DMT68M8LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V Features and Benefits RDS(ON) Max ID Max TA = +25°C 8.5mΩ @ VGS = 10V 12.1A 12mΩ @ VGS = 4.5V 10.2A High Conversion Efficiency Low RDS(ON) – Minimizes On-State Losses Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. High Frequency Switching Synchronous Rectification DC-DC Converters Mechanical Data Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) SO-8 ESD PROTECTED S D S D S D G D D G Gate Protection Diode Top View Internal Schematic Top View S Equivalent Circuit Ordering Information (Note 4) Part Number DMT68M8LSS-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information 8 5 = Manufacturer’s Marking T68M8LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 17 = 2017) WW = Week (01 to 53) T68M8LS YY WW 1 DMT68M8LSS Document number: DS39396 Rev. 2 - 2 4 1 of 7 www.diodes.com May 2017 © Diodes Incorporated DMT68M8LSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C TC = +25°C TC = +70°C Value 60 ±20 12.1 9.7 ID A 28.9 9.7 100 20 100 19 54.2 ID Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current, L = 0.3mH Avalanche Energy, L = 0.3mH Unit V V IDM IS ISM IAS EAS A A A A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Symbol PD RJA PD RθJA RθJC TJ, TSTG Value 1.3 93 1.9 67 11.7 -55 to +150 Unit W °C/W W °C/W °C/W °C Electrical Characteristics (TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 — — — — — — 1 ±10 V μA μA VGS = 0V, ID = 1mA VDS = 48V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD — 6.7 8.9 0.9 3 8.5 12 1.2 V Static Drain-Source On-Resistance 1 — — — VDS = VGS, ID = 250μA VGS = 10V, ID = 13.5A VGS = 4.5V, ID = 11.5A VGS = 0V, IS = 20A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR — — — — — — — — — — — — — 2107 634 48 1.8 31.8 15.6 3.4 6.6 4.6 7.9 25.2 13.9 19.3 — — — — — — — — — — — — — QRR — 38.1 — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 30V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 30V, ID = 20A ns VDD = 30V, VGS = 10V, ID = 20A, Rg = 3.3Ω ns nC IF = 15A, di/dt = 500A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMT68M8LSS Document number: DS39396 Rev. 2 - 2 2 of 7 www.diodes.com May 2017 © Diodes Incorporated DMT68M8LSS 30.0 30 VGS = 3.0V VGS = 3.5V VGS =4.5V VGS = 10.0V 20.0 VDS = 5V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 VGS=2.8V 15.0 10.0 VGS = 2.6V VGS = 2.4V 5.0 20 15 TJ=125℃ 10 TJ=85℃ TJ=150℃ 5 VGS = 2.2V TJ=-55℃ 0.0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 5 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0.01 VGS = 4.5V 0.009 0.008 0.007 VGS = 10V 0.006 1.5 2 2.5 3 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 3.5 0.04 0.035 ID = 13.5A 0.03 ID = 11.5A 0.025 0.02 0.015 0.01 0.005 0.005 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) 30 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.014 VGS = 10V 0.012 TJ=150℃ 0.01 TJ=125℃ 0.008 TJ=85℃ 0.006 TJ=25℃ 0.004 TJ=-55℃ 0.002 0 5 10 15 20 ID, DRAIN CURRENT (A) 25 30 Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMT68M8LSS Document number: DS39396 Rev. 2 - 2 4 8 12 16 VGS, GATE-SOURCE VOLTAGE (V) 20 Figure 4. Typical Transfer Characteristic Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) TJ=25℃ 3 of 7 www.diodes.com 1.8 1.6 VGS = 10V, ID = 13.5A 1.4 1.2 VGS = 4.5V, ID = 11.5A 1 0.8 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 150 Figure 6. On-Resistance Variation with Junction Temperature May 2017 © Diodes Incorporated 0.02 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMT68M8LSS 0.015 VGS = 4.5V, ID = 11.5A 0.01 0.005 VGS = 10V, ID = 13.5A 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 2 1.8 ID = 1mA 1.6 1.4 ID = 250μA 1.2 1 0.8 0.6 -50 150 Figure 7. On-Resistance Variation with Junction Temperature 30 10000 20 15 TJ= 85oC 10 TJ = 125oC TJ = 25oC 5 TJ = f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 25 IS, SOURCE CURRENT (A) -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 150oC Ciss 1000 Coss 100 Crss 10 TJ = -55oC 0 1 0 0.3 0.6 0.9 1.2 1.5 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (V) VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance 100 10 RDS(ON) Limited ID, DRAIN CURRENT (A) 8 VGS (V) 60 6 4 VDS = 30V, ID = 20A 10 PW =1ms 1 0.1 0.01 0 5 10 15 20 Qg (nC) 25 30 35 Document number: DS39396 Rev. 2 - 2 TJ(Max) = 150℃ TC = 25℃ Single Pulse DUT on 1*MRP Board VGS= 10V 0.01 PW =10s DC 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 12. SOA, Safe Operation Area Figure 11. Gate Charge DMT68M8LSS PW =10ms PW =100ms PW =1s 2 0 PW =100µs 4 of 7 www.diodes.com May 2017 © Diodes Incorporated DMT68M8LSS r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 D=0.01 0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA = 98℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMT68M8LSS Document number: DS39396 Rev. 2 - 2 5 of 7 www.diodes.com May 2017 © Diodes Incorporated DMT68M8LSS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 E 1 b E1 h ) ides All s 9° ( R 0 e c 4° ± 3° A .1 Q 45° 7° A1 L E0 Gauge Plane Seating Plane SO-8 Dim Min Max Typ A 1.40 1.50 1.45 A1 0.10 0.20 0.15 b 0.30 0.50 0.40 c 0.15 0.25 0.20 D 4.85 4.95 4.90 E 5.90 6.10 6.00 E1 3.80 3.90 3.85 E0 3.85 3.95 3.90 e --1.27 h -0.35 L 0.62 0.82 0.72 Q 0.60 0.70 0.65 All Dimensions in mm D Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X1 Dimensions Value (in mm) C 1.27 X 0.802 X1 4.612 Y 1.505 Y1 6.50 Y1 Y C DMT68M8LSS Document number: DS39396 Rev. 2 - 2 X 6 of 7 www.diodes.com May 2017 © Diodes Incorporated DMT68M8LSS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2017, Diodes Incorporated www.diodes.com DMT68M8LSS Document number: DS39396 Rev. 2 - 2 7 of 7 www.diodes.com May 2017 © Diodes Incorporated