DMN60H3D5SK3 Green 600V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT ADVANCED INFORMATION Product Summary Features BVDSS RDS(ON) Max 600V 3.5 @ VGS = 10V ID TC = +25°C 2.8A Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. Mechanical Data Applications Motor Control Backlighting DC-DC Converters Power Management Functions Case: TO252 (DPAK) (Type TH) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) D TO252 (DPAK) (Type TH) D G Top View S Top View Pin Out Internal Schematic Ordering Information (Note 4) Part Number DMN60H3D5SK3-13 Notes: Case TO252 (DPAK) (Type TH) Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 60H3D5S YYWW DMN60H3D5SK3 Document number: DS37884 Rev. 2 - 2 =Manufacturer’s Marking 60H3D5S = Product Type Marking Code YYWW = Date Code Marking YY or YY = Last Two Digits of Year (ex: 17 = 2017) WW or WW = Week Code (01 to 53) 1 of 7 www.diodes.com January 2017 © Diodes Incorporated DMN60H3D5SK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT ADVANCED INFORMATION Continuous Drain Current (Note 5) VGS = 10V TC = +25°C TC = +100°C Steady State Value 600 ±30 2.8 1.8 2.5 4.4 1.0 30 2.7 ID Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Avalanche Current, L = 60mH (Note 7) Avalanche Energy, L = 60mH (Note 7) IS IDM IAS EAS dv/dt Peak Diode Recovery dv/dt (VDD = 400V, ID = 2.7A) Unit V V A A A A mJ V/ns Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TC = +25°C TC = +100°C Total Power Dissipation (Note 5) PD Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range RJA RJC TJ, TSTG Value 41 16 46 3.0 -55 to +150 Unit W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 600 1.0 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = ±30V, VDS = 0V VGS(TH) RDS(ON) VSD 2.0 3.1 2.7 0.9 4.0 3.5 1.5 V V VDS = VGS, ID = 250µA VGS = 10V, ID = 1.5A VGS = 0V, IS = 3.0A Ciss Coss Crss RG Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR 354 41 4 2.6 12.6 1.7 7.1 10.6 22 34 28 198 952 pF VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 480V, ID = 2.5A ns VGS = 10V , VDD = 300V, RG = 25, ID = 2.5A ns nC VGS = 0V, IS = 2.5A, dI/dt = 100A/μs 5. Device mounted on infinite heatsink. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect. DMN60H3D5SK3 Document number: DS37884 Rev. 2 - 2 2 of 7 www.diodes.com January 2017 © Diodes Incorporated DMN60H3D5SK3 5.0 1 VDS=10V VGS=20.0V 0.8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 4.0 VGS=10.0V 3.0 VGS=4.5V VGS=6.0V 2.0 VGS=8.0V 1.0 0.6 0.4 0.2 25℃ 150℃ 0.0 -55℃ 0 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) 30 2 Figure 1. Typical Output Characteristic 4 3.5 3 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) 5 Figure 2. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 85℃ 125℃ VGS=4.0V VGS=10V 2.5 2 1.5 10 8 6 ID=1.5A 4 2 0 0 0.5 1 1.5 2 2.5 3 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 5 10 15 20 25 30 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 3 9 VGS=10V 8 150℃ 125℃ 7 85℃ 6 5 4 25℃ 3 2 -55℃ 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT ADVANCED INFORMATION VGS=5.0V 0 0 0.5 1 1.5 2 2.5 3 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMN60H3D5SK3 Document number: DS37884 Rev. 2 - 2 3 of 7 www.diodes.com 2.5 2 VGS=10V, ID=4A 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature January 2017 © Diodes Incorporated DMN60H3D5SK3 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 3.8 7 6 5 4 VGS=10V, ID=1.5A 3 2 1 0 3.6 3.4 ID=1mA 3.2 3 2.8 ID=250μA 2.6 2.4 2.2 2 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 150 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Temperature Figure 7. On-Resistance Variation with Temperature 3 1000 IS, SOURCE CURRENT (A) 2.5 VGS=0V, TA=125℃ 2 VGS=0V, TA=150℃ 1.5 VGS=0V, TA=85℃ 1 VGS=0V, TA=25℃ 0.5 VGS=0V, TA=-55℃ CT, JUNCTION CAPACITANCE (pF) f=1MHz 0 Ciss 100 Coss 10 Crss 1 0 0.3 0.6 0.9 1.2 1.5 0 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 10 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 10 40 PW =10μs RDS(ON) Limited ID, DRAIN CURRENT (A) 8 VDS=480V, ID=2.5A 6 VGS (V) NEW PRODUCT ADVANCED INFORMATION 8 4 PW =1μs 1 PW =100μs PW =1ms PW =10ms 0.1 TJ(MAX)=150℃ TA=25℃ Single Pulse DUT on infinite heatsink VGS=10V 2 0 0.01 0 2 4 6 8 10 Qg (nC) Figure 11. Gate Charge DMN60H3D5SK3 Document number: DS37884 Rev. 2 - 2 12 14 1 PW =100ms DC 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 1000 Figure 12. SOA, Safe Operation Area 4 of 7 www.diodes.com January 2017 © Diodes Incorporated DMN60H3D5SK3 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT ADVANCED INFORMATION 1 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC (t)=r(t) * RθJC RθJC=2.79℃ /W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMN60H3D5SK3 Document number: DS37884 Rev. 2 - 2 5 of 7 www.diodes.com January 2017 © Diodes Incorporated DMN60H3D5SK3 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) (Type TH) A b3 7° ± 2° L5 Ø c A4 D 1. L4 0 20 NEW PRODUCT ADVANCED INFORMATION E L3 H A2 7° ± 2° e b(3x) Gauge Plane E1 7° ± 2° L2 D1 Seating Plane a L A1 2.90REF TO252 (DPAK) (Type TH) Dim Min Max Typ A 2.20 2.38 2.30 A1 0.00 0.10 A2 0.97 1.17 1.07 A4 0.10 REF b 0.72 0.85 0.78 b3 5.23 5.45 5.33 c 0.47 0.58 0.53 D 6.00 6.20 6.10 D1 5.30 REF e 2.286 BSC E 6.50 6.70 6.60 E1 4.70 4.92 4.83 H 9.90 10.10 10.30 L 1.40 1.70 1.60 L2 0.51 BSC L3 0.90 1.25 L4 0.60 1.00 0.80 L5 1.70 1.90 1.80 a 0° 8° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) (Type TH) X1 Dimensions C X X1 Y Y1 Y2 Y1 Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X DMN60H3D5SK3 Document number: DS37884 Rev. 2 - 2 6 of 7 www.diodes.com January 2017 © Diodes Incorporated DMN60H3D5SK3 IMPORTANT NOTICE NEW PRODUCT ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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