = 20 V, IC = 50 A
Input capacitance
10
nF
-
2.8
-
-
0.3
-
-
0.2
-
Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
-
Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
-
Ciss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
S
2
Jan-10-1997
BSM50GD60DN2E3226
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
ns
VCC = 300 V, VGE = 15 V, IC = 50 A
RGon = 22 Ω
Rise time
-
60
-
-
80
-
-
330
-
-
550
-
tr
VCC = 300 V, VGE = 15 V, IC = 50 A
RGon = 22 Ω
Turn-off delay time
td(off)
VCC = 300 V, VGE = -15 V, IC = 50 A
RGoff = 22 Ω
Fall time
tf
VCC = 300 V, VGE = -15 V, IC = 50 A
RGoff = 22 Ω
Free-Wheel Diode
Diode forward voltage
VF
V
IF = 50 A, VGE = 0 V, Tj = 25 °C
-
2
-
IF = 50 A, VGE = 0 V, Tj = 125 °C
-
1.8
-
Reverse recovery time
trr
µs
IF = 50 A, VR = -300 V, VGE = 0 V
diF/dt = -500 A/µs, Tj = 125 °C
Reverse recovery charge
-
0.2
-
Qrr
µC
IF = 50 A, VR = -300 V, VGE = 0 V
diF/dt = -500 A/µs
Tj = 25 °C
-
2.8
-
Tj = 125 °C
-
5
-
Semiconductor Group
3
Jan-10-1997
BSM50GD60DN2E3226
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 3
220
W
Ptot
A
180
IC
tp = 16.0µs
10 2
160
140
100 µs
120
10
1
100
1 ms
80
60
10 0
10 ms
40
DC
20
0
0
20
40
60
80
100
120
°C
10 -1
0
10
160
10
1
10
2
V 10
TC
3
VCE
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 0
50
A
K/W
IC
40
ZthJC
35
10 -1
30
25
D = 0.50
0.20
20
10
-2
0.10
15
0.05
0.02
10
0.01
single pulse
5
0
0
20
40
60
80
100
120
°C
160
TC
Semiconductor Group
10 -3
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
4
Jan-10-1997
BSM50GD60DN2E3226
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
parameter: tp = 80 µs, Tj = 125 °C
IC
100
100
A
A
80
70
17V
15V
13V
11V
9V
7V
IC
80
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0
1
2
3
V
0
0
5
VCE
17V
15V
13V
11V
9V
7V
1
2
3
V
5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
100
A
IC
80
70
60
50
40
30
20
10
0
0
2
4
Semiconductor Group
6
8
10
V
14
VGE
5
Jan-10-1997
BSM50GD60DN2E3226
Typ. capacitances
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 50 A
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 1
20
V
nF
VGE
16
Ciss
C
100 V
14
300 V
10 0
12
10
Coss
Crss
8
10 -1
6
4
2
0
0
20
40
60
80
100
120
10 -2
0
160
5
10
15
20
25
30
QGate
V
40
VCE
Reverse biased safe operating area
Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150°C
parameter: VGE = 15 V
ICsc = f(VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH
2.5
12
ICpuls/IC
ICsc/IC
8
1.5
6
1.0
4
0.5
2
0.0
0
0
100
200
Semiconductor Group
300
400
500
600
V
800
VCE
6
0
100
200
300
400
500
600
V
800
VCE
Jan-10-1997
BSM50GD60DN2E3226
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 22 Ω
par.: VCE = 300 V, VGE = ± 15 V, IC = 50 A
10 3
10 3
tdoff
tf
t
tf
t
ns
ns
tdoff
tr
tdon
tr
10 2
10 2
tdon
10 1
0
20
40
60
80
100
A
IC
10 1
0
140
20
40
60
80
Ω
120
RG
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 22 Ω
par.: VCE = 300V, VGE = ± 15 V, IC = 50 A
10
10
Eoff
mWs
E
mWs
8
E
8
7
7
6
6
Eoff
Eon
5
5
4
4
3
3
2
2
1
1
0
0
20
40
Semiconductor Group
60
80
100
A
IC
140
7
0
0
Eon
20
40
60
80
Ω
120
RG
Jan-10-1997
BSM50GD60DN2E3226
Forward characteristics of fast recovery
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
reverse diode IF = f(VF)
parameter: Tj
10 1
100
A
IF
Diode
K/W
80
ZthJC
10 0
70
60
10 -1
50
D = 0.50
0.20
40
Tj=125°C
0.10
Tj=25°C
30
0.05
10 -2
20
0.02
single pulse
0.01
10
0
0.0
0.5
1.0
1.5
2.0
V
3.0
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
VF
Semiconductor Group
10 -3
-5
10
8
Jan-10-1997
BSM50GD60DN2E3226
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 180 g
Semiconductor Group
9
Jan-10-1997
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