SMD ESD Protection Diode CPDVR5V0-HF RoHS Device Halogen Free WBFBP-02C-C Features - IEC61000-4-2 Level 4 ESD Protection. 0.026(0.65) 0.022(0.55) - Bi-directional ESD protection of one line. - JESD22-A114-B ESD Rating of class 3B - per human body model. 0.041(1.05) 0.037(0.95) 0.004(0.09) 0.000(0.01) - Fast response time. - Low leakage current. 0.022(0.55) 0.018(0.45) - Low reverse clamping voltage. Mechanical data 0.015(0.39) REF. - Case: WBFBP-02C-C Plastic-Encapsulate Diodes 0.002(0.05) REF. - Terminals: Tin plated, solderable per MIL-STD-750,method 2026. 0.015(0.37) 0.011(0.27) 0.017(0.42) REF. 0.020(0.50) 0.016(0.40) - Marking code: Y - Mounting position: Any. 0.002(0.05) REF. 0.014(0.36) REF. 0.027(0.68) 0.023(0.58) Circuit Diagram Dimensions in inches and (millimeter) Maximum Ratings (at TA=25°C unless otherwise noted) Symbol Parameter Air Model Limit Unit ±25 IEC 61000-4-2 ESD Voltage Contact Model (1) ±25 VESD kV JESD22-A114-B ESD Voltage Per Human Body Model ±16 ESD Voltage Machine Model ±0.4 (2) Peak Pulse Power PPP Peak Pulse Current IPP Lead Solder Temperature - Maximum (10 Second Duration) Junction temperature Storage temperature rang 40 W 4 A TL 260 °C TJ 150 °C TSTG -55 to +150 °C (2) Notes: (1) Device stressed with ten non-repetitive ESD pulses. (2) Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5. Company reserves the right to improve product design , functions and reliability without notice. REV: C Page 1 QW-JP042 Comchip Technology CO., LTD. SMD ESD Protection Diode Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Min Typ Max Unit - - 5 V IR - - 0.1 μA 5.8 - 8.0 V - - 10 V - 12 15 pF Symbol Conditions Reverse stand-off voltage VRWM Reverse leakage current VRWM = 5 V Breakdown voltage IT = 1 mA V(BR) Clamping voltage IPP = 4 A VC Junction capacitance VR = 0V , f = 1MHz CJ (1) (2) Notes: (1) Other voltages available upon request. (2) Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5. RATING AND CHARACTERISTIC CURVES (CPDVR5V0-HF) Fig.1 - Reverse Characteristics Fig.2 - Capacitance Characteristics 15 Pulsed TA=100°C Reverse Current, (mA) 75 50 TA=25°C 25 0 -25 -50 -75 Capacitance Between Terminals, (pF) 100 TA=25°C f=1MHz 12 9 6 3 0 -100 -8 -6 -4 -2 0 2 4 6 8 Reverse Voltage, (V) 0 1 2 3 4 5 6 Reverse Voltage, (V) Fig.3 - VC — IPP 8.0 Clamping Voltage, (V) TA=25°C tp=8/20μs 7.5 7.0 6.5 6.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Reverse Peak Pulse Current, (A) Company reserves the right to improve product design , functions and reliability without notice. REV: C Page 2 QW-JP042 Comchip Technology CO., LTD. SMD ESD Protection Diode Reel Taping Specification d P0 P1 E Index hole F W B C A P D1 D2 D W1 Trailer Device ....... ....... End ....... ....... Leader ....... ....... ....... ....... 10 pitches (min) Start 10 pitches (min) Direction of Feed WBFBP -02C-C WBFBP -02C-C SYMBOL A B C d D D1 D2 (mm) 0.66 ± 0.05 1.15 ± 0.05 0.66 ± 0.05 1.50 + 0.10 178.00 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.026 ± 0.002 0.045 ± 0.002 0.026 ± 0.002 0.059 + 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 2.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 9.50 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.079 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.374 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV: C Page 3 QW-JP042 Comchip Technology CO., LTD. SMD ESD Protection Diode Marking Code Part Number Marking Code CPDVR5V0-HF Y Y Suggested PAD Layout WBFBP-02C-C D SIZE (mm) (inch) A 0.55 0.022 B 0.52 0.020 C 0.15 0.006 D 0.63 0.025 E 1.00*0.60 PKG. E C A C B Standard Packaging REEL PACK Case Type WBFBP-02C-C REEL Reel Size ( pcs ) (inch) 10,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV: C Page 4 QW-JP042 Comchip Technology CO., LTD.