Single P-channel MOSFET ELM53401CA-S ■General description ■Features ELM53401CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-20V Id=-1.8A Rds(on) < 520mΩ (Vgs=-4.5V) Rds(on) < 870mΩ (Vgs=-2.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Symbol Drain-source voltage Vds -20 V Gate-source voltage Vgs ±12 -1.8 V Ta=25°C Continuous drain current Id Ta=70°C Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range A -1.2 -6 1.25 A W 0.80 -55 to 150 Tj, Tstg °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Steady-state Rθja ■Pin configuration Typ. Max. Unit 120 °C/W ■Circuit SOT-23(TOP VIEW) 3 1 2 D Pin No. 1 2 Pin name GATE SOURCE 3 DRAIN G S 5-1 Single P-channel MOSFET ELM53401CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Vgs=0V, Id=-250μA Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-20V, Vgs=0V, Ta=85°C -5 Vds=0V, Vgs=±12V Static drain-source on-resistance Rds(on) Max. body-diode continuous current DYNAMIC PARAMETERS Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Crss Turn-on rise time Turn-off delay time Turn-off fall time -0.4 -0.7 Qg Qgs Qgd μA ±100 nA -1.0 V A Vgs=-4.5V, Id=-1.8A 420 520 mΩ Vgs=-2.5V, Id=-1.5A 770 870 mΩ Vds=-10V, Id=-0.4A Is=-0.15A, Vgs=0V 1 -0.65 -1.20 S V -1 A 100 pF pF Is Input capacitance Output capacitance Gate-source charge Gate-drain charge Turn-on delay time V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Gfs Vsd -20 Vds=-20V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Vgs=0V, Vds=-10V, f=1MHz 70 20 10 Vgs=-4.5V, Vds=-10V Id=-0.25A td(on) Vgs=-4.5V, Vds=-10V tr RL=30Ω, Id=-0.2A td(off) Rgen=10Ω tf 5-2 pF 1.0 0.1 0.3 1.3 nC nC nC 10 10 15 15 ns ns 40 60 ns 30 50 ns AFP2307A Alfa-MOS 20V P-Channel Single P-channel MOSFET Technology Enhancement Mode MOSFET ELM53401CA-S ■Typical electrical and thermal characteristics Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Nov. 2011 www.alfa-mos.com 5-3 Page 3 AFP2307A Alfa-MOS 20V P-Channel Technology Single P-channel MOSFET Enhancement Mode MOSFET ELM53401CA-S Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Nov. 2011 www.alfa-mos.com 5-4 Page 4 Alfa-MOS Single P-channel MOSFET Technology AFP2307A 20V P-Channel ELM53401CA-S Enhancement Mode MOSFET ■Test circuit and waveform Package Information ( SOT-23 ) ©Alfa-MOS Technology Corp. Rev.A Nov. 2011 5-5 www.alfa-mos.com Page 5