Microsemi APT30DL60B Ultrasoft recovery rectifi er diode Datasheet

APT30DL60B(G)
APT30DL60S(G)
600V 30A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Ultrasoft Recovery Rectifier Diode
(B)
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Ultrasoft Recovery Times (trr)
• Soft Switching - High Qrr
• Popular TO-247 Package or
Surface Mount D3PAK Package
• Low Noise Switching
- Reduced Ringing
• Ultra Low Forward Voltage
• Higher Reliability Systems
• Low Leakage Current
• Minimizes or eliminates
snubber
• Applications
- Induction Heating
• Resonant Mode Circuits
-ZVS and ZCS Topologies
- Phase Shifted Bridge
TO
- 24
7
D3PAK
1
2
1
2
(S)
2
1
1 - Cathode
2 - Anode
Back of Case - Cathode
All Ratings : TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VR
Characteristic / Test Conditions
Ratings
Unit
600
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward current (TC = 126°C, Duty Cycle = 0.5)
30
IF(RMS)
RMS Forward Currrent (Square wave, 50% duty)
51
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)
110
IFSM
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
Amps
-55 to 175
°C
Lead Temperature for 10 Seconds
300
STATIC ELECTRICAL CHARACTERISTICS
VF
Characteristic / Test Conditions
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
Min
Typ
Max
IF = 30A
1.25
1.6
IF = 60A
2.03
IF = 30A, TJ = 125°C
1.9
Volts
VR = 600V
25
VR = 600V, TJ = 125°C
250
μA
31
Microsemi Website - http://www.microsemi.com
Unit
pF
052-6313 Rev B 6 - 2009
Symbol
APT30DL60B_S(G)
DYNAMIC CHARACTERISTICS
Symbol
Characteristic / Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
trr
Min
Typ
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
Unit
64
ns
317
IF = 30A, diF/dt = -200A/μs
VR = 400V, TC = 25°C
Reverse Recovery Time
Qrr
Max
IF = 30A, diF/dt = -200A/μs
VR = 400V, TC = 125°C
IF = 30A, diF/dt = -1000A/μs
VR = 400V, TC = 125°C
962
nC
7
Amps
561
ns
2244
nC
9
Amps
264
ns
3191
nC
26
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
RθJC
Junction-to-Case Thermal Resistance
WT
Min
Typ
Unit
.88
°C/W
0.22
oz
5.9
g
Package Weight
Torque
0.9
0.8
0.7
0.6
0.5
0.4
Note:
0.3
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
10
lb·in
1.1
N·m
Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.2
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
052-6313 Rev B 6 - 2009
Max
APT30DL60B_S(G)
TYPICAL PERFORMANCE CURVES
800
100
TJ= 125°C
TJ= 150°C
60
TJ= 25°C
50
40
30
20
10
0
Qrr, REVERSE RECOVERY CHARGE
(nC)
TJ= 55°C
70
0
0.5
1.0
1.5
2.0
2.5 3.0
VF, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
4500
T = 125°C
60A
J
V = 400V
R
4000
3500
30A
3000
2500
15A
2000
1500
1000
500
0
15A
400
300
200
100
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
32
T = 125°C
J
V = 400V
28
60A
R
30A
24
15A
20
16
12
8
4
0
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
70
60
1
IRRM
0.8
50
tRR
0.6
QRR
0.4
40
30
20
0.2
0
30A
500
0
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
1.2
R
60A
600
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT (A)
80
T = 125°C
J
V = 400V
700
trr, COLLECTOR CURRENT (A)
90
10
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, Dynamic Parameters vs Junction Temperature
0
Duty cycle = 0.5
TJ = 126°C
25
50
75
100
125
150
175
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
250
200
150
100
50
0
1
10
100
400
VR, REVERSE VOLTAGE (V)
FIGURE 8, Junction Capacitance vs. Reverse Voltage
052-6313 Rev B 6 - 2009
CJ, JUNCTION CAPACITANCE (pF)
300
APT30DL60B_S(G)
Vr
diF /dt Adjust
+18V
0V
D.U.T.
trr/Qrr
Waveform
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
1
4
6
Zero
5
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
0.25 IRRM
3
Slope = diM/dt
2
Figure 10, Diode Reverse Recovery Waveform and Definitions
3
D PAK Package Outline
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
15.49 (.610)
16.26 (.640)
Cathode
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
4.90 (.193)
5.10 (.201)
1.45 (.057)
1.60 (.063)
15.85 (.624)
16.05(.632)
1.00 (.039)
1.15(.045)
20.80 (.819)
21.46 (.845)
0.40 (.016)
0.65 (.026)
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.250 (.010)
2.70 (.106)
2.90 (.114)
1.15 (.045)
1.45 (.057)
1.20 (.047)
1.90 (.075) 1.40 (.055)
2.10 (.083)
5.45 (.215) BSC
(2 Plcs.)
Anode
2.21 (.087)
2.59 (.102)
Cathode
10.90 (.430) BSC
Dimensions in Millimeters and (Inches)
13.30 (.524)
13.60(.535)
12.40 (.488)
12.70 (.500)
18.70 (.736)
19.10 (.752)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
052-6313 Rev B 6 - 2009
Cathode
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
e1 100% Sn
2.40 (.094)
2.70 (.106)
(Base of Lead)
Heat Sink (Cathode)
and Leads
are Plated
Anode
Cathode
Dimensions in Millimeters (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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