AP6A100M
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D2
D2
▼ Small Package Outline
D1
D1
▼ Surface Mount Device
G2
▼ RoHS Compliant & Halogen-Free
SO-8
BVDSS
60V
RDS(ON)
100mΩ
3
ID
3.3A
S2
G1
S1
Description
D2
D1
AP6A100 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
G2
G1
S2
S1
The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
.
Rating
Units
60
V
+20
V
3
3.3
A
3
2.7
A
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
1
IDM
Pulsed Drain Current
20
A
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
201611221
AP6A100M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
60
-
-
V
VGS=10V, ID=3A
-
-
100
mΩ
VGS=4.5V, ID=2A
-
-
125
mΩ
V
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
gfs
Forward Transconductance
VDS=5V, ID=3A
-
9
-
S
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=3A
-
10
16
nC
Qgs
Gate-Source Charge
VDS=48V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
2
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
5
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
15
-
ns
tf
Fall Time
VGS=10V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
420
672
pF
Coss
Output Capacitance
VDS=30V
-
35
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
25
-
pF
Min.
Typ.
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.2A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=3A, VGS=0V,
-
11
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
6
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6A100M
20
12
16
10V
7.0V
6.0V
5.0V
V G = 4.0V
10
ID , Drain Current (A)
T A = 25 C
ID , Drain Current (A)
o
T A = 150 C
10V
7.0V
6.0V
5.0V
V G = 4.0V
o
12
8
8
6
4
4
2
0
0
0
1
2
3
4
5
0
V DS , Drain-to-Source Voltage (V)
2
4
6
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2.8
I D =2A
T A =25 o C
ID=3A
V G =10V
2.4
72
.
68
Normalized RDS(ON)
RDS(ON) (mΩ)
76
2.0
1.6
1.2
64
0.8
0.4
60
2
4
6
8
-100
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
10
I D =1mA
8
1.6
IS(A)
Normalized VGS(th)
T j =25 o C
o
T j =150 C
6
4
2
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6A100M
f=1.0MHz
800
ID=3A
V DS =48V
10
600
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C iss
400
4
200
2
C oss
C rss
0
0
0
2
4
6
8
10
12
1
21
Q G , Total Gate Charge (nC)
41
61
81
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
ID (A)
Operation in this
area limited by
RDS(ON)
1
100us
1ms
10ms
100ms
0.1
0.01
1s
DC
o
T A =25 C
Single Pulse
0.001
.
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja =135℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
16
VG
V DS =5V
QG
ID , Drain Current (A)
12
10V
QGS
8
QGD
T j =150 o C
T j =25 o C
4
o
T j = -55 C
Charge
Q
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP6A100M
2
2.4
I D =1mA
2
PD, Power Dissipation(W)
Normalized BVDSS
1.6
1.2
0.8
1.6
1.2
0.8
0.4
0.4
0
0
-100
-50
0
T
j
50
100
0
150
, Junction Temperature ( o C)
50
100
150
o
T A , Ambient Temperature( C)
Fig 13. Normalized BVDSS v.s. Junction
Fig 14. Total Power Dissipation
Temperature
500
T j =25 o C
RDS(ON) (mΩ)
400
300
.
200
4.5V
V GS =10V
100
0
0
3
6
9
12
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
AP6A100M
MARKING INFORMATION
Part Number
6A100
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6