DMNH4011SK3Q Green 40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits NEW PRODUCT ADVANCED INFORMATION BVDSS RDS(ON) Max ID TC = +25°C 40V 10mΩ @ VGS = 10V 50A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Rated to +175C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – ensures more reliable and robust end application Low On-Resistance Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data DC-DC Converters Power Management Functions Case: TO252 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) D D TO252 G D G S Top View Pin Out Top View S Internal Schematic Ordering Information (Note 5) Part Number DMNH4011SK3Q-13 Notes: Case TO252 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Please refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information H4011S YYWW DMNH4011SK3Q Document number: DS38163 Rev. 1 - 2 =Manufacturer’s Marking H4011S = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 15 = 2015) WW = Week Code (01 to 53) 1 of 7 www.diodes.com December 2015 © Diodes Incorporated DMNH4011SK3Q Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT ADVANCED INFORMATION TC = +25°C TC = +100°C Steady State Continuous Drain Current (Note 7) ID Maximum Body Diode Forward Current (Note 7) Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%) Avalanche Current, L=0.1mH Avalanche Energy, L=0.1mH IS IDM IAS EAS Value 40 ±20 50 27 40 120 45 100 Unit V V Value 2.6 47 50 3 -55 to +175 Unit W °C/W W °C/W °C A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Symbol PD RJA PD RJC TJ, TSTG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 40 1 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD 2 8.5 0.9 4 10 1.2 V mΩ V VDS = VGS, ID = 250µA VGS = 10V, ID = 50A VGS = 0V, IS = 20A Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR 1,405 247 108 2.2 25.5 4.6 6.9 4.6 3.7 16 5.1 22.1 13.4 pF VDS = 20V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 20V, VGS = 10V , ID = 50A ns VDD = 20V, VGS = 10V, ID = 50A, Rg = 3.5Ω ns nC IF = 50A, di/dt = 100A/μs 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMNH4011SK3Q Document number: DS38163 Rev. 1 - 2 2 of 7 www.diodes.com December 2015 © Diodes Incorporated DMNH4011SK3Q 50.0 30 40.0 VGS=6.0V VGS=4.0V VGS=10.0V 30.0 20.0 VGS=3.5V 10.0 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS=5V VGS=5.0V 20 15 175℃ 10 85℃ 150℃ 25℃ 5 125℃ VGS=3.0V -55℃ 0.0 0 0 0.5 1 1.5 2 2.5 3 1.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (MΩ) 10.00 9.50 9.00 VGS=10.0V 8.50 8.00 7.50 7.00 6.50 6.00 ID=50A 17 14 0.02 150℃ 125℃ 175℃ 0.016 0.014 85℃ 0.012 0.01 25℃ 0.008 0.006 -55℃ 0.004 0.002 0 0 5 10 15 20 25 30 35 40 45 50 8 5 2 Document number: DS38163 Rev. 1 - 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 2.2 2 1.8 1.6 1.4 VGS=10V, ID=50A 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMNH4011SK3Q ID=20A 11 10 15 20 25 30 35 40 45 50 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage VGS=10V 4.5 20 5 0.018 2 2.5 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (MΩ) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT ADVANCED INFORMATION VGS=4.5V 3 of 7 www.diodes.com December 2015 © Diodes Incorporated 0.016 0.014 VGS=10V, ID=50A 0.012 3 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.02 0.018 0.01 0.008 0.006 0.004 0.002 0 2.8 2.6 2.4 2.2 ID=1mA 2 ID=250µA 1.8 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs Temperature 50 CT, JUNCTION CAPACITANCE (pF) 10000 43 IS, SOURCE CURRENT (A) 36 VGS=0V, TA=175℃ 29 22 VGS=0V, TA=85℃ VGS=0V, TA=150℃ VGS=0V, TA=25℃ 15 VGS=0V, TA=125℃ 8 VGS=0V, TA=-55℃ 1 0 f=1MHz Ciss 1000 Coss 100 Crss 10 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 40 1000 10 RDS(ON) Limited ID, DRAIN CURRENT (A) 8 6 VGS (V) NEW PRODUCT ADVANCED INFORMATION DMNH4011SK3Q 4 VDS=20V, ID=50A 2 0 PW =10µs 100 PW =1s PW =100ms 10 PW =10ms PW =1ms 1 0.1 TJ(Max)=175°C TC=25°C Single Pulse DUT on infinite heatsink VGS=10V PW =100µs PW =1µs 0.01 0 3 6 9 12 15 18 21 Qg (nC) Figure 11. Gate Charge DMNH4011SK3Q Document number: DS38163 Rev. 1 - 2 24 27 4 of 7 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 December 2015 © Diodes Incorporated DMNH4011SK3Q r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT ADVANCED INFORMATION 1 D=0.9 D=0.3 D=0.7 0.1 D=0.5 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC(t)=r(t) * RθJC RθJC=3.03°C/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMNH4011SK3Q Document number: DS38163 Rev. 1 - 2 5 of 7 www.diodes.com December 2015 © Diodes Incorporated DMNH4011SK3Q Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. NEW PRODUCT ADVANCED INFORMATION TO252 (DPAK) E A b3 7° ± 1° c L3 D A2 L4 e H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a L A1 2.74REF TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. TO252 (DPAK) X1 Y1 Dimensions C X X1 Y Y1 Y2 Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X DMNH4011SK3Q Document number: DS38163 Rev. 1 - 2 6 of 7 www.diodes.com December 2015 © Diodes Incorporated DMNH4011SK3Q IMPORTANT NOTICE NEW PRODUCT ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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